المؤلفون: Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra

المصدر: Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)

مصطلحات موضوعية: gallium compounds, high electron mobility transistors, III‐V semiconductors, millimetre wave field effect transistors, power amplifiers, wide band gap semiconductors, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/0013-5194Test; https://doaj.org/toc/1350-911XTest

الوصول الحر: https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56Test

المؤلفون: Lixing Zhang, BeiBei Lv, Xu Ding, Faxin Yu, Jiongjiong Mo

المصدر: Electronics Letters, Vol 60, Iss 10, Pp n/a-n/a (2024)

مصطلحات موضوعية: high electron mobility transistors, high‐temperature electronics, semiconductor device reliability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/0013-5194Test; https://doaj.org/toc/1350-911XTest

الوصول الحر: https://doaj.org/article/e57fedb0321e47cc8c49f9284a30f27eTest

المؤلفون: Paz-Martínez, Gaudencio, Artillan, Philippe, Mateos, Javier, Rochefeuille, Edouard, González, Tomás, Íñiguez-De-La-Torre, Ignacio

المساهمون: Departamento de Fisica Aplicada Salamanca, Universidad de Salamanca, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes (CROMA), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

المصدر: ISSN: 0018-9480 ; IEEE Transactions on Microwave Theory and Techniques ; https://hal.science/hal-04510355Test ; IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (1), pp.415-420. ⟨10.1109/TMTT.2023.3291391⟩.

مصطلحات موضوعية: GaN high-electron-mobility transistors (HEMTs), radio frequency detection, responsivity model, zero-bias detector, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism

العلاقة: hal-04510355; https://hal.science/hal-04510355Test; https://hal.science/hal-04510355/documentTest; https://hal.science/hal-04510355/file/main.pdfTest

الإتاحة: https://doi.org/10.1109/TMTT.2023.3291391Test
https://hal.science/hal-04510355Test
https://hal.science/hal-04510355/documentTest
https://hal.science/hal-04510355/file/main.pdfTest

المؤلفون: Zanoni, Enrico, Santi, Carlo De, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, Pieri, Francesco De, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo', Chini, Alessandro, Verzellesi, Giovanni

المساهمون: Zanoni, Enrico, Santi, Carlo De, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, Pieri, Francesco De, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo', Chini, Alessandro, Verzellesi, Giovanni

مصطلحات موضوعية: Aluminum gallium nitride, Deep level, electron device failure physic, Gallium nitride, gallium nitride high-electron-mobility transistors (GaN HEMT), HEMT scaling, HEMT, Logic gate, Microwave transistor, millimeter wave, reliability, short-channel effect, Silicon, Wide band gap semiconductor

العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:001087462000001; volume:71; issue:3; firstpage:1396; lastpage:1407; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11380/1320426Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85174808819

الإتاحة: https://doi.org/10.1109/TED.2023.3318564Test
https://hdl.handle.net/11380/1320426Test

المؤلفون: Harrysson Rodrigues, Isabel, 1993, Vorobiev, Andrei, 1963

المصدر: IEEE Transactions on Electron Devices. 69(4):1786-1791

مصطلحات موضوعية: Geometrical magnetoresistance (gMR), peak velocity, low-field mobility, lnGaAs/InP, high-field velocity, high-electron mobility transistors (HEMTs)

وصف الملف: electronic

الوصول الحر: https://research.chalmers.se/publication/527738Test
https://research.chalmers.se/publication/528814Test
https://research.chalmers.se/publication/528814/file/528814_Fulltext.pdfTest

المؤلفون: Suriya Shaffi Bhat, Insha Ishteyaq

المصدر: Eurasian Journal of Science and Engineering, Vol 9, Iss 2, Pp 12-24 (2023)

مصطلحات موضوعية: compound semiconductors, rf performance, scaling, field effect transistors, high electron mobility transistors, Science

وصف الملف: electronic resource

العلاقة: https://eajse.tiu.edu.iq/submit/article/review-of-compound-semiconductors-relieving-bottlenecks-of-incessant-mosfet-scaling-heroism-or-a-race-in-the-darkTest; https://doaj.org/toc/2414-5629Test; https://doaj.org/toc/2414-5602Test

الوصول الحر: https://doaj.org/article/c1468a513d184e88ab2a12391c9c9257Test

المؤلفون: Ferrand-Drake Del Castillo, Ragnar, 1993, Chen, Ding Yuan, Chen, J. T., Thorsell, Mattias, 1982, Darakchieva, Vanya, Rorsman, Niklas, 1964

المصدر: IEEE Transactions on Electron Devices. 71(6):3596-3602

مصطلحات موضوعية: short channel effect (SCE), Electrons, AlGaN/GaN, high electron mobility transistors (HEMTs), Logic gates, back-barrier, HEMTs, double heterostructure, Epitaxial growth, Wide band gap semiconductors, Aluminum gallium nitride, MODFETs, dispersion

الوصول الحر: https://research.chalmers.se/publication/541094Test

المؤلفون: Castillo, Ragnar Ferrand Drake Del, Chen, Ding Yuan, Chen, Jr Tai, Thorsell, Mattias, Darakchieva, Vanya, Rorsman, Niklas

المصدر: IEEE Transactions on Electron Devices NanoLund: Centre for Nanoscience. 71(6):3596-3602

مصطلحات موضوعية: AlGaN/GaN, Aluminum gallium nitride, back-barrier, dispersion, double heterostructure, Electrons, Epitaxial growth, HEMTs, high electron mobility transistors (HEMTs), Logic gates, MODFETs, short channel effect (SCE), Wide band gap semiconductors, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

الوصول الحر: https://lup.lub.lu.se/record/210b7968-e6b8-42bb-b01a-d10b21077303Test
http://dx.doi.org/10.1109/TED.2024.3392177Test

المؤلفون: Zhenyang Ma, Dexu Liu, Shun Yuan, Zhaobin Duan, Zhijun Wu

المصدر: Aerospace, Vol 11, Iss 5, p 346 (2024)

مصطلحات موضوعية: aviation nanodevice, double heterojunction, high electron mobility transistors, high-power microwaves, damage mechanism, Motor vehicles. Aeronautics. Astronautics, TL1-4050

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/2226-4310/11/5/346Test; https://doaj.org/toc/2226-4310Test

الوصول الحر: https://doaj.org/article/4dd2ca5897e84bd897cfe06cfc554a03Test

المؤلفون: Haorui Luo, Wenrui Hu, Yongxin Guo

المصدر: Chip, Vol 2, Iss 3, Pp 100052- (2023)

مصطلحات موضوعية: Gallium nitride, High electron mobility transistors, Large-signal model, Information technology, T58.5-58.64

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2709472323000151Test; https://doaj.org/toc/2709-4723Test

الوصول الحر: https://doaj.org/article/9718f7af76d145108070b232a27f92d2Test