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1دورية أكاديمية
المؤلفون: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, Zhi Jin
المصدر: Micromachines, Vol 13, Iss 5, p 748 (2022)
مصطلحات موضوعية: GaN, SBD, Schottky barrier diode, simulation, capacitance collapse, acceptor trap, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
المصدر: Micromachines, Vol 12, Iss 11, p 1296 (2021)
مصطلحات موضوعية: GaN, SBD, Schottky barrier diode, simulation, current collapse, electric field, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
المصدر: Nanomaterials, Vol 10, Iss 4, p 657 (2020)
مصطلحات موضوعية: GaN, inductively coupled plasma (ICP), mesa, sidewall profile, quasi-vertical, Schottky barrier diode (SBD), Chemistry, QD1-999
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Yuan Ji, Sen Huang, Qimeng Jiang, Ruizhe Zhang, Jie Fan, Haibo Yin, Yingkui Zheng, Xinhua Wang, Ke Wei, Xinyu Liu
المصدر: Electronics; Volume 12; Issue 8; Pages: 1767
مصطلحات موضوعية: AlGaN/GaN heterostructure, non-recessed, ultrathin barrier (UTB), ohmic contact, transfer length
وصف الملف: application/pdf
العلاقة: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12081767Test
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5
المؤلفون: Kexin Deng, Xinhua Wang, Sen Huang, Pengfei Li, Qimeng Jiang, Haibo Yin, Jie Fan, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xinyu Liu
المصدر: ACS Applied Materials & Interfaces. 15:25058-25065
مصطلحات موضوعية: General Materials Science
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::476acb07421b7134f25e0f977dbe578dTest
https://doi.org/10.1021/acsami.3c03094Test -
6
المؤلفون: Rikang Zhao, Xuanwu Kang, Yingkui Zheng, Hao Wu, Nan Wei, Shixiong Deng, Ke Wei, Xinyu Liu
المصدر: IEEE Microwave and Wireless Technology Letters. 33:208-211
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::e3011b466746fb484173c86ce4ca70c8Test
https://doi.org/10.1109/lmwc.2022.3204546Test -
7
المؤلفون: Hao Wu, Xuanwu Kang, Yingkui Zheng, Ke Wei, Rikang Zhao, Yafei Yuan, Xinyu Liu, Guoqi Zhang
المصدر: IEEE Transactions on Electron Devices. 70:402-408
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::95ce8466c96878b7acbf405a8dd2a0ddTest
https://doi.org/10.1109/ted.2022.3227223Test -
8دورية أكاديمية
المؤلفون: Xinhua Wang (286425), Yange Zhang (2031409), Sen Huang (5374796), Haibo Yin (1530037), Jie Fan (258204), Ke Wei (192091), Yingkui Zheng (5374799), Wenwu Wang (4352767), Haojie Jiang (3341594), Xuebang Wu (2367448), Xianping Wang (519946), Changsong Liu (2151742), Xinyu Liu (34266)
مصطلحات موضوعية: Biochemistry, Inorganic Chemistry, Chemical Sciences not elsewhere classified, chemical components, GaN, ultrathin layer, high-energy-activated Ga 2 O, Si 2 N 2 O, 1 ML θ- Ga 2 O 3 transition interface, formation mechanism, Low-density states, SiN x Grown, SiN x, Partially Crystallized Ultrathin In., mass action equation, X-ray photoelectron spectroscopy, depth profile analysis, Low-Pressure Chemical Vapor Deposition, interface supercell slabs, Interface Editing, energy changes, feasibility analysis
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9دورية أكاديمية
المؤلفون: Pengfei Li, Shuhua Wei, Xuanwu Kang, Yingkui Zheng, Jing Zhang, Hao Wu, Ke Wei, Jiang Yan, Xinyu Liu
المصدر: Electronics; Volume 10; Issue 7; Pages: 855
مصطلحات موضوعية: AlGaN/GaN HEMTs, ohmic contact, oxygen plasma, nitrogen vacancy, inductively coupled plasma (ICP) etching
وصف الملف: application/pdf
العلاقة: Semiconductor Devices; https://dx.doi.org/10.3390/electronics10070855Test
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10دورية أكاديمية
المؤلفون: Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu
المصدر: Electronics; Volume 10; Issue 4; Pages: 433
مصطلحات موضوعية: vertical, GaN SBD, L band, Schottky diode limiter, high power
وصف الملف: application/pdf
العلاقة: Semiconductor Devices; https://dx.doi.org/10.3390/electronics10040433Test