المؤلفون: Shu-Ting Yang, Tilo H. Yang, Bor-Wei Liang, Han-Chieh Lo, Wen-Hao Chang, Po-Yen Lin, Ching-Yuan Su, Yann-Wen Lan

مصطلحات موضوعية: Biophysics, Biochemistry, Genetics, Molecular Biology, Neuroscience, Physiology, Mental Health, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, switching ratio alongside, switching drain voltages, submicron memtransistors made, oxide traps within, multistate memory effects, monocrystalline monolayer mos, garnered increasing attention, feature defective channels, efficient neuromorphic devices, optimized memtransistor demonstrates, decreasing channel length, channel length diminishes, memtransistor behavior becomes, 2 , memtransistor designed, channel lengths, memtransisor behavior, work highlights, understanding holds, set voltage, intrinsic properties

العلاقة: https://figshare.com/articles/journal_contribution/Submicron_Memtransistors_Made_from_Monocrystalline_Molybdenum_Disulfide/25065960Test

الإتاحة: https://doi.org/10.1021/acsnano.3c09030.s001Test
https://figshare.com/articles/journal_contribution/Submicron_Memtransistors_Made_from_Monocrystalline_Molybdenum_Disulfide/25065960Test

المؤلفون: Xiaoxin Pan, Xiang Chen, Jinxia Duan, Yan Long, Yongcheng Wu, Jie Tang, Guokun Ma, Jun Zhang, Hao Wang

مصطلحات موضوعية: Medicine, Genetics, Physiology, Evolutionary Biology, Ecology, Sociology, Developmental Biology, Hematology, Infectious Diseases, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, several stretching cycles, rapid information storage, low set voltage, 6 v ), generation memory devices, 4 , 3 , >, 3 , performance mhp rrams, x <, >, 3 –<, access memory, sub ><, skyrocketing demand, rrams ), resistive random

العلاقة: https://figshare.com/articles/journal_contribution/Three-Dimensional_Two-Dimensional_Perovskite-Resistive_Random-Access_Memory_with_Low_SET_Voltage_and_High_Stability/24595896Test

الإتاحة: https://doi.org/10.1021/acsaelm.3c01324.s001Test
https://figshare.com/articles/journal_contribution/Three-Dimensional_Two-Dimensional_Perovskite-Resistive_Random-Access_Memory_with_Low_SET_Voltage_and_High_Stability/24595896Test

المؤلفون: Amitesh Goswami, Jatinder Kumar

المصدر: Engineering Science and Technology, an International Journal, Vol 17, Iss 4, Pp 236-246 (2014)

مصطلحات موضوعية: Material removal rate, Pulse-off time, Pulse-on time, Spark gap set voltage, Surface roughness, Utility concept, WEDM, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2215098614000524Test; https://doaj.org/toc/2215-0986Test

الوصول الحر: https://doaj.org/article/896dcc5faf2942b3b1c3a30ffdbc6a8eTest

المؤلفون: Ziqi Xu, Nengxu Li, Guanhaojie Zheng, Qi Chen, Huanping Zhou

المساهمون: Happy Lab, College of Engineering,Peking University

المصدر: 知网

مصطلحات موضوعية: perovskite, memory device, set voltage, trap density, hysteresis

العلاقة: 第四届新型太阳能电池学术研讨会. 2017, 1.; 1925992; http://hdl.handle.net/20.500.11897/479594Test

الإتاحة: https://doi.org/20.500.11897/479594Test
https://hdl.handle.net/20.500.11897/479594Test

المؤلفون: Byung-Gook PARK, Hyungjin KIM, Jeong-Hoon OH, Kyung-Chang RYOO, Sunghun JUNG

المصدر: IEICE Transactions on Electronics. 2012, E95.C(5):842

المؤلفون: Huang, Xuan, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Shih, Chih-Cheng, Zhang, Rui, Huang, Syuan-Yong, Chen, Kai-Huang, Chen, Jung-Hui, Wang, Huei-Jruan, Chen, Wen-Jen, Zhang, Fengyan, Chen, Chao, Sze, Simon M.

المساهمون: Chang, TC (reprint author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan., Xiamen Univ, Sch Energy Res, Xiamen 361000, Peoples R China., Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan., Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan., Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China., Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan., Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 80201, Taiwan., Univ Texas Austin, Austin, TX 78705 USA.

