المؤلفون: Shuxiang Sun, Xintong Xie, Pengfei Zhang, Zhijia Zhao, Jie Wei, Xiaorong Luo

المصدر: Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100692- (2024)

مصطلحات موضوعية: Single event transient (SET) effect, GaN HEMT, AlGaN back barrier, Buried P-GaN island, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2468217924000236Test; https://doaj.org/toc/2468-2179Test

الوصول الحر: https://doaj.org/article/0919fb2b6cc443e898c47ea37a59cfdaTest

المؤلفون: Tao Liu, Yuan Wang, Rongyao Ma, Hao Wu, Jingyu Tao, Yiren Yu, Zijun Cheng, Shengdong Hu

المصدر: Micromachines; Volume 14; Issue 5; Pages: 1074

مصطلحات موضوعية: silicon carbide (SiC), vertical diffuse metal-oxide-semiconductor field transistor (VDMOS), trench, superjunction (SJ), single-event effect (SEE), single-event transient (SET), single-event burnout (SEB), single-event gate rupture (SEGR), linear energy transfer (LET), charge enhancement factor (CEF)

وصف الملف: application/pdf

العلاقة: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14051074Test

الإتاحة: https://doi.org/10.3390/mi14051074Test

المؤلفون: Shixin Wang, Lixin Wang, Min Guo, Yuanzhe Li, Bowang Li

المصدر: Electronics; Volume 12; Issue 5; Pages: 1193

مصطلحات موضوعية: radiation-hardened-by-design (RHBD), double node upset (DNU), single-event transient (SET), self-recoverable, SET pulse filterable

وصف الملف: application/pdf

العلاقة: Microelectronics; https://dx.doi.org/10.3390/electronics12051193Test

الإتاحة: https://doi.org/10.3390/electronics12051193Test

المؤلفون: Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz

المصدر: IEEE Access, Vol 10, Pp 47169-47178 (2022)

مصطلحات موضوعية: Charge collection, single event cross section, radiation hardening, soft error, single event transient (SET), single event upset (SEU), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/9766149Test/; https://doaj.org/toc/2169-3536Test

الوصول الحر: https://doaj.org/article/3c6b73bd73c549c6baa37cba6cdcc379Test

المؤلفون: Seyedehsomayeh Hatefinasab, Akiko Ohata, Alfonso Salinas, Encarnacion Castillo, Noel Rodriguez

المصدر: IEEE Access, Vol 10, Pp 31836-31850 (2022)

مصطلحات موضوعية: Power-delay product (PDP), soft errors (SE), single event upset (SEU), high impedance state (HIS), single event transient (SET), dual interlocked storage cell (DICE), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/9737482Test/; https://doaj.org/toc/2169-3536Test

الوصول الحر: https://doaj.org/article/6d72230f030a4576823d62d8dcbccaf6Test

المؤلفون: Xiaowei He, Daheng Yue, Pengcheng Huang, Zhenyu Zhao

المصدر: IEEE Access, Vol 10, Pp 57362-57368 (2022)

مصطلحات موضوعية: Charge sharing, single event double transient (SEDT), single event transient (SET), single event triple transient (SETT), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/9780406Test/; https://doaj.org/toc/2169-3536Test

الوصول الحر: https://doaj.org/article/65fa2050fa114f309b4d7def4bfed64eTest

المؤلفون: Calomarde, Antonio, Gámiz Pérez, Francisco Jesús

مصطلحات موضوعية: Charge collection, Single event cross section, Radiation hardening, Soft error, Single event transient (SET), Single event upset (SEU), FinFET, 3D TCAD modeling

العلاقة: A. Calomarde. [et al.]. "Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact," in IEEE Access, vol. 10, pp. 47169-47178, 2022, doi: [10.1109/ACCESS.2022.3171813]; http://hdl.handle.net/10481/75098Test

الإتاحة: https://doi.org/10.1109/ACCESS.2022.3171813Test
http://hdl.handle.net/10481/75098Test

المؤلفون: Hatefinasab, Seyedehsomayeh, Salinas Castillo, Alfonso, Castillo Morales, María Encarnación, Rodríguez Santiago, Noel

مصطلحات موضوعية: Power-delay product (PDP), Soft errors (SE), Single event upset (SEU), High impedance state (HIS), Single event transient (SET), Dual interlocked storage cell (DICE), Triple path DICE (TPDICE), Quadruple-node upsets (QNUs)

العلاقة: S. Hatefinasab. [et al.]. "Highly Reliable Quadruple-Node Upset-Tolerant D-Latch," in IEEE Access, vol. 10, pp. 31836-31850, 2022, doi: [10.1109/ACCESS.2022.3160448]; http://hdl.handle.net/10481/74320Test

الإتاحة: https://doi.org/10.1109/ACCESS.2022.3160448Test
http://hdl.handle.net/10481/74320Test

المؤلفون: Xi Chen, Qiancheng Guo, Hengzhou Yuan, Yang Guo

المصدر: Symmetry; Volume 14; Issue 4; Pages: 788

مصطلحات موضوعية: radiation-hardened-by-design (RHBD), single-event transient (SET), voltage regulator, low-dropout regulator (LDO), voltage-controlled oscillator (VCO)

وصف الملف: application/pdf

العلاقة: Computer Science and Symmetry/Asymmetry; https://dx.doi.org/10.3390/sym14040788Test

الإتاحة: https://doi.org/10.3390/sym14040788Test

المؤلفون: Rui Chen, WANG ZIYU, Li Sai

مصطلحات موضوعية: heavy ion, single event upset (SEU), single event transient (SET)

الإتاحة: https://doi.org/10.57760/sciencedb.space.01793Test