المؤلفون: Niskanen, Kimmo, Kettunen, Heikki, Söderström, Daniel, Rossi, Mikko, Jaatinen, Jukka, Javanainen, Arto

مصطلحات موضوعية: logic gates, radiation effects, protons, silicon carbide, reliability, stress, elektroniikkakomponentit, ionisoiva säteily, säteilyfysiikka, transistorit, protonit

وصف الملف: application/pdf; 1838-1843; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 70; Niskanen, K., Kettunen, H., Söderström, D., Rossi, M., Jaatinen, J., & Javanainen, A. (2023). Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET. IEEE Transactions on Nuclear Science , 70 (8), 1838-1843. https://doi.org/10.1109/tns.2023.3242829Test; CONVID_176845642; URN:NBN:fi:jyu-202302091694; http://urn.fi/URN:NBN:fi:jyu-202302091694Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202302091694Test

المؤلفون: Geng, Zhuoran, Hijano, Alberto, Ilic, Stefan, Ilin, Maxim, Maasilta, Ilari J., Monfardini, Alessandro, Spies, Maria, Strambini, Elia, Virtanen, Pauli, Calvo, Martino, González-Orellána, Carmen, Helenius, Ari P., Khorshidian, Sara, Levartoski de Araujo, Clodoaldo Irineu, Levy-Bertrand, Florence, Rogero, Celia, Giazotto, Francesco, Bergeret, F. Sebastian, Heikkilä, Tero T.

مصطلحات موضوعية: suprajohteet, ohutkalvot, elektroniikkakomponentit, ilmaisimet

وصف الملف: application/pdf; fulltext

العلاقة: Superconductor Science and Technology; 12; 36; 800923; info:eu-repo/grantAgreement/EC/H2020/800923/EU//SUPERTED; European Commission; Euroopan komissio; Geng, Z., Hijano, A., Ilic, S., Ilin, M., Maasilta, I. J., Monfardini, A., Spies, M., Strambini, E., Virtanen, P., Calvo, M., González-Orellána, C., Helenius, A. P., Khorshidian, S., Levartoski de Araujo, C. I., Levy-Bertrand, F., Rogero, C., Giazotto, F., Bergeret, F. S., & Heikkilä, T. T. (2023). Superconductor-ferromagnet hybrids for non-reciprocal electronics and detectors. Superconductor Science and Technology , 36 (12), Article 123001. https://doi.org/10.1088/1361-6668/ad01e9Test; CONVID_193429937; URN:NBN:fi:jyu-202402061748; http://urn.fi/URN:NBN:fi:jyu-202402061748Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202402061748Test

المؤلفون: Lüdeke, Sascha, Cardenas, Gabriel Duran, Hajdas, Wojtek, Jaatinen, Jukka, Kettunen, Heikki, Poivey, Christian, Rossi, Mikko, Tanios, Bendy, Vogiatzi Stergiani, Marina, Javanainen, Arto

مصطلحات موضوعية: protons, particle beams, lattices, radiation effects, performance evaluation, random access memory, sensitivity, protonit, testausmenetelmät, säteilyfysiikka, elektroniikkakomponentit, käyttömuistit, ionisoiva säteily

وصف الملف: application/pdf; 667-677; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 70; 721624; 4000130439/20/NL/KML; info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA; European Commission; European Space Agency; Euroopan komissio; Lüdeke, S., Cardenas, G. D., Hajdas, W., Jaatinen, J., Kettunen, H., Poivey, C., Rossi, M., Tanios, B., Vogiatzi Stergiani, M., & Javanainen, A. (2023). Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling. IEEE Transactions on Nuclear Science , 70 (4), 667-677. https://doi.org/10.1109/tns.2023.3255008Test; CONVID_177402507; URN:NBN:fi:jyu-202303202194; http://urn.fi/URN:NBN:fi:jyu-202303202194Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202303202194Test

المؤلفون: Martinella, Corinna, Bathen, Marianne, Javanainen, Arto, Grossner, Ulrike

مصطلحات موضوعية: ionisoiva säteily, transistorit, elektroniikkakomponentit, säteilyfysiikka, puolijohteet

وصف الملف: application/pdf; 179-184; fulltext

العلاقة: Materials Science Forum; 1090; Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum , 1090 , 179-184. https://doi.org/10.4028/p-3y3lv4Test; CONVID_183718040; URN:NBN:fi:jyu-202307064411; http://urn.fi/URN:NBN:fi:jyu-202307064411Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202307064411Test

المؤلفون: Niskanen, Kimmo, Kettunen, Heikki, Lahti, Mikko, Rossi, Mikko, Jaatinen, Jukka, Söderström, Daniel, Javanainen, Arto

مصطلحات موضوعية: logic gates, silicon carbide, stress, electric breakdown, radiation effects, MOSFET, degradation, transistorit, elektronit, elektroniikkakomponentit, säteilyfysiikka, ionisoiva säteily

وصف الملف: application/pdf; 456-461; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 70; Niskanen, K., Kettunen, H., Lahti, M., Rossi, M., Jaatinen, J., Söderström, D., & Javanainen, A. (2023). Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs. IEEE Transactions on Nuclear Science , 70 (4), 456-461. https://doi.org/10.1109/tns.2023.3242335Test; CONVID_176805188; URN:NBN:fi:jyu-202302081679; http://urn.fi/URN:NBN:fi:jyu-202302081679Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202302081679Test

