المؤلفون: Abid, Idriss, Mehta, Jash, Cordier, Yvon, Derluyn, Joff, Degroote, Stefan, Miyake, Hideto, Medjdoub, F

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), SOITEC, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), H.M. is partially supported by JSPS KAKENHI Grants (JP16H06415) and JST SICORP-EU (JPMJSC1608)., Renatech Network, PCMP CHOP, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017)

المصدر: ISSN: 2079-9292 ; Electronics ; https://hal.science/hal-03164517Test ; Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩.

مصطلحات موضوعية: Ultra-wide BandGap, HEMTs transistors, [SPI]Engineering Sciences [physics]

العلاقة: info:eu-repo/grantAgreement//720527/EU/Innovative Reliable Nitride-based Power Devices/InRel-NPower; hal-03164517; https://hal.science/hal-03164517Test; https://hal.science/hal-03164517/documentTest; https://hal.science/hal-03164517/file/electronics-10-00635.pdfTest

الإتاحة: https://doi.org/10.3390/electronics10060635Test
https://hal.science/hal-03164517Test
https://hal.science/hal-03164517/documentTest
https://hal.science/hal-03164517/file/electronics-10-00635.pdfTest

المؤلفون: Hideto Miyake, Yvon Cordier, Joff Derluyn, Idriss Abid, Jash Mehta, Farid Medjdoub, Stefan Degroote

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), SOITEC, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), H.M. is partially supported by JSPS KAKENHI Grants (JP16H06415) and JST SICORP-EU (JPMJSC1608)., Renatech Network, PCMP CHOP, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017), Université Nice Sophia Antipolis (... - 2019) (UNS)

المصدر: Electronics
Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, MDPI, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, Vol 10, Iss 635, p 635 (2021)
Volume 10
Issue 6

مصطلحات موضوعية: Materials science, Computer Networks and Communications, Band gap, lcsh:TK7800-8360, high-electron-mobility-transistor (HEMT), 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, HEMTs transistors, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Ultra-wide BandGap, Breakdown voltage, Power semiconductor device, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, Ohmic contact, AlN, 010302 applied physics, AlGaN channel, business.industry, lcsh:Electronics, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Sapphire, Optoelectronics, 0210 nano-technology, business

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ecc06efc9f546559307ce8764bc27fbTest
https://hal.science/hal-03164517/file/electronics-10-00635.pdfTest

المؤلفون: S J Duffy, B Benbakhti, W Zhang, Khaled Ahmeda, K Kalna, M Boucherta, M Mattalah, H O Chahdi, N E Bourzgui, A Soltani

مصطلحات موضوعية: Electronics, sensors and digital hardware not elsewhere classified, AlGaN/GaN high-electron mobility transistors, HEMTs (Transistors), charge trapping, self-heating effects, transient currents

العلاقة: 10779/cardiffmet.19722889.v1; https://figshare.com/articles/journal_contribution/A_Parametric_Technique_for_Traps_Characterization_in_AlGaN_GaN_HEMTs/19722889Test

الإتاحة: https://figshare.com/articles/journal_contribution/A_Parametric_Technique_for_Traps_Characterization_in_AlGaN_GaN_HEMTs/19722889Test

المؤلفون: Du, Y.D., Cao, H.Z., Yan, W., Han, W.H., Liu, Y., Dong, X.Z., Zhang, Y.B., Jin, F., Zhao, Z.S., Yang, F.H., Duan, X.M., Han, W.H.(weihua@semi.ac.cn)

مصطلحات موضوعية: Ablation, Drain Current, Fabrication, Gallium Nitride, High Electron Mobility Transistors, Photoresists, Ultrashort Pulses, 微电子学, lesions, modulation-doped field-effect transistors, sectioning (lesion), scars, 烧蚀, ablation (francais), abtragung, deformation processes, fabricability, fabrication (francais), travail des metaux, verarbeitung, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, hemt

العلاقة: Applied Physics A: Materials Science and Processing; Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M. T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation, Applied Physics A: Materials Science and Processing,2011, ():1-5; http://ir.semi.ac.cn/handle/172111/23064Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/23064Test

