المؤلفون: Zhe Chuan Feng, Jiamin Liu, Deng Xie, Manika Tun Nafisa, Chuanwei Zhang, Lingyu Wan, Beibei Jiang, Hao-Hsiung Lin, Zhi-Ren Qiu, Weijie Lu, Benjamin Klein, Ian T. Ferguson, Shiyuan Liu

المصدر: Materials, Vol 17, Iss 12, p 2921 (2024)

مصطلحات موضوعية: gallium nitride (GaN), molecular beam epitaxy (MBE), high-resolution X-ray diffraction (HR-XRD), Nomarski microscopy (NM), Raman scattering, photoluminescence (PL), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/1996-1944/17/12/2921Test; https://doaj.org/toc/1996-1944Test

الوصول الحر: https://doaj.org/article/ba9752e518824bcc952da569dc862ff4Test

المؤلفون: Feng, Zhe Chuan, Liu, Jiamin, Xie, Deng, Nafisa, Manika Tun, Zhang, Chuanwei, Wan, Lingyu, Jiang, Beibei, Lin, Hao-Hsiung, Qiu, Zhi-Ren, Lu, Weijie, Klein, Benjamin, Ferguson, Ian T, Liu, Shiyuan

المصدر: Materials (Basel) ; ISSN:1996-1944 ; Volume:17 ; Issue:12

مصطلحات موضوعية: Nomarski microscopy (NM), Raman scattering, Urbach’s binding energy, gallium nitride (GaN), high-resolution X-ray diffraction (HR-XRD), molecular beam epitaxy (MBE), near-edge X-ray absorption fine structure (NEXAFS), photoluminescence (PL), spectroscopic ellipsometry (SE), synchrotron radiation (SR)

العلاقة: https://doi.org/10.3390/ma17122921Test; https://pubmed.ncbi.nlm.nih.gov/38930290Test; https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11205289Test/

الإتاحة: https://doi.org/10.3390/ma17122921Test
https://pubmed.ncbi.nlm.nih.gov/38930290Test
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11205289Test/

المؤلفون: Sun, Jianwu, Kamiyama, Satoshi, Wellmann, Peter, Liljedahl, Rickard, Yakimova, Rositsa, Syväjärvi, Mikael

المصدر: Silicon Carbide and Related Materials 2012 Materials Science Forum. :315-318

مصطلحات موضوعية: 3C-SiC, Carrier Lifetime, High Resolution X-Ray Diffraction (HR-XRD)

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-96511Test

مصطلحات الفهرس: 3C-SiC, Carrier Lifetime, High Resolution X-Ray Diffraction (HR-XRD), Natural Sciences, Naturvetenskap, Conference paper, info:eu-repo/semantics/conferenceObject, text

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-96511Test
Materials Science Forum, 0255-5476 ; 740-742
Silicon Carbide and Related Materials 2012, p. 315-318