المؤلفون: Smith, Henry I., Aucoin, Richard J., Carter, James M., Chu, William, Fleming, Robert C., Jr., Ghanbari, Reza A., Gupta, Nitin, Hector, Scott D., Li, Huiying, Moel, Alberto M., Schattenburg, Mark L., Wong, Vincent V., Ferrera, Juan, Lim, Michael H. Y., Mondol, Mark K., Frankel, Robert, Shah, Satyen N., Antoniadis, Dimitri A., Chung, James E., Fang, Hao, Hu, Hang, Eugster, Cristopher C., Kumar, Arvind, Orlando, Terry P., Rooks, Michael J., Burkhardt, Martin, del Alamo, Jesús A., Chou, Michael T., Shayegan, M., Sang-hun, Song, Tsui, Daniel, Yee, Kenneth, Zhao, Yang, Choi, Woo-Young, Fonstad, Clifton G., Jr., Damask, Jay N., Haus, Hermann A., Kolodziejski, Leslie A., Chu, Jack, Graybeal, John M., Meyerson, Bernard S., Rittenhouse, George E., Lew, Julie C., Canizares, Claude R., Ismail, Khalid, Karam, Nasser

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Nanometer Structures Technology, Nanometer Structures Research, Submicron Structures Laboratory, X-Ray Nanolithography, Improved Mask Technology for X-Ray Lithography, Improved Scanning Electron Beam Lithography, High-Precision Mask Alignment Scheme, Achromatic Holographic Lithography, Fabrication of T-gate Devices using X-ray Lithography, Tenth-micron MOSFET Device Technology, Coulomb Charging Effects in Semiconductor Nanostructures, Quasi-One-Dimensional Wires in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Dual Electron Waveguide Device Fabricated Using X-ray Lithography, Far-Infrared Spectroscopy of Arrays of Quantum Dots, Far-Infrared Spectroscopy of Arrays of Quantum Wires, Ridge-Grating Distributed-Feedback Lasers Fabricated by X-Ray Lithography, Channel-Dropping Filters Fabricated by X-Ray Lithography, Novel Superconducting Tunneling Structures, Submicrometer-Period Transmission Gratings for X-ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-ray Spectroscopy, Submicron-Thickness X-ray Window Technology, GaAs Epitaxy on Sawtooth-Patterned Silicon

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992; Solid State Physics, Electronics and Optics; Quantum-Effect Devices; Submicron and Nanometer Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135; RLE_PR_135_01_02s_04; http://hdl.handle.net/1721.1/57219Test

الإتاحة: http://hdl.handle.net/1721.1/57219Test

المؤلفون: Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Hector, Scott D., Ku, Yao-Ching, Moel, Alberto M., Rittenhouse, George E., Schattenburg, Mark L., Wong, Vincent V., Yen, Anthony T., Ferrera, Juan, Mondol, Mark K., Ng, Lee-Peng, Tsai, Flora S., Yunus, Sabah, Antoniadis, Dimitri A., Chung, James E., Fang, Hao, Hu, Hang, Su, Lisa T-F., Kastner, Marc A., Kumar, Arvind, Orlando, Terry P., del Alamo, Jesús A., Eugster, Cristopher C., Moon, Euclid E., Shayegan, M., Tsui, Daniel, Zhao, Yang, Chou, Michael T., Choi, Woo-Young, Damask, Jay N., Fonstad, Clifton G., Jr., Haus, Hermann A., Kolodziejski, Leslie A., Graybeal, John M., Meyerson, Bernard S., Olster, Daniel B., Canizares, Claude R., Fleming, Robert C., Jr., Nenonen, Seppo, Bristowe, Paul D., Carel, Roland, Floro, Jerrold A., Thompson, Carl V., Yee, Kenneth, Ismail, Khalid, Karam, Nasser

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Nanometer Structures Technology, Nanometer Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100 nm and Below, Improved Mask Technology for X-Ray Lithography, Electron Transport in Si MOSFETs with Deep-Submicron Channel Lengths, Coulomb Charging in Ultrasmall Semiconductor Devices, Quasi-One-Dimensional Wires in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, Superlattice Formation in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, GaAs Electron Waveguide Devices Fabricated by X-Ray Lithography, Arrays of Field-Effect-Induced Quantum Dots, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Fabrication of Distributed-Feedback Lasers, Fabrication of Channel-Dropping Filters, Novel Superconducting Tunneling Structures, Submicrometer-Period Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-Ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Submicron-Thickness X-Ray Window Technology, Epitaxy via Surface-Energy-Driven Grain Growth, GaAs Epitaxy on Sawtooth-patterned Si