المؤلفون: Bi, Yang, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yang, Cuibai, Peng, Enchao, Lin, Defeng, Feng, Chun, Jiang, Lijuan, Bi, Y.(ybi@semi.ac.cn)

مصطلحات موضوعية: Aluminum, Electron Mobility, Gallium Nitride, High Electron Mobility Transistors, Indium, Poisson Equation, Polarization, Two Dimensional Electron Gas, 半导体材料, modulation-doped field-effect transistors, boltzmann equation, electromagnetic wave polarisation, electron gas, aluminium, al, aluminium (deutsch), aluminium (francais), electrons--mobility, mobility of electrons, conduction electron mobility, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, hemt

العلاقة: Journal of Semiconductors; Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,.Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure, Journal of Semiconductors,2011,32(8):83003; http://ir.semi.ac.cn/handle/172111/23044Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/23044Test

المؤلفون: Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG, Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn

مصطلحات موضوعية: Algan/aln/gan, Hemt, Mocvd, Sic Substrate, Power Device, 半导体材料, modulation-doped field-effect transistors, atomic layer deposition, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), atomic layer epitaxial growth

العلاقة: SOLID-STATE ELECTRONICS; Wang XL; Chen TS; Xiao HL; Tang J; Ran JX; Zhang ML; Feng C; Hou QF; Wei M; Jiang LJ; Li JM; Wang ZG .An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application ,SOLID-STATE ELECTRONICS,2009 ,53(3):332-335; http://ir.semi.ac.cn/handle/172111/7265Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7265Test

المؤلفون: Tan XT, Zheng HZ, Liu J, Zhu H, Xu P, Li GR, Yang FH, Zheng HZ Chinese Acad Sci Inst Semicond State Key Microstruct & Superlattices POB 912 Beijing 100083 Peoples R China. E-mail Address: hzzheng@semi.ac.cn

مصطلحات موضوعية: Hemt, 2deg, 半导体材料, modulation-doped field-effect transistors, electron gas, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), 电子气, fermi gas, hole gas, luttinger liquid

العلاقة: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; Tan XT; Zheng HZ; Liu J; Zhu H; Xu P; Li GR; Yang FH .Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2009 ,41(8):1379-1381; http://ir.semi.ac.cn/handle/172111/7065Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7065Test

المؤلفون: Guo, LC, Wang, XL, Wang, CM, Mao, HL, Ran, JX, Luo, WJ, Wang, XY, Wang, BZ, Fang, CB, Hu, GX, Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn

مصطلحات موضوعية: Gan, Hemt, 2deg, Mobility, Polarization, 半导体材料, modulation-doped field-effect transistors, electron gas, migration, internal, electromagnetic wave polarisation, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt

العلاقة: MICROELECTRONICS JOURNAL; Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX .The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure ,MICROELECTRONICS JOURNAL,2008 ,39(5): 777-781; http://ir.semi.ac.cn/handle/172111/6626Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6626Test

المؤلفون: Wu, BP, Wu, DH, Ni, HQ, Huang, SS, Zhan, F, Xiong, YH, Xu, YQ, Niu, ZC, Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn

مصطلحات موضوعية: Layers, Surfactant, Substrate, Hemt, Sb, 半导体材料, modulation-doped field-effect transistors, antimony, lamina, plies, 底物, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt

العلاقة: CHINESE PHYSICS LETTERS; Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC .Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2007 ,24(12): 3543-3546; http://ir.semi.ac.cn/handle/172111/6952Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6952Test

المؤلفون: Li DL (Li Dong-Lin), Zeng YP (Zeng Yi-Ping), Li, DL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Hemt, Heterojunction, Two Dimentional Electron Gas, Self-consistent Calculation, Field-effect Transistor, Transport-properties, Quantum-wells, Hemts, Frequency, Density, 半导体材料, modulation-doped field-effect transistors, transport properties, quantum wells, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors

العلاقة: ACTA PHYSICA SINICA; Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) .Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors ,ACTA PHYSICA SINICA,2006,55(7):3677-3682; http://ir.semi.ac.cn/handle/172111/10524Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10524Test