دورية أكاديمية
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates.
العنوان: | Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. |
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المؤلفون: | Moon, J. S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P. M., Jernigan, G., Tedesco, J. L., VanMil, B., Myers-Ward, R., Eddy, Jr., C., Gaskill, D. K. |
المصدر: | IEEE Electron Device Letters; Jun2009, Vol. 30 Issue 6, p650-652, 3p, 1 Chart, 4 Graphs |
مصطلحات موضوعية: | GRAPHENE, POLYCYCLIC aromatic hydrocarbons, FIELD-effect transistors, TRANSISTORS, RADIO frequency, SEMICONDUCTORS, SEMICONDUCTOR industry |
مستخلص: | We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect transistors (FETs), where the epitaxial-graphene layer is formed by graphitization of 2-in-diameter Si-face semi-insulating 6H-SiC (0001) substrates. The gate is processed with a metal gate on top of a high-k Al |
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قاعدة البيانات: | Complementary Index |
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