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المؤلفون: Svensson, Johannes, Olausson, Patrik, Menon, Heera, Lehmann, Sebastian, Lind, Erik, Borg, Mattias
المصدر: Nano Letters NanoLund: Centre for Nanoscience. 23(11):4756-4761
مصطلحات موضوعية: III-V semiconductors, InAs, metal-organic vapor-phase epitaxy, nanowires, selective area epitaxy, Si CMOS integration, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics
الوصول الحر: https://lup.lub.lu.se/record/2f2e61e4-0691-4ad8-8d03-8692bd35be05Test
http://dx.doi.org/10.1021/acs.nanolett.2c04908Test -
2دورية أكاديمية
المؤلفون: Dąbrowska, Aleksandra K., Binder, Johannes, Prozheev, Igor, Tuomisto, Filip, Iwański, Jakub, Tokarczyk, Mateusz, Korona, Krzysztof P., Kowalski, Grzegorz, Stępniewski, Roman, Wysmołek, Andrzej
المساهمون: Materials Physics, Helsinki Institute of Physics, Department of Physics
مصطلحات موضوعية: boron nitride, metal organic vapor phase epitaxy, photoluminescence, point defects, positron annihilation spectroscopy, vacancy, 114 Physical sciences
وصف الملف: application/pdf
العلاقة: This work was supported by the National Science Centre, Poland under decisions 2019/33/B/ST5/02766 and 2020/39/D/ST7/02811 .; Dąbrowska , A K , Binder , J , Prozheev , I , Tuomisto , F , Iwański , J , Tokarczyk , M , Korona , K P , Kowalski , G , Stępniewski , R & Wysmołek , A 2024 , ' Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy : luminescence and positron annihilation studies ' , Journal of Luminescence , vol. 269 , 120486 . https://doi.org/10.1016/j.jlumin.2024.120486Test; http://hdl.handle.net/10138/575161Test; 1dc1917c-c968-4838-a5c1-133fd84888c5; 85183960820; 001181761400001
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3دورية أكاديمية
المؤلفون: Marco Girolami, Matteo Bosi, Sara Pettinato, Claudio Ferrari, Riccardo Lolli, Luca Seravalli, Valerio Serpente, Matteo Mastellone, Daniele M. Trucchi, Roberto Fornari
المصدر: Materials, Vol 17, Iss 2, p 519 (2024)
مصطلحات موضوعية: wide-bandgap semiconductors, gallium oxide, diamond, vapor phase epitaxy, optical microscopy, X-ray diffraction, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
العلاقة: https://www.mdpi.com/1996-1944/17/2/519Test; https://doaj.org/toc/1996-1944Test; https://doaj.org/article/8be5de5244884ac39916171de520af37Test
الإتاحة: https://doi.org/10.3390/ma17020519Test
https://doaj.org/article/8be5de5244884ac39916171de520af37Test -
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المؤلفون: Strömberg, Axel, Manavaimaran, Balaji, Srinivasan, Lakshman, Lourdudoss, Sebastian, 1953, Sun, Yan-Ting
المصدر: Physica Status Solidi (a) applications and materials science. 220(8)
مصطلحات موضوعية: epitaxial lateral overgrowth, GaAsP/Si, hydride vapor-phase epitaxy
وصف الملف: print
الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-328312Test
https://doi.org/10.1002/pssa.202200623Test -
5دورية أكاديمية
المؤلفون: Takeyoshi SUGAYA, 菅谷 武芳
المصدر: 色材協会誌 / Journal of the Japan Society of Colour Material. 2023, 96(8):275
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6دورية أكاديمية
المؤلفون: Dong-Guang Zheng, Sangjin Min, Jiwon Kim, Dong-Pyo Han
المصدر: Materials, Vol 17, Iss 1, p 167 (2023)
مصطلحات موضوعية: quantum wells, metalorganic vapor phase epitaxy, screw-type dislocation, mixed-type dislocation, ScAlMgO4 (0001) substrate, sputtered-AlN buffer layer, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Yasushi Shoji, Ryuji Oshima, Kikuo Makita, Akinori Ubukata, Takeyoshi Sugaya
المصدر: Advanced Energy & Sustainability Research, Vol 4, Iss 5, Pp n/a-n/a (2023)
مصطلحات موضوعية: GaInAsP, hydride vapor-phase epitaxy, III–V solar cells, multijunction solar cells, Environmental technology. Sanitary engineering, TD1-1066, Renewable energy sources, TJ807-830
وصف الملف: electronic resource
العلاقة: https://doaj.org/toc/2699-9412Test
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8دورية أكاديمية
المؤلفون: H.D. Cho, P. Ilanchezhiyan, G. Mohan Kumar, D.J. Lee, T.W. Kang, D.Y. Kim
المصدر: Journal of Materials Research and Technology, Vol 20, Iss , Pp 4624-4629 (2022)
مصطلحات موضوعية: Topological insulator, Vapor phase epitaxy (VPE), Thin films, photoswitching, Mining engineering. Metallurgy, TN1-997
وصف الملف: electronic resource
العلاقة: http://www.sciencedirect.com/science/article/pii/S2238785422014235Test; https://doaj.org/toc/2238-7854Test
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المؤلفون: Bi, Zhaoxia, Lu, Taiping, Colvin, Jovana, Sjögren, Elis, Vainorius, Neimantas, Gustafsson, Anders, Johansson, Jonas, Timm, Reiner, Lenrick, Filip, Wallenberg, Reine, Monemar, Bo, Samuelson, Lars
المصدر: ACS Applied Materials and Interfaces. 12(15):17845-17851
مصطلحات موضوعية: chemical mechanical polishing, InGaN, micro-LEDs, selective area growth, template, vapor phase epitaxy
وصف الملف: print
الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-44785Test
https://doi.org/10.1021/acsami.0c00951Test -
10دورية أكاديمية
المؤلفون: Li Taotao, Yang Yang, Zhou Liqi, Sun Wenjie, Lin Weiyi, Liu Lei, Zou Xilu, Gao Si, Nie Yuefeng, Shi Yi, Wang Xinran
المصدر: National Science Open, Vol 2 (2023)
مصطلحات موضوعية: halide vapor phase epitaxy, single-crystal, molybdenum diselenide, 2D semiconductor, wafer-scale, Science, Engineering (General). Civil engineering (General), TA1-2040
وصف الملف: electronic resource
العلاقة: https://doaj.org/toc/2097-1168Test
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