المؤلفون: Grzegorz Głuszko, Lidia Łukasiak, Enrico Gili, Peter Ashburn

المصدر: Journal of Telecommunications and Information Technology, Iss 3 (2023)

مصطلحات موضوعية: charge-pumping, FILOX, interface trap, interface traps, MOSFET, vertical MOSFET, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

وصف الملف: electronic resource

العلاقة: https://jtit.pl/jtit/article/view/833Test; https://doaj.org/toc/1509-4553Test; https://doaj.org/toc/1899-8852Test

الوصول الحر: https://doaj.org/article/86e7e9b1960b4615a7c81b301e958170Test

المؤلفون: Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe

المصدر: Journal of Telecommunications and Information Technology, Iss 2 (2023)

مصطلحات موضوعية: vertical MOSFET, 3C-SiC, channel mobility, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

وصف الملف: electronic resource

العلاقة: https://jtit.pl/jtit/article/view/808Test; https://doaj.org/toc/1509-4553Test; https://doaj.org/toc/1899-8852Test

الوصول الحر: https://doaj.org/article/dad5163e3c7c49e2bd7efe43f00288cbTest

المؤلفون: Jia-He Zhu, Da-Wei Wang, Wen-Sheng Zhao, Jia-Yun Dai, Gaofeng Wang

المصدر: Electronics; Volume 10; Issue 18; Pages: 2241

مصطلحات موضوعية: vertical MOSFET, through-oxide-via, silicon-on-insulator, electrothermal simulation, self-heating effect

وصف الملف: application/pdf

العلاقة: Microelectronics; https://dx.doi.org/10.3390/electronics10182241Test

الإتاحة: https://doi.org/10.3390/electronics10182241Test

المؤلفون: Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., Arslanbekov, R. R.

مصطلحات موضوعية: Schottky diodes, Silicon carbide, single-event effects, vertical MOSFET, elektroniikkakomponentit, puolijohteet, säteilyfysiikka, diodit

وصف الملف: application/pdf; 135-139; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 67; Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., & Arslanbekov, R.R. (2020). Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes. IEEE Transactions on Nuclear Science , 67 (1), 135-139. https://doi.org/10.1109/TNS.2019.2947866Test; CONVID_33260673; URN:NBN:fi:jyu-201910174498; http://urn.fi/URN:NBN:fi:jyu-201910174498Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-201910174498Test

المؤلفون: Hentschel, R., Wachowiak, A., Großer, A., Kotzea, S., Debald, A., Kalisch, H., Vescan, A., Jahn, A., Schmult, S., Mikolajick, T.

مصطلحات موضوعية: Galliumnitrid, pseudo-vertikal, MOSFET, Leistungshalbleiter, High-k-Dielektrikum, Body-Bias, Trench-Gate, Magnesium-Dotierung, Gallium nitride, Pseudo-vertical, MOSFET, Power semiconductor, High-k dielectric, Body bias, Trench gate, Magnesium doping, info:eu-repo/classification/ddc/620, ddc:620

العلاقة: info:eu-repo/grantAgreement/Bundesministerium für Bildung und Forschung/Mikroelektronik. Vertrauenswürdig und nachhaltig. Für Deutschland und Europa/16ES0145K//Entwicklung von Zwei-Schicht dotierten GaN-Substraten und vertikalen Hoch-Volt-Transistoren/ZweiGaN

الإتاحة: https://tud.qucosa.de/id/qucosa%3A81245Test
https://tud.qucosa.de/api/qucosa%3A81245/attachment/ATT-0Test/

المؤلفون: Johnson, Robert A., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Zhang, Enxia, Ryder, Landen D., Reed, Robert A., Schrimpf, Ronald D., Kozub, John A., Lauenstein, Jean-Marie, Javanainen, Arto

مصطلحات موضوعية: pulse height analysis, Schottky diodes, silicon carbide, single-event effects, two-photon absorption, vertical MOSFET, säteilyfysiikka, diodit, elektroniikkakomponentit, transistorit

وصف الملف: application/pdf; 1694-1701; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 66; Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Zhang, E., Ryder, L. D., Reed, R. A., Schrimpf, R. D., Kozub, J. A., Lauenstein, J.-M., & Javanainen, A. (2019). Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments. IEEE Transactions on Nuclear Science , 66 (7), 1694-1701. https://doi.org/10.1109/TNS.2019.2922883Test; CONVID_30946007; TUTKAID_81671; URN:NBN:fi:jyu-201907173642; http://urn.fi/URN:NBN:fi:jyu-201907173642Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-201907173642Test

المؤلفون: Kikuo YAMABE, ShuJun YE, Tetsuo ENDOH, 山部 紀久夫, 葉 術軍, 遠藤 哲郎

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2625

المؤلفون: Hisashi Murakami, Ken Goto, ManHoi Wong, Masataka Higashiwaki, Yoshinao Kumagai

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2923

المؤلفون: Bakowski, Mietek, Gisslander, Ulf

المصدر: International Conference on Electrical, Computer, Communications and Mechatronics Engineering, ICECCME 2022.

مصطلحات موضوعية: benchmarking with SiC, device modeling, GaN, specific on-resistance, TCAD, vertical MOSFET, WBG devices, Benchmarking, Electronic design automation, III-V semiconductors, MOSFET devices, Silicon carbide, Wide band gap semiconductors, Benchmarking with silicon carbide, Device modelling, High voltage devices, MOSFETs, Rated voltages, Silicon carbide MOSFETs, Specific-on-resistance, Vertical MOSFETs, WBG device, Gallium nitride

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-64011Test

المؤلفون: Akito Kuramata, Hisashi Murakami, Ken Goto, ManHoi Wong, Masataka Higashiwaki, Shigenobu Yamakoshi, Yoshinao Kumagai

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :3018