نتائج البحث

1

تقرير

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

المؤلفون: Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG, Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn

مصطلحات موضوعية: Algan/aln/gan, Hemt, Mocvd, Sic Substrate, Power Device, 半导体材料, modulation-doped field-effect transistors, atomic layer deposition, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), atomic layer epitaxial growth

العلاقة: SOLID-STATE ELECTRONICS; Wang XL; Chen TS; Xiao HL; Tang J; Ran JX; Zhang ML; Feng C; Hou QF; Wei M; Jiang LJ; Li JM; Wang ZG .An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application ,SOLID-STATE ELECTRONICS,2009 ,53(3):332-335; http://ir.semi.ac.cn/handle/172111/7265Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7265Test

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2

تقرير

Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer

المؤلفون: Tan XT, Zheng HZ, Liu J, Zhu H, Xu P, Li GR, Yang FH, Zheng HZ Chinese Acad Sci Inst Semicond State Key Microstruct & Superlattices POB 912 Beijing 100083 Peoples R China. E-mail Address: hzzheng@semi.ac.cn

مصطلحات موضوعية: Hemt, 2deg, 半导体材料, modulation-doped field-effect transistors, electron gas, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), 电子气, fermi gas, hole gas, luttinger liquid

العلاقة: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; Tan XT; Zheng HZ; Liu J; Zhu H; Xu P; Li GR; Yang FH .Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2009 ,41(8):1379-1381; http://ir.semi.ac.cn/handle/172111/7065Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7065Test

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3

تقرير

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

المؤلفون: Guo, LC, Wang, XL, Wang, CM, Mao, HL, Ran, JX, Luo, WJ, Wang, XY, Wang, BZ, Fang, CB, Hu, GX, Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn

مصطلحات موضوعية: Gan, Hemt, 2deg, Mobility, Polarization, 半导体材料, modulation-doped field-effect transistors, electron gas, migration, internal, electromagnetic wave polarisation, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt

العلاقة: MICROELECTRONICS JOURNAL; Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX .The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure ,MICROELECTRONICS JOURNAL,2008 ,39(5): 777-781; http://ir.semi.ac.cn/handle/172111/6626Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6626Test

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4

تقرير

Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

المؤلفون: Wu, BP, Wu, DH, Ni, HQ, Huang, SS, Zhan, F, Xiong, YH, Xu, YQ, Niu, ZC, Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn

مصطلحات موضوعية: Layers, Surfactant, Substrate, Hemt, Sb, 半导体材料, modulation-doped field-effect transistors, antimony, lamina, plies, 底物, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt

العلاقة: CHINESE PHYSICS LETTERS; Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC .Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2007 ,24(12): 3543-3546; http://ir.semi.ac.cn/handle/172111/6952Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6952Test

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5

تقرير

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

المؤلفون: Wang XL, Wang CM, Hu GX, Wang JX, Ran JX, Fang CB, Li JP, Zeng YP, Li JM, Liu XY, Liu J, Qian H, Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn

مصطلحات موضوعية: Hemt, Gan, Mocvd, Power Device, Field-effect Transistors, Surface Passivation, 半导体材料, modulation-doped field-effect transistors, atomic layer deposition, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics)

العلاقة: SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES; Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H .Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates ,SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES,2005,48(6):808-814; http://ir.semi.ac.cn/handle/172111/10868Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10868Test

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6

تقرير

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

المؤلفون: Wang XL, Wang CM, Hu GX, Wang JX, Chen TS, Jiao G, Li JP, Zeng YP, Li JM, Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn, cmwang@red.semi.ac.cn

العلاقة: SOLID-STATE ELECTRONICS; Wang, XL; Wang, CM; Hu, GX; Wang, JX; Chen, TS; Jiao, G; Li, JP; Zeng, YP; Li, JM .Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates ,SOLID-STATE ELECTRONICS,AUG 2005,49 (8):1387-1390; http://ir.semi.ac.cn/handle/172111/8488Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/8488Test

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