المؤلفون: Liu, Y-T, Huang, X, Nguyen, D, Shammas, MK, Wu, BP, Dombi, E, Springer, DA, Poulton, J, Sekine, S, Narendra, DP

العلاقة: https://ora.ox.ac.uk/objects/uuid:0d9096d4-20a6-4c0a-a1bc-b7ab4842d830Test; https://doi.org/10.1093/hmg/ddaa077Test

الإتاحة: https://doi.org/10.1093/hmg/ddaa077Test
https://ora.ox.ac.uk/objects/uuid:0d9096d4-20a6-4c0a-a1bc-b7ab4842d830Test

المؤلفون: Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC, Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Inas Quantum Dots, Metamorphic Buffer, Molecular Beam Epitaxy, 半导体化学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition

العلاقة: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; Wu BP; Wu DH; Xiong YH; Huang SS; Ni HQ; Xu YQ; Niu ZC .Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers ,JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,2009 ,9(2):1333-1336; http://ir.semi.ac.cn/handle/172111/7331Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7331Test

المؤلفون: Wang HL, Wu DH, Wu BP, Ni HQ, Huang SS, Xiong YH, Wang PF, Han Q, Niu ZC, Tangring I, Wang SM, Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com

مصطلحات موضوعية: Threshold Current-density, 半导体物理

العلاقة: CHINESE PHYSICS LETTERS; Wang HL; Wu DH; Wu BP; Ni HQ; Huang SS; Xiong YH; Wang PF; Han Q; Niu ZC; Tangring I; Wang SM .Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy ,CHINESE PHYSICS LETTERS,2009 ,26(1):Art. No. 014214; http://ir.semi.ac.cn/handle/172111/7385Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7385Test

المؤلفون: Tangring, I, Ni, HQ, Wu, BP, Wu, DH, Xiong, YH, Huang, SS, Niu, ZC, Wang, SM, Lai, ZH, Larsson, A, Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se

مصطلحات موضوعية: Dot Lasers, Growth, 半导体器件, development, 展开, ontogeny, alloy development, 增长性, animal growth, hypertrophy, maturing, growth rate (animals)

العلاقة: APPLIED PHYSICS LETTERS; Tangring, I; Ni, HQ; Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Niu, ZC; Wang, SM; Lai, ZH; Larsson, A .1.58 mu m InGaAs quantum well laser on GaAs ,APPLIED PHYSICS LETTERS,2007 ,91(22): Art. No. 221101; http://ir.semi.ac.cn/handle/172111/6964Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6964Test

المؤلفون: Wu, BP, Wu, DH, Ni, HQ, Huang, SS, Zhan, F, Xiong, YH, Xu, YQ, Niu, ZC, Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn

مصطلحات موضوعية: Layers, Surfactant, Substrate, Hemt, Sb, 半导体材料, modulation-doped field-effect transistors, antimony, lamina, plies, 底物, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt

العلاقة: CHINESE PHYSICS LETTERS; Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC .Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2007 ,24(12): 3543-3546; http://ir.semi.ac.cn/handle/172111/6952Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6952Test

المؤلفون: Li, GT, Li, GR, Li, XF, Wu, BP

المصدر: BJOG: An International Journal of Obstetrics & Gynaecology ; volume 123, issue 8, page 1380-1385 ; ISSN 1470-0328 1471-0528

الإتاحة: https://doi.org/10.1111/1471-0528.13685Test

المؤلفون: Li, GT, Li, GR, Li, XF, Wu, BP, Li, G T, Li, G R, Li, X F, Wu, B P

المصدر: BJOG: An International Journal of Obstetrics & Gynaecology; Jul2016, Vol. 123 Issue 8, p1380-1385, 6p, 3 Diagrams, 1 Chart

مصطلحات موضوعية: UTERINE hemorrhage treatment, SUTURES, COMPRESSION therapy, POSTNATAL care, PLACENTA praevia

المؤلفون: Wu, BP, Wu, DH, Xiong, YH, Huang, SS, Ni, HQ, Xu, YQ, Niu, ZC, Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Inas Quantum Dots, 半导体化学

العلاقة: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; Wu, BP;Wu, DH;Xiong, YH;Huang, SS;Ni, HQ;Xu, YQ;Niu, ZC.Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers .见：AMER SCIENTIFIC PUBLISHERS .JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA ,39845,9 (2): 1333-1336 Sp. Iss. SI FEB; http://ir.semi.ac.cn/handle/172111/8332Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/8332Test