تقرير
Characterization of a graphene-hBN superlattice field effect transistor
| العنوان: | Characterization of a graphene-hBN superlattice field effect transistor |
|---|---|
| المؤلفون: | Choi, Won Beom, Son, Youngoh, Park, Hangyeol, Jeong, Yungi, Oh, Junhyeok, Watanabe, K., Taniguchi, T., Jang, Joonho |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics |
| الوصف: | Graphene is a unique platform to naturally host a high quality 2D electron system. With hBN encapsulation to protect the graphene from the noisy environment, it has a potential to realize ultrahigh performance nanodevices, such as photodiodes and transistors. However, absence of a band gap at Dirac point poses challenges in using the system as a useful transistor. In this study, we investigate the functionality of a hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, the band gaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moire potential. To characterize as a submicron scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch-off the channel, demonstrating that this system can be tuned at an optimal on/off ratio regime by controlling the gates separately. These findings will present a useful reference point for further development of the FETs based on graphene heterostructures. |
| نوع الوثيقة: | Working Paper |
| الوصول الحر: | http://arxiv.org/abs/2405.06267Test |
| رقم الانضمام: | edsarx.2405.06267 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |