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1دورية أكاديمية
المؤلفون: Holston, Maurio S., Golden, Eric M., Kananen, Brant E., McClory, John W., Giles, Nancy C., Halliburton, Larry E.
المصدر: Faculty Publications
مصطلحات موضوعية: EPR-active state, II-VI semiconductors, ZnO, angular dependence, Crystal growth from vapour, Defect states, Atomic, Molecular and Optical Physics, Semiconductor and Optical Materials
وصف الملف: application/pdf
العلاقة: https://scholar.afit.edu/facpub/709Test; https://scholar.afit.edu/context/facpub/article/1723/viewcontent/1.4945703.pdfTest
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2دورية أكاديمية
المؤلفون: Kayes, Brendan M., Filler, Michael A., Putnam, Morgan C., Kelzenberg, Michael D., Lewis, Nathan S., Atwater, Harry A.
المصدر: Applied Physics Letters, 91(10), Art. No. 103110, (2007-09-03)
مصطلحات موضوعية: annealing, catalysts, crystal growth from solution, crystal growth from vapour, elemental semiconductors, photolithography, semiconductor growth, silicon, wires
العلاقة: https://doi.org/10.1063/1.2779236Test; oai:authors.library.caltech.edu:esrfq-97x88; eprintid:8706; resolverid:CaltechAUTHORS:KAYapl07
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3تقرير
المؤلفون: Li MF(李密锋)
مصطلحات موضوعية: Inas Quantum Dots, Sacrificed Inas Layer, Molecular Beam Epitaxy, Reflection High-energy Electron, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: Nanoscale Research Letters; 李密锋.In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.Nanoscale Research Letters,2013,8(1):86; http://ir.semi.ac.cn/handle/172111/24136Test
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4تقرير
المؤلفون: Wang, W, Su, SJ, Zheng, J, Zhang, GZ, Zuo, YH, Cheng, BW, Wang, QM, Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,cbw@semi.ac.cn
مصطلحات موضوعية: Gesn Alloys, Strained, Strain-relaxed, Molecular Beam Epitaxy, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: CHINESE PHYSICS B; Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM.Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates,CHINESE PHYSICS B,2011,20(6):68103; http://ir.semi.ac.cn/handle/172111/22867Test
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5تقرير
المؤلفون: Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Inversion Asymmetry, Heterostructures, Segregation, Interface, 半导体材料, atomic layer deposition, separation, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF APPLIED PHYSICS; Yu JL; Chen YH; Jiang CY; Liu Y; Ma H.Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.53519; http://ir.semi.ac.cn/handle/172111/21277Test
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6تقرير
المؤلفون: Deng Y, Zhao DG, Le LC, Jiang DS, Wu LL, Zhu JJ, Wang H, Liu ZS, Zhang SM, Yang H, Liang JW, Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
مصطلحات موضوعية: Nitride Materials, Crystal Growth, Composition Fluctuations, X-ray Diffraction, Layer, 光电子学, x-ray crystallography, 晶体生长, crystals--growth, crystal growth from melt, bridgman method, czochralski method, edge-defined film fed growth, efg, kyropoulous method, lec growth, liquid encapsulated czochralski method, stepanov method, stockbarger method, verneuil process, crystal growth from vapour, crystal purification, purification, crystal, croissance des cristaux, kornwachstum, andrade method, czochralski process, x射线衍射, x ray diffraction
العلاقة: JOURNAL OF ALLOYS AND COMPOUNDS; Deng Y; Zhao DG; Le LC; Jiang DS; Wu LL; Zhu JJ; Wang H; Liu ZS; Zhang SM; Yang H; Liang JW.Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition,JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(3):748-750; http://ir.semi.ac.cn/handle/172111/21029Test
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7تقرير
المؤلفون: Zhu B (Zhu Bin), Han Q (Han Qin), Yang XH (Yang Xiao-Hong), Ni HQ (Ni Hai-Qiao), He JF (He Ji-Fang), Niu ZC (Niu Zhi-Chuan), Wang X (Wang Xin), Wang XP (Wang Xiu-Ping), Wang J (Wang Jie), Zhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Buffer Layers, Dark Current, Photodiodes, Lasers, 光电子学, atomic layer deposition, thermionic emission, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: CHINESE PHYSICS LETTERS; Zhu B (Zhu Bin), Han Q (Han Qin), Yang XH (Yang Xiao-Hong), Ni HQ (Ni Hai-Qiao), He JF (He Ji-Fang), Niu ZC (Niu Zhi-Chuan), Wang X (Wang Xin), Wang XP (Wang Xiu-Ping), Wang J (Wang Jie).Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs .CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038504; http://ir.semi.ac.cn/handle/172111/11186Test
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8تقرير
المؤلفون: Jia CH, Chen YH, Zhou XL, Liu GH, Guo Y, Liu XL, Yang SY, Wang ZG, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
مصطلحات موضوعية: Tio3, Growth Behavior, Mocvd, Inn 了chemical-vapor-deposition, Phase Epitaxy, Pressure, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH, 312 (3): JAN 15 2010; Jia CH, Chen YH, Zhou XL, Liu GH, Guo Y, Liu XL, Yang SY, Wang ZG.InN layers grown by MOCVD on SrTiO3 substrates.JOURNAL OF CRYSTAL GROWTH, 312 (3): JAN 15 2010,2010,312(3):373-377; http://ir.semi.ac.cn/handle/172111/11164Test
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9تقرير
المؤلفون: Wang ZG (Wang Zhiguo), Li JB (Li Jingbo), Gao F (Gao Fei), Weber WJ (Weber William J.), Wang, ZG, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail Address: zgwang@uestc.edu.cn, jbli@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd
العلاقة: APPLIED PHYSICS LETTERS; Wang ZG (Wang Zhiguo), Li JB (Li Jingbo), Gao F (Gao Fei), Weber WJ (Weber William J.) .Codoping of magnesium with oxygen in gallium nitride nanowires.APPLIED PHYSICS LETTERS,2010,96(10):Art. No. 103112; http://ir.semi.ac.cn/handle/172111/11135Test
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10تقرير
المؤلفون: Ma SS (Ma Shan-Shan), Wang, BR (Wang Bao-Rui), Sun BQ (Sun Bao-Quan), Wu DH (Wu Dong-Hai), Ni HQ (Ni Hai-Qiao), Niu ZC (Niu Zhi-Chuan), Ma, SS, Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd
العلاقة: CHINESE PHYSICS LETTERS; Ma, SS (Ma Shan-Shan); Wang, BR (Wang Bao-Rui); Sun, BQ (Sun Bao-Quan); Wu, DH (Wu Dong-Hai); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan) .Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells ,CHINESE PHYSICS LETTERS,OCT 2009 ,26(10):Art.No.107803; http://ir.semi.ac.cn/handle/172111/7597Test