المؤلفون: Liming Wang, Ying Zhu, Rui-Tao Wen, Guangrui Xia

مصطلحات موضوعية: Medicine, Cell Biology, Neuroscience, Biotechnology, Sociology, Inorganic Chemistry, Plasma Physics, Infectious Diseases, Plant Biology, Virology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, multijunction solar cells, enables future studies, etch 535 μm, thinnest ge film, 2 , based optical devices, wet etching method, ge substrates via, defect density ge, hcl – h, defect density, based devices, ge via, ge substrates, optical detectors, etching rate

العلاقة: https://figshare.com/articles/journal_contribution/Sub-10_m-Thick_Ge_Thin_Film_Fabrication_from_Bulk-Ge_Substrates_via_a_Wet_Etching_Method/24797403Test

الإتاحة: https://doi.org/10.1021/acsomega.3c07490.s001Test
https://figshare.com/articles/journal_contribution/Sub-10_m-Thick_Ge_Thin_Film_Fabrication_from_Bulk-Ge_Substrates_via_a_Wet_Etching_Method/24797403Test

المؤلفون: R Zarei Moghadam, M H Ehsani, H Rezagholipour Dizaji, P Kameli, M Jannesari

المصدر: Materials Research Express, Vol 8, Iss 3, p 035601 (2021)

مصطلحات موضوعية: hydrophilicity, Ge substrates, direct ion beam, O2-DLC films, Raman spectroscopy, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

العلاقة: https://doi.org/10.1088/2053-1591/abeac9Test; https://doaj.org/toc/2053-1591Test; https://doaj.org/article/8a881dd957a34bd88729e2856e59a772Test

الإتاحة: https://doi.org/10.1088/2053-1591/abeac9Test
https://doaj.org/article/8a881dd957a34bd88729e2856e59a772Test

المؤلفون: Lladós Cos, Òscar

المساهمون: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, López Rodríguez, Gema, Martín García, Isidro

المصدر: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

مصطلحات موضوعية: contact resistivity, surface recombination velocity, hole selective contacts, Física [Àrees temàtiques de la UPC], thermophotovoltaic, Quantum theory, c-Ge substrates, contact selectivity, Quàntums, Teoria dels, TMO

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3b34455898b5f2f80185c30d83210f0dTest
https://hdl.handle.net/2117/353284Test

المؤلفون: Gianluigi Maggioni, Walter Raniero, D. De Salvador, Virginia Boldrini, Enrico Napolitani, Francesco Sgarbossa, D. R. Napoli, Sara Carturan

مصطلحات موضوعية: Ge surfaces, Secondary ion mass spectrometry, Materials science, Annealing (metallurgy), Analytical chemistry, Ge substrates, chemistry.chemical_element, Germanium, Doping (additives), Mass spectrometry, Radiation detectors, Silicon wafers, Sputtering, Surface defects, Surface morphology, Defect-free surfaces, Diffusion annealing, Diffusion model, Diffusion profiles, Dopant sources, Ge wafer, Diffusion, Antimony diffusion, 02 engineering and technology, 01 natural sciences, Diffusion, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Wafer, 010302 applied physics, Dopant, Mechanical Engineering, Doping, Defect-free surfaces, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, 0210 nano-technology, Surface morphology, Ge wafer

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75ebc285c4584a4874205b1141e54b7dTest
http://hdl.handle.net/11577/3251035Test

المؤلفون: Liu Hongxi, 山本 眞史, 平 智幸, 李 桂芳, 松田 健一, 植村 哲也

المصدر: JSAP Annual Meetings Extended Abstracts. 2012, :2041

المؤلفون: Pillet, Jean-Christophe, Pierre, Fabrice, Jalabert, Denis

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

المصدر: ISSN: 0168-583X.

