يعرض 1 - 10 نتائج من 48 نتيجة بحث عن '"Weng, You-Chen"', وقت الاستعلام: 3.03s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

    المؤلفون: Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi

    المساهمون: Ministry of Science and Technology, Taiwan, Chung-Shan Institute of Science and Technology

    المصدر: physica status solidi (a) ; volume 220, issue 8 ; ISSN 1862-6300 1862-6319

    الإتاحة: https://doi.org/10.1002/pssa.202200536Test

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  2. 2
    دورية أكاديمية
    Ferroelectric-like behavior in HfO 2 /Al 2 O 3 /AlN metal-insulator-semiconductor capacitor through AlN thermal stress

    المؤلفون: Kao, Min-Lu, Lin, Yuan, Weng, You-Chen, Dee, Chang-Fu, Chang, Edward Yi

    المساهمون: MOST, Higher Education Sprout Project, Ministry of Education, Center for the Semiconductor Technology Research, The Featured Areas Research Center Program, Chung-Shan Institute of Science and Technology, Taiwan, Ministry of Science and Technology, Taiwan

    المصدر: Materials Research Express ; volume 9, issue 10, page 105903 ; ISSN 2053-1591

    الإتاحة: https://doi.org/10.1088/2053-1591/ac99c0Test

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  3. 3
    دورية أكاديمية
    Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

    المؤلفون: Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Huang, Cheng-Jun, Liang, Yan-Kui, Weng, You-Chen, Chang, Edward Yi

    المساهمون: Ministry of Science and Technology, Taiwan, Ministry of Education (MOE), Taiwan, National Chung-Shan Institute of Science and Technology

    المصدر: IEEE Journal of the Electron Devices Society ; volume 10, page 525-531 ; ISSN 2168-6734

    مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Biotechnology

    الإتاحة: https://doi.org/10.1109/jeds.2022.3188463Test
    http://xplorestaging.ieee.org/ielx7/6245494/9714452/09815223.pdf?arnumber=9815223Test

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  4. 4
    دورية أكاديمية
    Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

    المؤلفون: Wu, Jui-Sheng1 (AUTHOR), Weng, You-Chen2 (AUTHOR), Yang, Tsung-Ying2 (AUTHOR), Wu, Chia-Hsun1 (AUTHOR), Lee, Chih-Chieh1 (AUTHOR), Iwai, Hiroshi2 (AUTHOR), Chang, Edward Yi1,2 (AUTHOR) edc@mail.nctu.edu.tw

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Aug2023, Vol. 220 Issue 16, p1-11. 11p.

    مصطلحات موضوعية: *GALLIUM nitride, *METAL insulator semiconductors, *ELECTRON mobility, *ALUMINUM gallium nitride, *MODULATION-doped field-effect transistors, *INDIUM gallium zinc oxide, *LEAD titanate, *SEMICONDUCTOR technology


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  5. 5
    دورية أكاديمية
    The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

    المؤلفون: Wang, Chun, Hsu, Heng-Tung, Lin, Jui-Lung, Weng, You-Chen, Tsao, Yi-Fan, Wang, Yuan, Chang, Edward Yi

    المساهمون: Chung-Shan Institute of Science and Technology, Ministry of Science and Technology, Taiwan

    المصدر: Semiconductor Science and Technology ; volume 38, issue 7, page 074004 ; ISSN 0268-1242 1361-6641

    الإتاحة: https://doi.org/10.1088/1361-6641/acd13cTest

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  6. 6
    دورية أكاديمية
    Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

    المؤلفون: Chang, Bei Rong, Panda, Debashis, Weng, You-Chen, Yang, Chih Yi, Chang, Edward Yi

    المساهمون: Center for the Semiconductor Technology Research, Chung-Shan Institute of Science and Technology, The Featured Areas Research Center Program, Higher Education Sprout Project, Ministry of Education (MOE) in Taiwan, Ministry of Science and Technology, Taiwan

    المصدر: Semiconductor Science and Technology ; volume 38, issue 8, page 084001 ; ISSN 0268-1242 1361-6641

    الإتاحة: https://doi.org/10.1088/1361-6641/acda56Test

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  7. 7
    دورية أكاديمية
    Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.

    المؤلفون: Weng, You-Chen1 (AUTHOR) ycweng.c@nycu.edu.tw, Hsiao, Ming-Yao1 (AUTHOR) teaandtea38@gmail.com, Lin, Chun-Hsiung2,3 (AUTHOR) chun_lin@nycu.edu.tw, Lan, Yu-Pin1 (AUTHOR) yplan@nycu.edu.tw, Chang, Edward-Yi2,3 (AUTHOR) edc@nycu.edu.tw

    المصدر: Materials (1996-1944). May2023, Vol. 16 Issue 9, p3376. 10p.

    مصطلحات موضوعية: *GALLIUM nitride, *EDGE dislocations, *MODULATION-doped field-effect transistors, *NUCLEATION, *DISLOCATION density, *STRAY currents

    النص الكامل

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  8. 8
    دورية أكاديمية
    InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

    المؤلفون: Kao, Min-Lu, Liang, Yan-Kui, Lin, Yuan, Weng, You-Chen, Dee, Chang-Fu, Liu, Po-Tsun, Lee, Ching-Ting, Chang, Edward Yi

    المساهمون: Ministry of Science and Technology, Taiwan, Chung-Shan Institute of Science and Technology

    المصدر: IEEE Electron Device Letters ; volume 43, issue 12, page 2105-2108 ; ISSN 0741-3106 1558-0563

    الإتاحة: https://doi.org/10.1109/led.2022.3216620Test
    http://xplorestaging.ieee.org/ielx7/55/9965979/09927413.pdf?arnumber=9927413Test

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  9. 9
    دورية أكاديمية
    Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages.

    المؤلفون: Lin, Yuan, Kao, Min-Lu, Weng, You-Chen, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lin, Chun-Hsiung, Chang, Edward-Yi

    المصدر: Micromachines; Dec2022, Vol. 13 Issue 12, p2140, 10p

    مصطلحات موضوعية: MODULATION-doped field-effect transistors, SUPERLATTICES, BREAKDOWN voltage, BUFFER layers, VOLTAGE, OHMIC contacts, ELECTRIC fields

    النص الكامل

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  10. 10
    دورية أكاديمية
    E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

    المؤلفون: Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi

    المساهمون: National ChungShan Institute of Science and Technology, Ministry of Science and Technology Taiwan

    المصدر: IEEE Electron Device Letters ; volume 42, issue 9, page 1268-1271 ; ISSN 0741-3106 1558-0563

    الإتاحة: https://doi.org/10.1109/led.2021.3098726Test
    http://xplorestaging.ieee.org/ielx7/55/9523566/09492036.pdf?arnumber=9492036Test

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