-
1دورية أكاديمية
المؤلفون: Talwar, Devki N., Lin, Hao Hsiung, Feng, Zhe Chuan
المصدر: UNF Faculty Publications
مصطلحات موضوعية: gas-source MBE, Green's function theory, localized vibrational modes, plasmon-LO-phonon coupled mode, Si-doped InAs
العلاقة: https://digitalcommons.unf.edu/unf_faculty_publications/793Test; https://doi.org/10.1002/jrs.5703Test
الإتاحة: https://doi.org/10.1002/jrs.5703Test
https://digitalcommons.unf.edu/unf_faculty_publications/793Test -
2تقرير
المؤلفون: Li MF(李密锋)
مصطلحات موضوعية: Inas Quantum Dots, Sacrificed Inas Layer, Molecular Beam Epitaxy, Reflection High-energy Electron, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: Nanoscale Research Letters; 李密锋.In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.Nanoscale Research Letters,2013,8(1):86; http://ir.semi.ac.cn/handle/172111/24136Test
-
3تقرير
مصطلحات موضوعية: Branched Nanowires, Self-catalyzed, Gallium-droplets (Gds) Seeds, Epitaxy, Mbe, 半导体材料, atomic layer deposition, epitaxial growth, solid phase epitaxial growth, solid phase epitaxy, spe, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration
العلاقة: APPLIED PHYSICS LETTERS; Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni and Zhichuan Niu.Strain-driven synthesis of self-catalyzed branched GaAs nanowires.APPLIED PHYSICS LETTERS,2013,102(16):163115; http://ir.semi.ac.cn/handle/172111/24153Test
-
4تقرير
المؤلفون: Zhu, Yan, Ni, Hai-qiao, Wang, Hai-li, He, Ji-fang, Li, Mi-feng, Shang, Xiang-jun, Niu, Zhi-chuan, Zhu, Y.(ttcow@126.com)
مصطلحات موضوعية: Epitaxial Growth, Gallium Arsenide, Growth(Materials), Molecular Beam Epitaxy, Semiconducting Gallium, Semiconducting Indium, Semiconductor Quantum Wells, 半导体物理, epitaxy, atomic layer deposition, quantum well devices, solid phase epitaxial growth, solid phase epitaxy, spe, gaas, arseniures de gallium, galliumarsenid, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: Optoelectronics Letters; Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, Optoelectronics Letters,2011,7(5):325-329; http://ir.semi.ac.cn/handle/172111/23052Test
-
5تقرير
مصطلحات موضوعية: Atomic Force Microscopy, Gallium Nitride, Molecular Beam Epitaxy, Optical Materials, Optical Properties, Reflection High Energy Electron Diffraction, Sapphire, 半导体材料, atomic layer deposition, aluminum oxide, afm (microscopy), afm, scanning force microscopy, atomic force microscope, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd
العلاقة: Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering; Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang.Structures and optical characteristics of InGaN quantum dots grown by MBE, Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,2011,40(11):2030-2032; http://ir.semi.ac.cn/handle/172111/23043Test
-
6تقرير
المؤلفون: Wang, W, Su, SJ, Zheng, J, Zhang, GZ, Zuo, YH, Cheng, BW, Wang, QM, Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,cbw@semi.ac.cn
مصطلحات موضوعية: Gesn Alloys, Strained, Strain-relaxed, Molecular Beam Epitaxy, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: CHINESE PHYSICS B; Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM.Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates,CHINESE PHYSICS B,2011,20(6):68103; http://ir.semi.ac.cn/handle/172111/22867Test
-
7تقرير
المؤلفون: Liang S, Kong DH, Zhu HL, Wang W, Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, liangsong@red.semi.ac.cn
مصطلحات موضوعية: Chemical-vapor-deposition, Molecular-beam Epitaxy, Quantum Dots, Surface Migration, Fabrication, Gaas(100), Islands, Wires, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, wire rope, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe
العلاقة: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS; Liang S; Kong DH; Zhu HL; Wang W.Growth Simulations of Self-Assembled Nanowires on Stepped Substrates,IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2011,17(4):960-965; http://ir.semi.ac.cn/handle/172111/22775Test
-
8تقرير
المؤلفون: Pan X, Wang XL, Xiao HL, Wang CM, Feng C, Jiang LJ, Yin HB, Chen H, Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Field-effect Transistors, Vapor-phase Epitaxy, Group-iii Nitrides, Inversion Domains, High-temperature, Gan, Si(111), Aln, Sapphire, 半导体材料, atomic layer deposition, vapor phase epitaxy, high temperature, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H.Surface characterization of AlGaN grown on Si (111) substrates,JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32; http://ir.semi.ac.cn/handle/172111/22661Test
-
9تقرير
المؤلفون: Wei, M, Wang, XL, Pan, X, Xiao, HL, Wang, CM, Hou, QF, Wang, ZG, Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn
مصطلحات موضوعية: Gan, Mocvd, Si(111), Aln, Vapor-phase Epitaxy, Layers, Substrate, Stress, 半导体材料, atomic layer deposition, vapor phase epitaxy, residual stresses, stress (mechanics), photoelasticity, thermal stresses, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd
العلاقة: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG.Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1),MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):97-100; http://ir.semi.ac.cn/handle/172111/22655Test
-
10تقرير
المؤلفون: Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Inversion Asymmetry, Heterostructures, Segregation, Interface, 半导体材料, atomic layer deposition, separation, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF APPLIED PHYSICS; Yu JL; Chen YH; Jiang CY; Liu Y; Ma H.Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.53519; http://ir.semi.ac.cn/handle/172111/21277Test