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1دورية أكاديمية
المؤلفون: A. Yoshikawa, V. Kochurikhin, T. Tomida, I. Takahashi, K. Kamada, Y. Shoji, K. Kakimoto
المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
مصطلحات موضوعية: Gallium oxide, Oxide crystal growth without precious metal crucible, Melt growth, Cold crucible, Oxide semiconductor, Wide bandgap semiconductor, Medicine, Science
وصف الملف: electronic resource
العلاقة: https://doaj.org/toc/2045-2322Test
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2دورية أكاديمية
المؤلفون: S. M. Mahbubur Rahman, Md. Sakib Hasan Khan, Rafiqul Islam
مصطلحات موضوعية: Two-Dimensional Transition Metal Carbides and Nitrides MXenes, Materials Chemistry, Materials Science, Physical Sciences, Two-Dimensional Materials, Memristive Devices for Neuromorphic Computing, Electrical and Electronic Engineering, FOS Electrical engineering, electronic engineering, information engineering, Engineering, Band gap, Materials science, Wide-bandgap semiconductor, Optoelectronics, Nanotechnology, FOS Nanotechnology, Engineering physics, Physics
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3دورية أكاديمية
المؤلفون: John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, S. Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
مصطلحات موضوعية: First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, Physical Sciences, Power Electronics Technology, Electrical and Electronic Engineering, FOS Electrical engineering, electronic engineering, information engineering, Engineering, Atomic Layer Deposition Technology, AlGaN/GaN HEMTs, High-Temperature Electronics, High-k Dielectrics, GaN Power Devices, Ohmic contact, Materials science, Heterojunction, Wide-bandgap semiconductor, Optoelectronics, Gallium nitride, Nanotechnology, FOS Nanotechnology, Layer electronics
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4دورية أكاديمية
المؤلفون: Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, S. Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, André Bélanger, Patrick K. Darmawi-Iskandar, Zlatan Akšamija, R. J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
مصطلحات موضوعية: First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, Physical Sciences, Power Electronics Technology, Electrical and Electronic Engineering, FOS Electrical engineering, electronic engineering, information engineering, Engineering, Zinc Oxide Nanostructures, Materials Chemistry, Materials Science, GaN Power Devices, High-Temperature Electronics, AlGaN/GaN HEMTs, Transparent Conductors, GaN, Venus, Materials science, Optoelectronics, Transistor, Wide-bandgap semiconductor, Mode computer interface, Nanotechnology, FOS Nanotechnology, Engineering physics, Computer science, Physics, Astrobiology, Electrical engineering
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5دورية أكاديمية
المؤلفون: Md. Najmus Sakib, Tanvir Ahmed, Md Adam Shafiulla, Farzana Afroj, Afiya Akter Piya, Siraj Ud Daula Shamim
مصطلحات موضوعية: Synthesis and Properties of Boron-based Materials, Materials Chemistry, Materials Science, Physical Sciences, Nonlinear Optical Materials and Properties, Electronic, Optical and Magnetic Materials, First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, AlGaN/GaN HEMTs, Adsorption, Materials science, Drug, Wide-bandgap semiconductor, Computational chemistry, Chemical engineering, FOS Chemical engineering, Nanotechnology, FOS Nanotechnology, Chemistry, Physical chemistry, Optoelectronics, Pharmacology, Medicine, Engineering
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6دورية أكاديمية
المؤلفون: Yuanlin Liang, Haisheng Chen, Dianmeng Dong, Jiaxing Guo, Xiaona Du, Taiyu Bian, Fan Zhang, Zhenping Wu, Yang Zhang
المصدر: Energies, Vol 17, Iss 6, p 1397 (2024)
مصطلحات موضوعية: amorphous-to-crystalline transition, upconversion luminescence, wide bandgap semiconductor, thin films, lanthanide doped phosphors, Technology
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Hamzah, Nur Atiqah, Md Sahar, Mohd Ann Amirul Zulffiqal, Tan, Aik Kwan, Ahmad, Mohd Anas, Abdul Malik, Muhammad Fadhirul Izwan, Loo, Chin Chyi, Chang, Wei Sea, Ng, Sha Shiong
المصدر: Microelectronics International, 2022, Vol. 40, Issue 1, pp. 8-16.
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8دورية أكاديمية
المؤلفون: Ander Udabe, Igor Baraia-Etxaburu, David Garrido Diez
المصدر: IEEE Access, Vol 11, Pp 48628-48650 (2023)
مصطلحات موضوعية: GaN devices, review, wide bandgap semiconductor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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9دورية أكاديمية
المؤلفون: Anliang Lu, Limin Yang, Chaoqun Dang, Heyi Wang, Yang Zhang, Xiaocui Li, Hongti Zhang, Yang Lu
المصدر: Functional Diamond, Vol 2, Iss 1, Pp 151-166 (2022)
مصطلحات موضوعية: diamond, electronic properties, bandgap modulation, elastic strain engineering, wide bandgap semiconductor, functional device, Materials of engineering and construction. Mechanics of materials, TA401-492
وصف الملف: electronic resource
العلاقة: https://doaj.org/toc/2694-1120Test
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10دورية أكاديمية
المؤلفون: Shaopeng Wang, Jiahai Huang, Yizhang Wu, Huimin Hao
المصدر: Nanomaterials, Vol 14, Iss 3, p 275 (2024)
مصطلحات موضوعية: 2D wide-bandgap semiconductor material, MoS2, piezoelectric effect, chemical vapor deposition, micro-displacement sensor, Chemistry, QD1-999
وصف الملف: electronic resource