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1تقرير
المؤلفون: Zhang JP, Sun DZ, Li XB, Wang XL, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Hydrogen Contaminant, Gsmbe, Growth, Raman Spectrum, Stress, 半导体材料, atomic layer deposition, residual stresses, stress (mechanics), photoelasticity, thermal stresses, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):429-432; http://ir.semi.ac.cn/handle/172111/12896Test
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2تقرير
المؤلفون: Zhang JP, Wang XL, Sun DZ, Li XB, Kong MY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
مصطلحات موضوعية: Gallium Nitride, Gas Source Molecular Beam Epitaxy, Hydrogen, Autodoping, Films, 半导体材料, photography--films, finite volume method, h2, hydrogene, wasserstoff, photographic film, motion pictures, movies, cinema, feature films--history and criticism, moving-pictures, microfilms, filmstrips, film slides, film strips, slidefilms, anodised layers, anodized layers, claddings, cvd coatings, chemical vapor deposited coatings, chemical vapour deposited coatings, cvd thin films
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY .High-concentration hydrogen in unintentionally doped GaN ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):566-569; http://ir.semi.ac.cn/handle/172111/13172Test
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3تقرير
المؤلفون: Zhang JP, Sun DZ, Li XB, Wang XL, Fu RH, Kong MY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, 2deg, Md Heterostructure, Mbe, Photoluminescence, Luminescence, Gallium Nitride, Plasma, 半导体材料, electron gas, atomic layer deposition, astrophysical plasma, laminar flow, space plasmas, 电子气, fermi gas, hole gas, luttinger liquid, rpa calculations, random phase approximation, tamm-dancoff approximation, two-dimensional electron gas, 2d electron gas, two-dimensional hole gas, 2d hole gas, rpa, tda, atomic layer epitaxial growth, ale, mle growth
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Fu RH; Kong MY .The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,192(1-2):93-96; http://ir.semi.ac.cn/handle/172111/13126Test
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4تقرير
المؤلفون: Zhang JP, Sun DZ, Wang XL, Li XB, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Mbe, Growth, Buried Alxga1-xn Isolating Layers, Buffer Layer, 半导体材料, atomic layer deposition, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Wang XL; Li XB; Kong MY; Zeng YP; Li JM; Lin LY .The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 ,JOURNAL OF CRYSTAL GROWTH ,1998,192(3-4):471-474; http://ir.semi.ac.cn/handle/172111/13110Test