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1تقرير
المؤلفون: Du, Y.D., Cao, H.Z., Yan, W., Han, W.H., Liu, Y., Dong, X.Z., Zhang, Y.B., Jin, F., Zhao, Z.S., Yang, F.H., Duan, X.M., Han, W.H.(weihua@semi.ac.cn)
مصطلحات موضوعية: Ablation, Drain Current, Fabrication, Gallium Nitride, High Electron Mobility Transistors, Photoresists, Ultrashort Pulses, 微电子学, lesions, modulation-doped field-effect transistors, sectioning (lesion), scars, 烧蚀, ablation (francais), abtragung, deformation processes, fabricability, fabrication (francais), travail des metaux, verarbeitung, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, hemt
العلاقة: Applied Physics A: Materials Science and Processing; Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M. T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation, Applied Physics A: Materials Science and Processing,2011, ():1-5; http://ir.semi.ac.cn/handle/172111/23064Test
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2تقرير
المؤلفون: Bi, Yang, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yang, Cuibai, Peng, Enchao, Lin, Defeng, Feng, Chun, Jiang, Lijuan, Bi, Y.(ybi@semi.ac.cn)
مصطلحات موضوعية: Aluminum, Electron Mobility, Gallium Nitride, High Electron Mobility Transistors, Indium, Poisson Equation, Polarization, Two Dimensional Electron Gas, 半导体材料, modulation-doped field-effect transistors, boltzmann equation, electromagnetic wave polarisation, electron gas, aluminium, al, aluminium (deutsch), aluminium (francais), electrons--mobility, mobility of electrons, conduction electron mobility, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, hemt
العلاقة: Journal of Semiconductors; Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,.Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure, Journal of Semiconductors,2011,32(8):83003; http://ir.semi.ac.cn/handle/172111/23044Test
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3تقرير
المؤلفون: Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG, Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
مصطلحات موضوعية: Algan/aln/gan, Hemt, Mocvd, Sic Substrate, Power Device, 半导体材料, modulation-doped field-effect transistors, atomic layer deposition, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), atomic layer epitaxial growth
العلاقة: SOLID-STATE ELECTRONICS; Wang XL; Chen TS; Xiao HL; Tang J; Ran JX; Zhang ML; Feng C; Hou QF; Wei M; Jiang LJ; Li JM; Wang ZG .An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application ,SOLID-STATE ELECTRONICS,2009 ,53(3):332-335; http://ir.semi.ac.cn/handle/172111/7265Test
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4تقرير
المؤلفون: Tan XT, Zheng HZ, Liu J, Zhu H, Xu P, Li GR, Yang FH, Zheng HZ Chinese Acad Sci Inst Semicond State Key Microstruct & Superlattices POB 912 Beijing 100083 Peoples R China. E-mail Address: hzzheng@semi.ac.cn
مصطلحات موضوعية: Hemt, 2deg, 半导体材料, modulation-doped field-effect transistors, electron gas, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), 电子气, fermi gas, hole gas, luttinger liquid
العلاقة: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; Tan XT; Zheng HZ; Liu J; Zhu H; Xu P; Li GR; Yang FH .Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2009 ,41(8):1379-1381; http://ir.semi.ac.cn/handle/172111/7065Test
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5تقرير
المؤلفون: Guo, LC, Wang, XL, Wang, CM, Mao, HL, Ran, JX, Luo, WJ, Wang, XY, Wang, BZ, Fang, CB, Hu, GX, Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
مصطلحات موضوعية: Gan, Hemt, 2deg, Mobility, Polarization, 半导体材料, modulation-doped field-effect transistors, electron gas, migration, internal, electromagnetic wave polarisation, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt
العلاقة: MICROELECTRONICS JOURNAL; Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX .The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure ,MICROELECTRONICS JOURNAL,2008 ,39(5): 777-781; http://ir.semi.ac.cn/handle/172111/6626Test
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6تقرير
المؤلفون: Wu, BP, Wu, DH, Ni, HQ, Huang, SS, Zhan, F, Xiong, YH, Xu, YQ, Niu, ZC, Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn
مصطلحات موضوعية: Layers, Surfactant, Substrate, Hemt, Sb, 半导体材料, modulation-doped field-effect transistors, antimony, lamina, plies, 底物, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt
العلاقة: CHINESE PHYSICS LETTERS; Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC .Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2007 ,24(12): 3543-3546; http://ir.semi.ac.cn/handle/172111/6952Test
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7تقرير
المؤلفون: Li DL (Li Dong-Lin), Zeng YP (Zeng Yi-Ping), Li, DL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
مصطلحات موضوعية: Hemt, Heterojunction, Two Dimentional Electron Gas, Self-consistent Calculation, Field-effect Transistor, Transport-properties, Quantum-wells, Hemts, Frequency, Density, 半导体材料, modulation-doped field-effect transistors, transport properties, quantum wells, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors
العلاقة: ACTA PHYSICA SINICA; Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) .Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors ,ACTA PHYSICA SINICA,2006,55(7):3677-3682; http://ir.semi.ac.cn/handle/172111/10524Test
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8تقرير
المؤلفون: Wang XL, Wang CM, Hu GX, Wang JX, Ran JX, Fang CB, Li JP, Zeng YP, Li JM, Liu XY, Liu J, Qian H, Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
مصطلحات موضوعية: Hemt, Gan, Mocvd, Power Device, Field-effect Transistors, Surface Passivation, 半导体材料, modulation-doped field-effect transistors, atomic layer deposition, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics)
العلاقة: SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES; Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H .Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates ,SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES,2005,48(6):808-814; http://ir.semi.ac.cn/handle/172111/10868Test
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9تقرير
المؤلفون: Wang XL, Wang CM, Hu GX, Wang JX, Chen TS, Jiao G, Li JP, Zeng YP, Li JM, Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn, cmwang@red.semi.ac.cn
مصطلحات موضوعية: Hemt, 半导体材料, modulation-doped field-effect transistors, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics)
العلاقة: SOLID-STATE ELECTRONICS; Wang, XL; Wang, CM; Hu, GX; Wang, JX; Chen, TS; Jiao, G; Li, JP; Zeng, YP; Li, JM .Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates ,SOLID-STATE ELECTRONICS,AUG 2005,49 (8):1387-1390; http://ir.semi.ac.cn/handle/172111/8488Test
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10دورية أكاديمية
المؤلفون: Wang, K. C.
المساهمون: ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER
المصدر: DTIC AND NTIS
مصطلحات موضوعية: Electrical and Electronic Equipment, LOW POWER, TUNNELING(ELECTRONICS), SEMICONDUCTOR DIODES, HIGH DENSITY, HIGH POWER, SIMULATION, DIGITAL SYSTEMS, PEAK VALUES, RATIOS, LESSONS LEARNED, DEMONSTRATIONS, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, RESONANCE, HETEROGENEITY, MONOLITHIC STRUCTURES(ELECTRONICS), TRANSISTORS, PVCR(PEAK TO VALLEY CURRENT RATIO), HFET(HETERO FIELD EFFECT TRANSISTORS), PE61101E, WUAFOSRA32300
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