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991; Solid State Physics, Electronics and Optics; Quantum-Effect Devices; Submicron and Nanometer Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134; RLE_PR_134_01_02s_04; http://hdl.handle.net/1721.1/57185Test

الإتاحة: http://hdl.handle.net/1721.1/57185Test

المؤلفون: Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto M., Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Gutierrez, JoAnne M., Lu, Kenneth P., Ng, Lee-Peng, Salyani, Shahir R., Su, Lisa T-F., Tsai, Flora S., Wey, Lead, Antoniadis, Dimitri A., Carlin, Gregory A., Fang, Hao, Hu, Hang, Field, Stuart B., Kastner, Marc A., Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Yee, Kenneth, Evans, Keith, Liu, C. T., Shayegan, M., Smith, T. P., Tsui, Daniel, Zhao, Yang, Canizares, Claude R., Floro, Jerrold A., Thompson, Carl V.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100 nm and Below, Improved Mask Technology for X-Ray Lithography, Electron Transport in Si MOSFETs with Deep-Submicron Channel Lengths, Electronic Conduction in One-Dimensional Semiconductor Devices, Lateral-Surface-Superlattice in Si, Quantum Wire Arrays in Si, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Arrays of Field-Effect-Induced Quantum Dots, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Submicrometer-Period Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-Ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Epitaxy via Surface-Energy-Driven Grain Growth, Publications

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990; Solid State Physics, Electronics and Optics; Materials and Fabrication; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133; RLE_PR_133_01_01s_01; http://hdl.handle.net/1721.1/57151Test

الإتاحة: http://hdl.handle.net/1721.1/57151Test

المؤلفون: Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto, Quek, Hui Meng, Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Lu, Kenneth P., Su, Lisa T-F., Gutierrez, JoAnne M., Tsai, Flora S., Antoniadis, Dimitri A., Carlin, Gregory A., Meyer, Paul G., Shahidi, Ghavam G., Field, Stuart B., Kastner, Marc A., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Liu, C. T., Smith, T. P., Tsui, Daniel, Canizares, Claude R., Floro, Jerold A., Thompson, Carl V.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Electron Transport in Si MOSFETs with Deep-Submicron Channel Lengths, Electronic Conduction in One-Dimensional Semiconductor Devices, Surface Superlattice Formation in Silicon Inversion Layers Using 0.2 μm-Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Arrays of Field-Effect-Induced Quantum Dots, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFETs), Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical Spectroscopy, Epitaxy via Surface-Energy-Driven Grain Growth

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989; Solid State Physics, Electronics and Optics; Materials and Fabrication; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132; RLE_PR_132_01_01s_01; http://hdl.handle.net/1721.1/57116Test

الإتاحة: http://hdl.handle.net/1721.1/57116Test

المؤلفون: Anderson, Erik H., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ku, Yao-Ching, Quek, Hui Meng, Moel, Alberto, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Plotnik, Irving, Kawata, Hiroaki, Antoniadis, Dimitri A., Field, Stuart B., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Meyer, Paul, Shahidi, Ghavam G., The, Siang-Chun, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., III, Palmer, Joyce E., Canizares, Claude R.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Optical Projection Lithography Using Lenses of High Numerical Aperture, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 0.2μm-Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Electron Transport In Si MOSFETs With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988; Solid State Physics, Electronics And Optics; Materials and Fabrication; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131; RLE_PR_131_01_01s_01; http://hdl.handle.net/1721.1/57073Test

