المؤلفون: Hao RT (Hao Ruiting), Deng SK (Deng Shukang), Shen LX (Shen Lanxian), Yang PZ (Yang Peizhi), Tu JL (Tu Jielei), Liao H (Liao Hua), Xu YQ (Xu Yingqiang), Niu ZC (Niu Zhichuan), Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn

مصطلحات موضوعية: Gallium Arsenide, Gallium Antimonide, Gallium Antimonide/aluminum Antimonide, Superlattices, Molecular Beam Epitaxy, Vapor-phase Epitaxy, Surface-morphology, Growth, Temperature, Relaxation, Detectors, Gaas(001), Mocvd, Films, 半导体材料, metallic superlattices, atomic layer deposition, vapor phase epitaxy, surface contamination, development, photography--films, finite volume method, gaas, arseniures de gallium, galliumarsenid, antimonides de gallium, galliumantimonid, multilayers, compositionally modulated metallic, optical superlattices

العلاقة: THIN SOLID FILMS; Hao RT (Hao Ruiting), Deng SK (Deng Shukang), Shen LX (Shen Lanxian), Yang PZ (Yang Peizhi), Tu JL (Tu Jielei), Liao H (Liao Hua), Xu YQ (Xu Yingqiang), Niu ZC (Niu Zhichuan).Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers.THIN SOLID FILMS,2010,519(1):228-230; http://ir.semi.ac.cn/handle/172111/20681Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/20681Test

المؤلفون: Wang Y (Wang Y.), Chen NF (Chen N. F.), Zhang XW (Zhang X. W.), Huang TM (Huang T. M.), Yin ZG (Yin Z. G.), Wang YS (Wang Y. S.), Zhang H (Zhang H.)

مصطلحات موضوعية: Thermophotovoltaic, Gallium Antimonide, Absorption Coefficient, 半导体材料, opacity (optics), antimonides de gallium, galliumantimonid, 吸收率, absorptivity, absorptance, absorptivity (optics), density, optical, optical density, absorptive index, 吸收系数, 吸光系数, absorption (energy), absorbance, absorbing, absorption coefficients, optical absorption coefficients

العلاقة: SOLAR ENERGY MATERIALS AND SOLAR CELLS; Wang Y (Wang Y.), Chen NF (Chen N. F.), Zhang XW (Zhang X. W.), Huang TM (Huang T. M.), Yin ZG (Yin Z. G.), Wang YS (Wang Y. S.), Zhang H (Zhang H.).Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model.SOLAR ENERGY MATERIALS AND SOLAR CELLS,2010,94(10):1704-1710; http://ir.semi.ac.cn/handle/172111/13527Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/13527Test

المؤلفون: LU DC, LIU XL, WANG D, LIN LY, LU DC CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA

مصطلحات موضوعية: Gallium Antimonide, Omvpe, Gaas1-xsbx, Mocvd, 半导体材料, atomic layer deposition, antimonides de gallium, galliumantimonid, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour

العلاقة: JOURNAL OF CRYSTAL GROWTH; LU DC; LIU XL; WANG D; LIN LY.GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE,JOURNAL OF CRYSTAL GROWTH ,1992,124(0):383-388; http://ir.semi.ac.cn/handle/172111/14135Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/14135Test