المؤلفون: Fiori, F

المساهمون: Fiori, F

مصطلحات موضوعية: e-mode GaN Power HEMT, Radio Frequency Interference, Isolated Gate Driver, Integrated Circuit Susceptibility

وصف الملف: STAMPA

العلاقة: info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-0976-8; ispartofbook:Symposium on Electromagnetic Compatibility & Signal/Power Integrity; 2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI); firstpage:548; lastpage:553; numberofpages:6; https://hdl.handle.net/11583/2982508Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85173901793; https://ieeexplore.ieee.org/document/10241733Test

الإتاحة: https://doi.org/10.1109/EMCSIPI50001.2023.10241733Test
https://hdl.handle.net/11583/2982508Test
https://ieeexplore.ieee.org/document/10241733Test

المؤلفون: Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto

المصدر: Electronics Letters, Vol 59, Iss 4, Pp n/a-n/a (2023)

مصطلحات موضوعية: III–V semiconductors, power amplifiers, power HEMT, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/0013-5194Test; https://doaj.org/toc/1350-911XTest

الوصول الحر: https://doaj.org/article/e884dbfc5aef45eea2bf03ce48d6a2f8Test

المؤلفون: Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang

المصدر: Materials; Volume 15; Issue 6; Pages: 2058

مصطلحات موضوعية: GaN power HEMT, MOCVD, Fe doping, nano-mask, 3D growth, diffusion

وصف الملف: application/pdf

العلاقة: Electronic Materials; https://dx.doi.org/10.3390/ma15062058Test

الإتاحة: https://doi.org/10.3390/ma15062058Test

المؤلفون: Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi

المساهمون: Zagni, Nicolo', Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Verzellesi, Giovanni

مصطلحات موضوعية: Auto-compensation, Breakdown voltage, Carbon doping, Compensation ratio, Current collapse, GaN power HEMT

العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:000666039200001; volume:12; issue:6; firstpage:1; lastpage:10; journal:MICROMACHINES; http://hdl.handle.net/11380/1246736Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85108810225

الإتاحة: https://doi.org/10.3390/mi12060709Test
http://hdl.handle.net/11380/1246736Test

المؤلفون: Tallarico A. N., Stoffels S., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

المساهمون: Tallarico A.N., Stoffels S., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: breakdown voltage, doping concentration, magnesium compensation proce, p-type GaN gate, Positive bias temperature instability, power HEMT, threshold voltage instability

وصف الملف: ELETTRONICO

العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:000464306900008; volume:40; issue:4; firstpage:518; lastpage:521; numberofpages:4; journal:IEEE ELECTRON DEVICE LETTERS; http://hdl.handle.net/11585/705151Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85064093597; https://ieeexplore.ieee.org/document/8636498Test

الإتاحة: https://doi.org/10.1109/LED.2019.2897911Test
http://hdl.handle.net/11585/705151Test
https://ieeexplore.ieee.org/document/8636498Test

المؤلفون: Capasso G., Zanuccoli M., Tallarico A. N., Fiegna C.

المساهمون: Capasso G., Zanuccoli M., Tallarico A.N., Fiegna C.

مصطلحات موضوعية: GaN power HEMT, reliability analysi, RON degradation, VTH, drift

وصف الملف: ELETTRONICO

العلاقة: info:eu-repo/semantics/altIdentifier/isbn/978-1-6654-8497-8; info:eu-repo/semantics/altIdentifier/wos/WOS:000904209900043; ispartofbook:European Solid-State Device Research Conference; 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022; volume:2022-; firstpage:392; lastpage:395; numberofpages:4; serie:PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE; https://hdl.handle.net/11585/916829Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85142708129

الإتاحة: https://doi.org/10.1109/ESSDERC55479.2022.9947200Test
https://hdl.handle.net/11585/916829Test

المؤلفون: Peng, Kang, Eskandari, Soheila, Santi, Enrico

المصدر: IEEE Transactions on Industry Applications; Nov2016, Vol. 52 Issue 6, p4965-4975, 11p

مصطلحات موضوعية: GALLIUM nitride, GALLIUM compounds, POWER HEMT, ELECTRIC machinery, ELECTRIC current converters

المؤلفون: Zhong, Kailun, Xu, Han, Yang, Song, Zheng, Zheyang, Chen, Junting, Chen, Jing

مصطلحات موضوعية: Bootstrap, Dynamic VTH, P-GaN gate power HEMT, Static stress test, Voltage clamping circuit

العلاقة: http://repository.ust.hk/ir/Record/1783.1-113295Test; Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452232, p. 39-42; https://doi.org/10.23919/ISPSD50666.2021.9452232Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6854&rft.volume=vTest. 2021-May&rft.issue=&rft.date=2021&rft.spage=39&rft.aulast=Zhong&rft.aufirst=K.&rft.atitle=A+Bootstrap+Voltage+Clamping+Circuit+for+Dynamic+VTHCharacterization+in+Schottky-Type+p-GaN+Gate+Power+HEMT&rft.title=Proceedings+of+the+International+Symposium+on+Power+Semiconductor+Devices+and+ICs; http://www.scopus.com/record/display.url?eid=2-s2.0-85112548645&origin=inwardTest; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000684581000009Test

الإتاحة: https://doi.org/10.23919/ISPSD50666.2021.9452232Test
http://repository.ust.hk/ir/Record/1783.1-113295Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6854&rft.volume=vTest. 2021-May&rft.issue=&rft.date=2021&rft.spage=39&rft.aulast=Zhong&rft.aufirst=K.&rft.atitle=A+Bootstrap+Voltage+Clamping+Circuit+for+Dynamic+VTHCharacterization+in+Schottky-Type+p-GaN+Gate+Power+HEMT&rft.title=Proceedings+of+the+International+Symposium+on+Power+Semiconductor+Devices+and+ICs
http://www.scopus.com/record/display.url?eid=2-s2.0-85112548645&origin=inwardTest
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000684581000009Test

المؤلفون: Risbud, Dilip M.

مصطلحات موضوعية: Electrical engineering, Physics, Materials Science, GaN-on-Silicon, GaN power HEMT, Monolithic integration, Schottky

وصف الملف: application/pdf

الوصول الحر: https://escholarship.org/uc/item/5sz2q2q1Test

المؤلفون: D. Tedesco, Annunziata Sanseverino, Carmine Abbate, Francesco Velardi, Giovanni Busatto

المصدر: Microelectronics Reliability. :314-320

مصطلحات موضوعية: Materials science, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, Failure mechanisms, Short circuit instability, 0103 physical sciences, Thermal, 0202 electrical engineering, electronic engineering, information engineering, Waveform, GaN power HEMT, Electrical and Electronic Engineering, Robustness, Safety, Risk, Reliability and Quality, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Short circuit, High voltage, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, GaN power HEMT, Short circuit, Robustness, Failure mechanisms, Short circuit instability, business, Failure mode and effects analysis

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0442aad174c0bfb635f090713132ee5eTest
https://doi.org/10.1016/j.microrel.2017.07.020Test