الإتاحة: http://hdl.handle.net/1721.1/57073Test

المؤلفون: Anderson, Erik H., Chu, William, Plotnik, Irving, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Warren, Alan C., Antoniadis, Dimitri A., Orlando, Terry P., Melngailis, John, Chou, Stephen Y., Shahidi, Ghavam G., Licini, Jerome C., Scott-Thomas, John H. F., Park, Samuel L., Kastner, Marc A., Atwater, Harry A., Garrison, Stephen M., Palmer, Joyce E., Quek, Hui Meng, Wong, Chee C., Thompson, Carl V., Canizaares, Claude C., Stein, Josephine A., Summa, Deborah A., Paynter, Henry M., Rajchman, Jan A., Tse, Ming K.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Corrugated Gate MOS Structures, MOSFET's in Si with Deep-Submicron Channel Lengths, Electronic Conduction in Submicron Silicon Inversion Layers, Crystalline Films on Amorphous Substrates, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings, Switchable Zero Order Diffraction Grating Light Valves

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128; RLE_PR_128_01; http://hdl.handle.net/1721.1/56948Test

الإتاحة: http://hdl.handle.net/1721.1/56948Test

المؤلفون: Anderson, Erik H., Carter, James M., Chu, William, Quek, Hui Meng, Plotnik, Irving, Schattenburg, Mark L., Yen, Anthony T., Smith, Henry I., Ku, Yao-C., Field, S. B., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Antoniadis, Dimitri A., Kastner, Marc A., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Shahidi, Ghavam G., Ajuria, Sergio, Atwater, Harry A., Floro, Jerrold A., Thompson, Carl V., Palmer, Joyce E., Canizares, Claude R.

مصطلحات موضوعية: Submicron Structures Technology and Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Theoretical Analysis Of The Lithography Process, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 200 μm Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, Investigation of One-Dimensional Conductivity in Multiple, Parallel Inversion Lines, Electron Transport In MOSFET's In Si With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Ion-Bombardment-Enhanced Grain Growth In Thin Films, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1987; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 130; RLE_PR_130_01; http://hdl.handle.net/1721.1/57036Test

الإتاحة: http://hdl.handle.net/1721.1/57036Test

المؤلفون: Anderson, Erik H., Plotnik, Irving, Schattenburg, Mark L., Melngailis, John, Smith, Henry I., Kwasnick, Robert F., Licini, Jerome C., Kastner, Marc A., Lee, Patrick A., Warren, Alan C., Antoniadis, Dimitri A., Chou, Stephen Y., Shahidi, Ghavam G., Ippen, Erich P., Palmer, Joyce E., Wong, Chee C., Yonehara, Takao, Garrison, Stephen M., Atwater, Harry A., Thompson, Carl V., Schott, Stephen C., Canizares, Claude R., Stein, Josephine A., Summa, Deborah A., Rajchman, Jan A., Paynter, Henry M., Chen, Dong-Pei, Haus, Hermann A.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Electronic Conduction in Ultra-Narrow Silicon Inversion Layers, Corrugated Gate MOS Structures, Submicron FET's in Si, Submicron-Gap High-Mobility Silicon Picosecond Photodetectors, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Zone-Melting Recrystallization of Si for Solar Cells, Integration of Si and Ill-V Materials, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Display Based on Switchable Zero Order Diffraction Grating Light Valves, Surface Acoustic Wave Propagation in Gratings, Near IR Grating Polarizers

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_01; http://hdl.handle.net/1721.1/56933Test

الإتاحة: http://hdl.handle.net/1721.1/56933Test

مصطلحات الفهرس: Submicron Structures Technology, Submicron Structures Research, Nanometer Structures Technology, Nanometer Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100 nm and Below, Improved Mask Technology for X-Ray Lithography, Electron Transport in Si MOSFETs with Deep-Submicron Channel Lengths, Coulomb Charging in Ultrasmall Semiconductor Devices, Quasi-One-Dimensional Wires in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, Superlattice Formation in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, GaAs Electron Waveguide Devices Fabricated by X-Ray Lithography, Arrays of Field-Effect-Induced Quantum Dots, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Fabrication of Distributed-Feedback Lasers, Fabrication of Channel-Dropping Filters, Novel Superconducting Tunneling Structures, Submicrometer-Period Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-Ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Submicron-Thickness X-Ray Window Technology, Epitaxy via Surface-Energy-Driven Grain Growth, GaAs Epitaxy on Sawtooth-patterned Si, Technical Report

URL: http://hdl.handle.net/1721.1/57185Test
Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991
Solid State Physics, Electronics and Optics
Quantum-Effect Devices
Submicron and Nanometer Structures Technology and Research
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134