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المؤلفون: Lourenco, Nelson E., Fleetwood, Zachary E., Ildefonso, Adrian, Wachter, Mason T., Roche, Nicolas J.-H., Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki, Pauline, Raman, Ashok, Cressler, John D., Itsuji, Hiroaki, Kobayashi, Daisuke, Hirose, Kazuyuki
المصدر: IEEE Transactions on Nuclear Science. 64(1):406-414
مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Heterojunction bipolar transistor, single-event transient (SET), 02 engineering and technology, silicongermanium technology, BiCMOS, 01 natural sciences, SiGe HBT, chemistry.chemical_compound, single-event effects (SEE), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Transient response, Electrical and Electronic Engineering, Scaling, Common emitter, 010308 nuclear & particles physics, business.industry, hardening, 020208 electrical & electronic engineering, Doping, Charge collection, Electrical engineering, semiconductor process scaling, NanoTCAD, Silicon-germanium, radiation, technology scaling, Nuclear Energy and Engineering, chemistry, Optoelectronics, Transient (oscillation), two-photon absorption experiments, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::247f4231d1c2171a1f801fe29e41e1c4Test
http://id.nii.ac.jp/1696/00029337Test/ -
2مورد إلكتروني
مصطلحات الفهرس: Charge collection, hardening, NanoTCAD, radiation, semiconductor process scaling, SiGe HBT, silicongermanium technology, single-event effects (SEE), single-event transient (SET), technology scaling, two-photon absorption experiments., Journal Article, jaxa, 学術雑誌論文, IS
URL: info:doi/10.1109/tns.2016.2633997