المؤلفون: Wonwoo Kho, Hyunjoo Hwang, Seung‐Eon Ahn

المصدر: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)

مصطلحات موضوعية: ferroelectric tunnel junction, intermediate resistance state, parallel logic‐in‐memory, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2199-160XTest

الوصول الحر: https://doaj.org/article/b6cedf692d8747d2b7defe7234a685baTest

المؤلفون: Kuan-Sheng Li, Min-Kun Huang, Yeong-Her Wang, Yuan-Chieh Tseng, Chun-Jung Su

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Biotechnology, Ecology, Hematology, Infectious Diseases, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, systematical electrical characterizations, interfacial layer appeared, assisted tunneling appeared, 1 × 10, fabricated devices showed, high temperature regimes, high resistance state, multilayer film accounted, major rs properties, low resistance state, 4 , 2 , memory devices, work presents, various temperatures, vacancies occurring, ultrathin memristor, ultrahigh density, transfer process

العلاقة: https://figshare.com/articles/journal_contribution/Wafer-Scale_Fabrication_of_Al_MoS_sub_2_sub_Poly-Si_Memristors_and_Insight_of_Mechanism_on_the_Resistive_Switching/25066053Test

الإتاحة: https://doi.org/10.1021/acsaelm.3c01314.s001Test
https://figshare.com/articles/journal_contribution/Wafer-Scale_Fabrication_of_Al_MoS_sub_2_sub_Poly-Si_Memristors_and_Insight_of_Mechanism_on_the_Resistive_Switching/25066053Test

المؤلفون: Hae-In Kim, Taehun Lee, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Kwangeun Kim, Jaewon Jang

المصدر: Nanomaterials, Vol 13, Iss 17, p 2462 (2023)

مصطلحات موضوعية: Y2O3, Al2O3, sol–gel, resistive random-access-memory, high-resistance state, low-resistance state, Chemistry, QD1-999

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/2079-4991/13/17/2462Test; https://doaj.org/toc/2079-4991Test

الوصول الحر: https://doaj.org/article/ccf002f8ffa54d4f82194ead48a6b818Test

المؤلفون: Chuangye Yao, Dinghua Bao

مصطلحات موضوعية: Biophysics, Medicine, Biotechnology, Evolutionary Biology, Ecology, Hematology, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, uniform initialization voltage, spinel cobalt oxide, present study provides, lrs ), respectively, local electric field, cation valence state, concentrated switching voltage, low resistance state, high resistance state, resistive switching memories, enhancing resistive switching, schottky emission conduction, cycle switching endurance, 2 +, resistive switching performance, au ncs create, 3 , resistive switching, dependent resistance

العلاقة: https://figshare.com/articles/journal_contribution/Au_Nanocrystals_Modulate_Resistive_Switching_and_Magnetic_Properties_of_Spinel_Cobalt_Oxide-Based_Memory_Devices/24908540Test

الإتاحة: https://doi.org/10.1021/acsanm.3c04690.s001Test
https://figshare.com/articles/journal_contribution/Au_Nanocrystals_Modulate_Resistive_Switching_and_Magnetic_Properties_of_Spinel_Cobalt_Oxide-Based_Memory_Devices/24908540Test

المؤلفون: Junming He, Baoyan Liang, Weibo Kong, Jianan Dai, Fangmeng Liu, Si Pan, Chenguang Wang, Peng Sun, Bonan Kang, Yue Wang, Geyu Lu

مصطلحات موضوعية: Biophysics, Medicine, Molecular Biology, Biotechnology, Developmental Biology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, smell became irreplaceable, simulated exhaled breath, electronic transmission path, diyl )) tris, density functional theory, complex impedance plots, sensing material operating, dft ), attributing, could absorb nh, low resistance state, favorable sensing properties, device structure optimization, low resistance nh, device could self, 3 , 3dcnpz based nh, sensing performance, performance device, rh ), improved nh, healing properties

العلاقة: https://figshare.com/articles/journal_contribution/Self-Healing_Laminated_and_Low_Resistance_NH_sub_3_sub_Sensor_Based_on_6_6_6_-_Nitrilotris_benzene-4_1-diyl_tris_5-phenylpyrazine-2_3-dicarbonitrile_Sensing_Material_Operating_at_Room_Temperature/24921023Test

الإتاحة: https://doi.org/10.1021/acssensors.3c01804.s001Test
https://figshare.com/articles/journal_contribution/Self-Healing_Laminated_and_Low_Resistance_NH_sub_3_sub_Sensor_Based_on_6_6_6_-_Nitrilotris_benzene-4_1-diyl_tris_5-phenylpyrazine-2_3-dicarbonitrile_Sensing_Material_Operating_at_Room_Temperature/24921023Test

المؤلفون: Vokhmintsev, A., Petrenyov, I., Kamalov, R., Weinstein, I.