المصدر: SCI ; EI

مصطلحات موضوعية: RRAM, set voltage, zinc oxide, concentration gradient, OXIDE, ELECTRODE, DEVICES

العلاقة: IEEE ELECTRON DEVICE LETTERS.2014,35,(12),1227-1229.; 757189; http://hdl.handle.net/20.500.11897/207463Test; WOS:000345575400022

الإتاحة: https://doi.org/20.500.11897/207463Test
https://doi.org/10.1109/LED.2014.2360525Test
https://hdl.handle.net/20.500.11897/207463Test

المساهمون: Hirao, K

المصدر: Rep. Ionosphere Space Res. Jap. 25: No. 1, 65-9(Mar 1971).; Other Information: Orig. Receipt Date: 31-DEC-72

وصف الملف: Medium: X

الوصول الحر: http://www.osti.gov/scitech/biblio/4726950Test

المؤلفون: Wenzhong Zhang, Haruka Komatsu, Shingo Maruyama, Kenichi Kaminaga, Yuji Matsumoto

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Cell Biology, Biotechnology, Ecology, Infectious Diseases, Computational Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, ∼ 44 cycles, nonvolatile resistive random, mim ]­[ pf, low set voltage, liquid crystal phase, ionic liquid crystal, curve fittings suggested, composed filaments within, basic electrical properties, stable switching behavior, nonvolatile resistive memory, following operation principle, ilc interfaces play, deposited ilc films, based electronic devices, ∼ 1 v, 16 , v <, switching layer

العلاقة: https://figshare.com/articles/journal_contribution/Ionic_Liquid_Crystal_Thin_Film_as_Switching_Layer_in_Nonvolatile_Resistive_Memory/24480447Test

الإتاحة: https://doi.org/10.1021/acsami.3c13980.s001Test
https://figshare.com/articles/journal_contribution/Ionic_Liquid_Crystal_Thin_Film_as_Switching_Layer_in_Nonvolatile_Resistive_Memory/24480447Test

المؤلفون: Vivek Singh, Jyoti Sinha, Sushobhan Avasthi

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Cell Biology, Biotechnology, Ecology, Developmental Biology, Science Policy, Computational Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, resistive switching device, memristive switching memristor, grain structure control, area demands lots, achieving memristive characteristics, process engineering domains, memristor using cu, cu vacancy migration, set voltage scales, 2 , reset voltage, process scalable, ∼ 1, x <, wall architecture, vacancies transport, notable ways, large areas

العلاقة: https://figshare.com/articles/journal_contribution/Investigation_of_Vacancies_Transport_in_the_Bilayer_of_the_Cu_sub_2_sub_O_sub_1_i_x_i_sub_CuO_sub_1_i_y_i_sub_Resistive_Switching_Device_and_Effect_of_Growth_Temperature_on_Memristive_Switching/24793619Test

الإتاحة: https://doi.org/10.1021/acsaelm.3c00489.s001Test
https://figshare.com/articles/journal_contribution/Investigation_of_Vacancies_Transport_in_the_Bilayer_of_the_Cu_sub_2_sub_O_sub_1_i_x_i_sub_CuO_sub_1_i_y_i_sub_Resistive_Switching_Device_and_Effect_of_Growth_Temperature_on_Memristive_Switching/24793619Test

المؤلفون: Amitesh Goswami, Jatinder Kumar

المصدر: Engineering Science and Technology, an International Journal, Vol 17, Iss 4, Pp 236-246 (2014)

مصطلحات موضوعية: Pulse-on time, Engineering drawing, Engineering, Computer Networks and Communications, Mechanical engineering, Biomaterials, Utility concept, Taguchi methods, Electrical discharge machining, Surface roughness, Machining, WEDM, Civil and Structural Engineering, Fluid Flow and Transfer Processes, business.industry, Mechanical Engineering, Metals and Alloys, Process (computing), Peak current, Nimonic, Pulse-off time, Electronic, Optical and Magnetic Materials, Hardware and Architecture, lcsh:TA1-2040, Material removal rate, Ton, business, lcsh:Engineering (General). Civil engineering (General), Spark gap set voltage

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e127e6446a930e5652446e5522d84795Test