مصطلحات موضوعية: CdTe, Ge Substrates, MEIS, Channeling, Blocking, Molecular-Beam Epitaxy, Heteroepitaxy, [PHYS]Physics [physics]

العلاقة: cea-01851571; https://cea.hal.science/cea-01851571Test

الإتاحة: https://doi.org/10.1016/j.nimb.2016.07.020Test
https://cea.hal.science/cea-01851571Test

المؤلفون: J.C. Pillet, D. Jalabert, F. Pierre

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2016, 384, pp.1-5. ⟨10.1016/j.nimb.2016.07.020⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 384, pp.1-5. ⟨10.1016/j.nimb.2016.07.020⟩

مصطلحات موضوعية: Diffraction, Nuclear and High Energy Physics, Materials science, 02 engineering and technology, Epitaxy, 01 natural sciences, Molecular physics, Ion, Lattice (order), 0103 physical sciences, Instrumentation, Channeling, 010302 applied physics, [PHYS]Physics [physics], Scattering, Heterojunction, CdTe, 021001 nanoscience & nanotechnology, Cadmium telluride photovoltaics, Heteroepitaxy, Blocking, Crystallography, Ge Substrates, Molecular-Beam Epitaxy, Nanometre, 0210 nano-technology, MEIS

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5a5ab35aa6195a9da6ded345e0cd2bcTest
https://hal-cea.archives-ouvertes.fr/cea-01851571Test

المؤلفون: Henkel, Christoph, Hellström, Per-Erik, Östling, Mikael, Bethge, O., Stöger-Pollach, M., Bertagnolli, E.

المصدر: European Solid-State Device Res. Conf. European Solid-State Device Research Conference. :75-78

مصطلحات موضوعية: Cap layers, Device structures, Equivalent oxide thickness, Gate stacks, Ge substrates, Germanium surface, High-k dielectric, Interface trap density, Interfacial layer, Multi-layered, Oxidation and reduction, Oxidation time, Reduction treatment, Surface passivation, Atomic layer deposition, Gate dielectrics, Germanium, Lanthanum oxides, Logic gates, MOSFET devices, Platinum, Solid state devices, Zirconium alloys, Electric properties

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-150653Test

المؤلفون: E. K. Evangelou, S. Galata, A. Dimoulas, Iosif Androulidakis, G. Mavrou, M. S. Rahman

المصدر: Solid-State Electronics. 54:979-984

مصطلحات موضوعية: charge trapping, ge substrates, time-decay, Dielectric, Trapping, dielectric relaxation, Capacitance, Electric charge, trap generation, stacks, Stress (mechanics), silc, cvs, relaxation, Materials Chemistry, oxide-films, Electrical and Electronic Engineering, breakdown, Condensed matter physics, business.industry, Chemistry, Relaxation (NMR), Electrical engineering, hfo2, rare-earth oxides, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, defects generation, la(2)o(3), induced leakage current, electron injection, interface, SILC, business, Voltage

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4886cd329d6a3a5a457239d7bf407d7bTest
https://doi.org/10.1016/j.sse.2010.04.023Test

المؤلفون: Colace, Bronzoni, De Iacovo, Frigeri, Gombia, Maragliano, Mezzadri, Nasi, Pattini, Rampino, Seravalli, Trevisi

المصدر: 2014 Fotonica AEIT Italian Conference on Photonics Technologies, pp. 1–4, Napoli, 12-14 Maggio 2014
info:cnr-pdr/source/autori:Colace, L. and Bronzoni, M. and De Iacovo, A. and Frigeri, P. and Gombia, E. and Maragliano, C. and Mezzadri, F. and Nasi, L. and Pattini, F. and Rampino, S. and Seravalli, L. and Trevisi, G./congresso_nome:2014 Fotonica AEIT Italian Conference on Photonics Technologies/congresso_luogo:Napoli/congresso_data:12-14 Maggio 2014/anno:2014/pagina_da:1/pagina_a:4/intervallo_pagine:1–4

مصطلحات موضوعية: copper compounds, electron beam deposition, Ge, temperature 300 degC, transmission electron microscopy, Radio frequency, Epitaxial growth, multijunction thin film solar cells, single-crystal thin films, smooth interface, Microscopy, vapour phase epitaxial growth, thin film solar cells, epitaxial CIGS, Photovoltaic cells, Coils, semiconductor epitaxial layers, CIGS, absorber layer, CuIn1-xGaxSe2, X-ray diffraction, semiconductor growth, indium compounds, n-type Ge substrates, Electric potential, low-temperature epitaxy, lattice-matched Ge, low-temperature pulsed electron deposition, epilayers, single junction thin film solar cells, photoluminescence, ternary semiconductors, gallium compounds

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=cnr_________::5cc7a73cd53548356296e95b728b7d0eTest