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1دورية أكاديمية
المؤلفون: Pengfei Dai, Shaowei Wang, Hongliang Lu
المصدر: Micromachines, Vol 15, Iss 3, p 321 (2024)
مصطلحات موضوعية: GaN HEMT, VTH drift, high temperature and high voltage, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2مؤتمر
المؤلفون: Cioni M., Giorgino G., Chini A., Marletta G., Miccoli C., Castagna M. E., Luongo G., Moschetti M., Tringali C., Iucolano F.
المساهمون: Cioni, M., Giorgino, G., Chini, A., Marletta, G., Miccoli, C., Castagna, M. E., Luongo, G., Moschetti, M., Tringali, C., Iucolano, F.
مصطلحات موضوعية: 2-DEG density, Back-Effect, GaN HEMT, RON-degradation, Vertical Leakage, VTH drift
العلاقة: info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-3713-6; ispartofbook:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; https://hdl.handle.net/11380/1332187Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85183585579
الإتاحة: https://doi.org/10.1109/WiPDA58524.2023.10382224Test
https://hdl.handle.net/11380/1332187Test -
3مورد إلكتروني
مصطلحات الفهرس: Active-passivation p-GaN gate HEMT (AP-HEMT), Dynamic leakage current, Dynamic RON>degradation, Dynamic stability, Dynamic Vthdrift, Conference paper
URL:
https://repository.hkust.edu.hk/ir/Record/1783.1-128172Test https://doi.org/10.1109/ISPSD57135.2023.10147690Test http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6854&rft.volume=2023-May&rft.issue=&rft.date=2023&rft.spage=378&rft.aulast=Wu&rft.aufirst=Yanlin&rft.atitle=High+Dynamic+Stability+in+Enhancement-Mode+Active-Passivation+p-GaN+Gate+HEMT&rft.title=Proceedings+of+the+International+Symposium+on+Power+Semiconductor+Devices+and+ICsTest http://www.scopus.com/record/display.url?eid=2-s2.0-85163492340&origin=inwardTest
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