المؤلفون: Roed, Ketil, Eriksen, Dag Oistein, Ceccaroli, Bruno, Martinella, Corinna, Javanainen, Arto, Reshanov, Sergey, Massetti, Silvia

مصطلحات موضوعية: Schottky diodes, silicon carbide, monoisotopic, heavy ion irradiation, single event effects, single event burnout, leakage current degradation, diodit, elektroniikkakomponentit, ionisoiva säteily, puolijohteet, säteilyfysiikka

وصف الملف: application/pdf; 1675-1682; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 69; Roed, K., Eriksen, D. O., Ceccaroli, B., Martinella, C., Javanainen, A., Reshanov, S., & Massetti, S. (2022). Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation. IEEE Transactions on Nuclear Science , 69 (7), 1675-1682. https://doi.org/10.1109/tns.2022.3173061Test; CONVID_144288263; URN:NBN:fi:jyu-202205162714; http://urn.fi/URN:NBN:fi:jyu-202205162714Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202205162714Test

المؤلفون: Martinella, C., Natzke, P., Alia, R.G., Kadi, Y., Niskanen, K., Rossi, M., Jaatinen, J., Kettunen, H., Tsibizov, A., Grossner, U., Javanainen, A.

مصطلحات موضوعية: SiC MOSFETs, Heavy-ion, Latent damage, SEEs, säteilyfysiikka, ionisoiva säteily, transistorit, puolijohteet, elektroniikkakomponentit

وصف الملف: application/pdf; fulltext

العلاقة: Microelectronics Reliability; 128; Martinella, C., Natzke, P., Alia, R.G., Kadi, Y., Niskanen, K., Rossi, M., Jaatinen, J., Kettunen, H., Tsibizov, A., Grossner, U., & Javanainen, A. (2022). Heavy-ion induced single event effects and latent damages in SiC power MOSFETs. Microelectronics Reliability , 128 , Article 114423. https://doi.org/10.1016/j.microrel.2021.114423Test; CONVID_102272593; URN:NBN:fi:jyu-202112015846; http://urn.fi/URN:NBN:fi:jyu-202112015846Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202112015846Test

المؤلفون: Matana, Luza Lucas, Söderström, Daniel, Puchner, Helmut, Alía, Rubén García, Letiche, Manon, Cazzaniga, Carlo, Bosio, Alberto, Dilillo, Luigi

مصطلحات موضوعية: Neutron, Self-refresh, DRAM, SEE, Stuck bits, HyperRAM, neutronit, hiukkassäteily, elektroniikkakomponentit, säteilyfysiikka, käyttömuistit

وصف الملف: application/pdf; fulltext

العلاقة: Microelectronics Reliability; 128; 721624; info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA; European Commission; Euroopan komissio; Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability , 128 , Article 114406. https://doi.org/10.1016/j.microrel.2021.114406Test; CONVID_102276074; URN:NBN:fi:jyu-202211285381; http://urn.fi/URN:NBN:fi:jyu-202211285381Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202211285381Test

المؤلفون: Söderström, Daniel, Matana Luza, Lucas, Kettunen, Heikki, Javanainen, Arto, Farabolini, Wilfrid, Gilardi, Antonio, Coronetti, Andrea, Poivey, Christian, Dilillo, Luigi

مصطلحات موضوعية: electron radiation, radiation effects, single event upsets, stuck bits, total ionizing dose, avaruustekniikka, ionisoiva säteily, käyttömuistit, elektroniikkakomponentit, säteilyfysiikka, elektronit

وصف الملف: application/pdf; 716-723; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 68; 721624; info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA; European Commission; Euroopan komissio; Söderström, D., Matana Luza, L., Kettunen, H., Javanainen, A., Farabolini, W., Gilardi, A., Coronetti, A., Poivey, C., & Dilillo, L. (2021). Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment. IEEE Transactions on Nuclear Science , 68 (5), 716-723. https://doi.org/10.1109/tns.2021.3068186Test; CONVID_52579236; URN:NBN:fi:jyu-202104232475; http://urn.fi/URN:NBN:fi:jyu-202104232475Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202104232475Test

المؤلفون: Coronetti, Andrea, Alia Garcia, Ruben, Cerutti, Francesco, Hajdas, Wojtek, Söderström, Daniel, Javanainen, Arto, Saigne, Frederic

مصطلحات موضوعية: pions, protons, neutrons, accelerator, SEL, cross-section, radiation hardness assurance, FLUKA, nuclear interactions, pii, ionisoiva säteily, hiukkaskiihdyttimet, elektroniikkakomponentit, protonit, säteilyfysiikka

وصف الملف: application/pdf; 1613-1622; fulltext

العلاقة: IEEE Transactions on Nuclear Science; 68; 721624; info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA; European Commission; Euroopan komissio; Coronetti, A., Alia Garcia, R., Cerutti, F., Hajdas, W., Söderström, D., Javanainen, A., & Saigne, F. (2021). The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance. IEEE Transactions on Nuclear Science , 68 (8), 1613-1622. https://doi.org/10.1109/TNS.2021.3070216Test; CONVID_52673985; URN:NBN:fi:jyu-202104072292; http://urn.fi/URN:NBN:fi:jyu-202104072292Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-202104072292Test