المؤلفون: den Daele W., Van, Augendre, E., Royer C., Le, J.-F., Damlencourt, Grandchamp, B., Cristoloveanu, S.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-00596353Test ; Solid-State Electronics, 2010, 54 (2), pp.205-212.

مصطلحات موضوعية: [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

العلاقة: hal-00596353; https://hal.science/hal-00596353Test

الإتاحة: https://hal.science/hal-00596353Test

المؤلفون: Pham-Nguyen, L., Fenouillet-Beranger, C., Perreau, P., Denorme, S., Ghibaudo, G., Faynot, O., Skotnicki, T., Ohata, A., Casse, M., Ionica, I., Den Daele, W. Van, Park, K.-h., Chang, S.-j., Bae, Y.-h., Bawedin, M., Cristoloveanu, S.

المصدر: Frontiers in Electronics - Proceedings of the Workshop on Frontiers in Electronics 2009; 2013, p81-93, 13p

مصطلحات موضوعية: SILICON-on-insulator metal oxide semiconductor field-effect transistors, MOBILITY (Structural dynamics), HIGH-k dielectric thin films, STRAIN rate, COMPLEMENTARY metal oxide semiconductors