Applying Variable-Switching-Frequency Variable-Phase-Shift Control and E-Mode GaN HEMTs to an Indirect Matrix Converter-Based EV Battery Charger
العنوان: | Applying Variable-Switching-Frequency Variable-Phase-Shift Control and E-Mode GaN HEMTs to an Indirect Matrix Converter-Based EV Battery Charger |
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المؤلفون: | Guanliang Liu, Hua Bai, Alan Brown, Philip Michael Johnson, Allan Taylor, Matt McAmmond, Juncheng Lu |
المصدر: | IEEE Transactions on Transportation Electrification. 3:554-564 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2017. |
سنة النشر: | 2017 |
مصطلحات موضوعية: | 010302 applied physics, Engineering, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Energy Engineering and Power Technology, Transportation, 02 engineering and technology, Power factor, 01 natural sciences, law.invention, Constant power circuit, Battery charger, Parasitic capacitance, law, 0103 physical sciences, Automotive Engineering, 0202 electrical engineering, electronic engineering, information engineering, Voltage regulation, Electrical and Electronic Engineering, Transformer, business, Power density, Voltage |
الوصف: | An indirect matrix converter is employed directly converting the grid ac to the battery voltage, with the dual-active-bridge taking care of the power factor correction and power delivery simultaneously. Such circuit is regarded as one candidate of the high-efficiency and high-power-density electric vehicle on-board chargers, if the double-frequency current ripple to the battery is tolerated. Instead of optimizing the overall charger, this paper is focused on adopting variable switching frequency with multiple phase shifts to accommodate the wide input range (80–260 $V_{\mathrm{ ac}}$ ) and output range (200 V–450 $V_{\mathrm{ dc}}$ ). In addition to the phase shift between the transformer primary-side and secondary-side voltage, one extra phase shift is added to the primary-side H-bridge when the instantaneous input voltage is higher than the reflected output, otherwise, to the secondary side. The goal is to secure zero-voltage-switching for all switches at all voltage range. Such control strategy is further optimized incorporating with the switch parasitic capacitance and dead-band settings. To further enhance the charger performance, GaN HEMTs are equipped to the on-board charger aiming at higher efficiency and higher power density than Si devices. Experimental results indicated that such charger with proposed control strategy embraces the peak efficiency of >97% at 7.2 kW and a power density of ~4 kW/L. |
تدمد: | 2332-7782 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::7660009f964b39bd4774508ea63dc831Test https://doi.org/10.1109/tte.2017.2723944Test |
حقوق: | CLOSED |
رقم الانضمام: | edsair.doi...........7660009f964b39bd4774508ea63dc831 |
قاعدة البيانات: | OpenAIRE |
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