المؤلفون: Maksimovic, Jovan, Mu, Haoran, Smith, Daniel, Katkus, Tomas, Vaičiulis, Mantas, Aleksiejūnas, Ramūnas, Seniutinas, Gediminas, Ng, Soon Hock, Juodkazis, Saulius

المصدر: Micromachines., Basel : MDPI, 2023, vol. 14, iss. 3, art. no. 550, p. [1-14]. ; eISSN 2072-666X

مصطلحات موضوعية: ablation, dry etch, Lambertian limit, light trapping, Si solar cells

وصف الملف: application/pdf

العلاقة: https://epublications.vu.lt/object/elaba:186309497/186309497.pdfTest; https://repository.vu.lt/VU:ELABAPDB186309497&prefLang=en_USTest

الإتاحة: https://doi.org/10.3390/mi14030550Test
https://repository.vu.lt/VU:ELABAPDB186309497&prefLang=en_USTest

المؤلفون: Lei Jin, Zhuorui Tang, Long Chen, Guijiu Xie, Zhanglong Chen, Wei Wei, Jianghua Fan, Xiaoliang Gong, Ming Zhang

المصدر: Electronics; Volume 12; Issue 11; Pages: 2385

مصطلحات موضوعية: silicon device, trench morphology, sidewall modification, dry etch

وصف الملف: application/pdf

العلاقة: Optoelectronics; https://dx.doi.org/10.3390/electronics12112385Test

الإتاحة: https://doi.org/10.3390/electronics12112385Test

المؤلفون: Jovan Maksimovic, Haoran Mu, Daniel Smith, Tomas Katkus, Mantas Vaičiulis, Ramūnas Aleksiejūnas, Gediminas Seniutinas, Soon Hock Ng, Saulius Juodkazis

المصدر: Micromachines; Volume 14; Issue 3; Pages: 550

مصطلحات موضوعية: light trapping, Si solar cells, ablation, dry etch, Lambertian limit

وصف الملف: application/pdf

العلاقة: A：Physics; https://dx.doi.org/10.3390/mi14030550Test

الإتاحة: https://doi.org/10.3390/mi14030550Test

المؤلفون: Xin Sun, Dawei Wang, Lewen Qian, Tao Liu, Jingwen Yang, Kun Chen, Luyu Wang, Ziqiang Huang, Min Xu, Chen Wang, Chunlei Wu, Saisheng Xu, David Wei Zhang

المصدر: Nanomaterials; Volume 13; Issue 3; Pages: 504

مصطلحات موضوعية: nanosheet, gate-all-around, transistor, channel release, isotropic dry etch, high selectivity, deformation, plasma-free

وصف الملف: application/pdf

العلاقة: Nanofabrication and Nanomanufacturing; https://dx.doi.org/10.3390/nano13030504Test

الإتاحة: https://doi.org/10.3390/nano13030504Test

المؤلفون: Yu Zhao, Taku Iwase, Makoto Satake, Hirotaka Hamamura

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1112-1116 (2021)

مصطلحات موضوعية: Etch front, GAA-FET, isotropic etch, dry etch, selective SiGe etch, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/9627731Test/; https://doaj.org/toc/2168-6734Test

الوصول الحر: https://doaj.org/article/ea5a82be803e4342a9f01ba6cc9d76d2Test

المؤلفون: Zheng Jiang, Hao Zhu, Qingqing Sun

المصدر: Electronics; Volume 10; Issue 12; Pages: 1374

مصطلحات موضوعية: dry etch, PECVD, hard mask, ACHM, 3D-NAND

وصف الملف: application/pdf

العلاقة: Microelectronics; https://dx.doi.org/10.3390/electronics10121374Test

الإتاحة: https://doi.org/10.3390/electronics10121374Test

المؤلفون: Ho-Won Yoon, Seung-Min Shin, Seong-Yong Kwon, Hyun-Min Cho, Sang-Gab Kim, Mun-Pyo Hong

المصدر: Materials; Volume 14; Issue 8; Pages: 2025

مصطلحات موضوعية: ITO/Ag/ITO multilayer, one-step dry etch, H 2 /HCl gas, ECR-RIE, TE-OLED

وصف الملف: application/pdf

العلاقة: Manufacturing Processes and Systems; https://dx.doi.org/10.3390/ma14082025Test

الإتاحة: https://doi.org/10.3390/ma14082025Test

المؤلفون: Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang

المصدر: Nanomaterials; Volume 10; Issue 4; Pages: 657

مصطلحات موضوعية: GaN, inductively coupled plasma (ICP), mesa, sidewall profile, quasi-vertical, Schottky barrier diode (SBD), dry etch

وصف الملف: application/pdf

العلاقة: https://dx.doi.org/10.3390/nano10040657Test

الإتاحة: https://doi.org/10.3390/nano10040657Test

المؤلفون: Mahsa Madadi Masouleh, Reza Askari Moghadam, Javad Koohsorkhi

المصدر: Materials Research Express, Vol 7, Iss 2, p 025018 (2020)

مصطلحات موضوعية: micro/nano fiber, near field electrospinning, mems strucures, microneedle array, dry etch, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

العلاقة: https://doi.org/10.1088/2053-1591/ab6f3dTest; https://doaj.org/toc/2053-1591Test; https://doaj.org/article/b1c7556356be4c4c9e75540f2b2b4b70Test

الإتاحة: https://doi.org/10.1088/2053-1591/ab6f3dTest
https://doaj.org/article/b1c7556356be4c4c9e75540f2b2b4b70Test

المؤلفون: Herrmann, Eric, Wang, Xi

مصطلحات موضوعية: angled sidewalls, dry etch, nanocones, silica, silicon oxide, single-mask

وصف الملف: application/pdf

العلاقة: E. Herrmann and X. Wang, "Single-Mask Fabrication of Sharp SiOx Nanocones," in IEEE Transactions on Semiconductor Manufacturing, vol. 37, no. 1, pp. 87-92, Feb. 2024, doi:10.1109/TSM.2023.3336169.; https://udspace.udel.edu/handle/19716/34099Test

الإتاحة: https://doi.org/10.1109/TSM.2023.3336169Test
https://udspace.udel.edu/handle/19716/34099Test