المؤلفون: Jingjing Chen, Xujun Su, Guobing Wang, Mutong Niu, Xinran Li, Ke Xu

المصدر: Discover Nano, Vol 19, Iss 1, Pp 1-7 (2024)

مصطلحات موضوعية: GaN, Dislocation slip system, AlGaN, InGaN, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2731-9229Test

الوصول الحر: https://doaj.org/article/1a016f3b82bb416cbdd1ab13ccfbaabfTest

المؤلفون: Maryam Amirhoseiny, Majid Zandi, Ahad Kheiri

المصدر: Journal of Optoelectronical Nanostructures, Vol 9, Iss 1, Pp 37-52 (2024)

مصطلحات موضوعية: back surface field, heterojunction, ingan, simulation, solar cell, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Applied optics. Photonics, TA1501-1820

وصف الملف: electronic resource

العلاقة: https://jopn.marvdasht.iau.ir/article_6220_da94b6803ee1e77004735a837864bba0.pdfTest; https://doaj.org/toc/2423-7361Test; https://doaj.org/toc/2538-2489Test

الوصول الحر: https://doaj.org/article/6f5c797409294d7cb1ca9ae4650e6cfcTest

المؤلفون: Ikeda Kento, Kawai Kanata, Kametani Jun, Matsuyama Tetsuya, Wada Kenji, Okada Narihito, Tadatomo Kazuyuki, Okamoto Koichi

المصدر: Nanophotonics, Vol 13, Iss 8, Pp 1435-1447 (2024)

مصطلحات موضوعية: surface plasmon resonance, plasmonics, ingan/gan, semi-polar, light-emitting diodes, micro-photoluminescence, Physics, QC1-999

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2192-8614Test

الوصول الحر: https://doaj.org/article/5bb88dcb48834261b43fea44f7fdafb5Test

المؤلفون: Barrett, Rachel

المساهمون: Binks, David, Parkinson, Patrick

مصطلحات موضوعية: InGaN, Quantum Wells, Photoluminescence

الوصول الحر: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.886149Test

المؤلفون: Zhikun Hong, Junqiang Sun, Tianchi Bao, Yanan Zeng

المصدر: IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-7 (2024)

مصطلحات موضوعية: InGaN, LED, photoluminescence (PL), Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/10535223Test/; https://doaj.org/toc/1943-0655Test

الوصول الحر: https://doaj.org/article/211c61e0446f41eb9f9ed35bed4d1319Test

المؤلفون: Hsin-Yu Liu, Donghao Zhang, Zhongying Zhang, Chaohsu Lai, Zongmin Lin, Chia-En Lee, Lijun Bao, Sheng-Po Chang, Shoou-Jinn Chang

المصدر: IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-9 (2024)

مصطلحات موضوعية: MicroLEDs, InGaN/GaN MQWs, V-pits, H $_2$, potential barrier, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/10494520Test/; https://doaj.org/toc/1943-0655Test

الوصول الحر: https://doaj.org/article/0b86e153bc4e4f5aa9e9a4a44c4b0d14Test

المؤلفون: Veeramuthu Vignesh, Yuanpeng Wu, Sung-Un Kim, Jeong-Kyun Oh, Chandran Bagavath, Dae-Young Um, Zetian Mi, Yong-Ho Ra

المصدر: Journal of Information Display, Vol 25, Iss 1, Pp 13-59 (2024)

مصطلحات موضوعية: µ-LED, full-color LED, InGaN nanowires, multi-quantum well (MQW), display technology, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/1598-0316Test; https://doaj.org/toc/2158-1606Test

الوصول الحر: https://doaj.org/article/e3bb466aaff2478b95150f90ec637061Test

المؤلفون: Ha Thanh Tung, My Hanh Nguyen Thi, Nguyen Doan Quoc Anh

المصدر: International Journal of Technology, Vol 15, Iss 1, Pp 8-17 (2024)

مصطلحات موضوعية: blue ingan chips, color rendering index, correlated color temperature, white-light-emitting diodes, Technology, Technology (General), T1-995

وصف الملف: electronic resource

العلاقة: https://ijtech.eng.ui.ac.id/article/view/6165Test; https://doaj.org/toc/2086-9614Test; https://doaj.org/toc/2087-2100Test

الوصول الحر: https://doaj.org/article/bfe1c1b54dc948d28bffa28d27861705Test

المؤلفون: Ou Wei, Mei Yang, Long Hao, Wang Yukun, Yang Tao, Chen Yanhui, Ying Leiying, Zheng Zhongming, Zhang Baoping

المصدر: Nanophotonics, Vol 13, Iss 1, Pp 75-83 (2023)

مصطلحات موضوعية: orthogonal and linear polarization, semipolar ingan, microcavity, Physics, QC1-999

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2192-8614Test

الوصول الحر: https://doaj.org/article/3916ab1a442c49ee8d5c16f9ad45e5e9Test

المؤلفون: Fatimah Alreshidi, Lih-Ren Chen, Mohammed Najmi, Bin Xin, Hadeel Alamoudi, Georgian Melinte, Nimer Wehbe, Daisuke Iida, Kazuhiro Ohkawa, Tien-Chang Lu, Iman S. Roqan

مصطلحات موضوعية: Biophysics, Biochemistry, Physiology, Evolutionary Biology, Ecology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, layers underneath ingan, carrier repopulation process, >- gan layer, >- gan decreases, 402 nm besides, ultrathin subwells formed, strain initially increases, >- gan quality, strain engineering process, pl excitation measurements, gan mqws grown, enhanced efficiency ingan, pit density increases, energy emission centered, strain engineering, pit density, energy emission, ultrathin mqw, optical quality, desired strain, related emission, mqw emission

العلاقة: https://figshare.com/articles/journal_contribution/Enhanced_Efficiency_InGaN_GaN_Multiple_Quantum_Well_Structures_via_Strain_Engineering_and_Ultrathin_Subwells_Formed_by_V_Pit_Sidewalls/24932544Test

الإتاحة: https://doi.org/10.1021/acsaom.3c00406.s001Test
https://figshare.com/articles/journal_contribution/Enhanced_Efficiency_InGaN_GaN_Multiple_Quantum_Well_Structures_via_Strain_Engineering_and_Ultrathin_Subwells_Formed_by_V_Pit_Sidewalls/24932544Test