المصدر: Nanotechnology

مصطلحات موضوعية: MEMRISTOR, OXYGEN VACANCIES, QUANTUM CONDUCTIVE FILAMENTS, RESISTANCE STATE, ZRO2, DIGITAL STORAGE, ELECTRIC FIELDS, GOLD COMPOUNDS, MEMRISTORS, NANOTUBES, QUANTUM THEORY, ZIRCONIA, CONDUCTIVE FILAMENTS, HIGH RESISTANCE, LOW RESISTANCE, MEMORY EFFECTS, QUANTUM CONDUCTIVE FILAMENT, RESISTANCE RATIO, RESISTIVE SWITCHING MEMORY, ZIRCONIA NANOTUBES

وصف الملف: application/pdf

العلاقة: Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes / A. Vokhmintsev, I. Petrenyov, R. Kamalov et al. // Nanotechnology. — 2022. — Vol. 33. — Iss. 7. — 075208.; All Open Access, Green; http://elar.urfu.ru/handle/10995/111396Test; 85121784261; 000723405100001

الإتاحة: https://doi.org/10.1088/1361-6528/ac2e22Test
http://elar.urfu.ru/handle/10995/111396Test

المؤلفون: Zahedinejad, M., Fulara, H., Khymyn, R., Houshang, A., Dvornik, M., Fukami, S., Kanai, S., Ohno, H., Åkerman, Johan

المصدر: Nature Materials. 21(1):81-87

مصطلحات موضوعية: Cobalt compounds, Electric fields, Interface states, Magnetic anisotropy, Memristors, High-resistance state, Large spin, Low-resistance state, Memory units, Memristor, Nano-oscillator, Neuromorphic computing, Oscillator arrays, Perpendicular magnetic anisotropy, Ultra-fast, Synchronization

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-313201Test

المؤلفون: D. J. J. Loy, P. A. Dananjaya, X. L. Hong, D. P. Shum, W. S. Lew

المصدر: Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)

مصطلحات موضوعية: Conduction Mechanism, Schottky Emission (SE), High Resistance State (HRS), Resistive Random Access Memory (RRAM), RRAM Devices, Medicine, Science

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2045-2322Test

الوصول الحر: https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645Test

المؤلفون: Nils Kopperberg (11742322), Stefan Wiefels (4053343), Sergej Liberda (11742325), Rainer Waser (1424911), Stephan Menzel (215374)

مصطلحات موضوعية: Medicine, Biotechnology, Sociology, Immunology, Cancer, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, valence change mechanism, understood much better, programmed resistance state, oxygen vacancies plays, important role regarding, high resistive state, shaping algorithms aiming, retention failure consistently, read noise limits, term retention failure, explain instability phenomena, shaping failure, term retention, read noise, retention investigations, term instability, read window, random diffusion, physical processes, physical origin, oxide layer, limiting domains, lasting effect

العلاقة: https://figshare.com/articles/journal_contribution/A_Consistent_Model_for_Short-Term_Instability_and_Long-Term_Retention_in_Filamentary_Oxide-Based_Memristive_Devices/17065276Test

الإتاحة: https://doi.org/10.1021/acsami.1c14667.s001Test

المؤلفون: Venkata K Perla (10164215), Kaushik Mallick (1713229)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Physiology, Biotechnology, Cancer, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, RESET, CNNO, ratio, OFF, carbon Nitride-Supported Nickel Oxi., resistance state, formation, READ, CN, Resistive Memory Application, nickel oxide nanoparticles, X-ray diffraction pattern, device

العلاقة: https://figshare.com/articles/journal_contribution/Carbon_Nitride-Supported_Nickel_Oxide_Nanoparticles_for_Resistive_Memory_Application/14056373Test

الإتاحة: https://doi.org/10.1021/acsanm.0c03065.s001Test