المؤلفون: Youfeng Lai, Lixue Xia, Qingfang Xu, Qizhong Li, Kai Liu, Meijun Yang, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang, Rong Tu

المصدر: Materials; Volume 13; Issue 2; Pages: 410

مصطلحات موضوعية: N-doped <, 110>, oriented 3C-SiC bulk, preferred orientation, conductive SiC, halide laser CVD

وصف الملف: application/pdf

العلاقة: Electronic Materials; https://dx.doi.org/10.3390/ma13020410Test

الإتاحة: https://doi.org/10.3390/ma13020410Test

المؤلفون: A. Mennad

المصدر: Revue des Énergies Renouvelables, Vol 18, Iss 4, Pp 713-719 (2015)

مصطلحات موضوعية: cvd, pvd, sol-gel, ald, atomic layer deposition, omcvd, organo-metallic cvd, lcvd, laser cvd, pecvd, plasma enhanced cvd, substrat, Renewable energy sources, TJ807-830

وصف الملف: electronic resource

العلاقة: https://revue.cder.dz/index.php/rer/article/view/541Test; https://doaj.org/toc/1112-2242Test; https://doaj.org/toc/2716-8247Test

الوصول الحر: https://doaj.org/article/b4478a0551214f73af2670cd666c3f20Test

المؤلفون: Hirokazu KATSUI, Takashi GOTO, 且井 宏和, 後藤 孝

المصدر: 表面技術 / Journal of The Surface Finishing Society of Japan. 2017, 68(12):683

المؤلفون: Lai, Xia, Liu, Yang, Zhang, Han, Goto

المصدر: Materials
Volume 13
Issue 2

مصطلحات موضوعية: conductive SiC, N-doped <110>-oriented 3C-SiC bulk, preferred orientation, halide laser CVD

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=multidiscipl::93e31e2ffa45f1291687bc5e0854d1deTest

المؤلفون: Li MF(李密锋)

مصطلحات موضوعية: Inas Quantum Dots, Sacrificed Inas Layer, Molecular Beam Epitaxy, Reflection High-energy Electron, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd

العلاقة: Nanoscale Research Letters; 李密锋.In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.Nanoscale Research Letters,2013,8(1):86; http://ir.semi.ac.cn/handle/172111/24136Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/24136Test

المؤلفون: Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni and Zhichuan Niu

مصطلحات موضوعية: Branched Nanowires, Self-catalyzed, Gallium-droplets (Gds) Seeds, Epitaxy, Mbe, 半导体材料, atomic layer deposition, epitaxial growth, solid phase epitaxial growth, solid phase epitaxy, spe, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

العلاقة: APPLIED PHYSICS LETTERS; Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni and Zhichuan Niu.Strain-driven synthesis of self-catalyzed branched GaAs nanowires.APPLIED PHYSICS LETTERS,2013,102(16):163115; http://ir.semi.ac.cn/handle/172111/24153Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/24153Test

المؤلفون: Wang, Baozhu, Yan, Cuiying, Wang, Xiaoliang, Wang, B.(wangbz@semi.ac.cn)

مصطلحات موضوعية: Atomic Force Microscopy, Gallium Nitride, Molecular Beam Epitaxy, Optical Materials, Optical Properties, Reflection High Energy Electron Diffraction, Sapphire, 半导体材料, atomic layer deposition, aluminum oxide, afm (microscopy), afm, scanning force microscopy, atomic force microscope, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd

العلاقة: Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering; Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang.Structures and optical characteristics of InGaN quantum dots grown by MBE, Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,2011,40(11):2030-2032; http://ir.semi.ac.cn/handle/172111/23043Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/23043Test

المؤلفون: Wang, W, Su, SJ, Zheng, J, Zhang, GZ, Zuo, YH, Cheng, BW, Wang, QM, Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,cbw@semi.ac.cn

مصطلحات موضوعية: Gesn Alloys, Strained, Strain-relaxed, Molecular Beam Epitaxy, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd

العلاقة: CHINESE PHYSICS B; Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM.Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates,CHINESE PHYSICS B,2011,20(6):68103; http://ir.semi.ac.cn/handle/172111/22867Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/22867Test

المؤلفون: Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, Inversion Asymmetry, Heterostructures, Segregation, Interface, 半导体材料, atomic layer deposition, separation, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour

العلاقة: JOURNAL OF APPLIED PHYSICS; Yu JL; Chen YH; Jiang CY; Liu Y; Ma H.Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.53519; http://ir.semi.ac.cn/handle/172111/21277Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/21277Test

المؤلفون: Yang XG, Yang T, Wang KF, Ji HM, Ni HQ, Niu ZC, Wang ZG, Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn

مصطلحات موضوعية: High-density, Temperature-dependence, Self-formation, Layers, Well, Mbe, 半导体材料, temperature dependence, atomic layer deposition, lamina, plies, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

العلاقة: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Yang XG; Yang T; Wang KF; Ji HM; Ni HQ; Niu ZC; Wang ZG.Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):Article no.75010; http://ir.semi.ac.cn/handle/172111/21255Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/21255Test