المؤلفون: Thomas, Sidharth, Razavian, Sam, Sun, Wei, Motlagh, Benyamin Fallahi, Kim, Anthony D, Wu, Yu, Williams, Benjamin S, Babakhani, Aydin

المصدر: IEEE Journal of Solid-State Circuits. 58(9)

مصطلحات موضوعية: Communications Engineering, Engineering, Electrical Engineering, Electronics, Sensors and Digital Hardware, P-i-n diodes, Harmonic analysis, Switches, Semiconductor device measurement, Silicon germanium, Radio frequency, Cathodes, Far infrared, folded dipole, Fourier-transform infrared, frequency multiplier, injection locking, millimeter wave, p-i-n diode, SiGe, terahertz, Condensed Matter Physics, Electrical and Electronic Engineering, Other Technology, Electrical & Electronic Engineering, Electronics, sensors and digital hardware

وصف الملف: application/pdf

الوصول الحر: https://escholarship.org/uc/item/6501x19sTest
https://escholarship.org/content/qt6501x19s/qt6501x19s.pdfTest

المؤلفون: Nguyen Thi Hao Nhi, Turpaud Victor, Koompai Natnicha, Peltier Jonathan, Calcaterra Stefano, Isella Giovanni, Coudevylle Jean-René, Alonso-Ramos Carlos, Vivien Laurent, Frigerio Jacopo, Marris-Morini Delphine

المصدر: Nanophotonics, Vol 13, Iss 10, Pp 1803-1813 (2024)

مصطلحات موضوعية: silicon photonics, electro-optical modulator, photodetector, silicon-germanium, pin diode, mid-infrared, Physics, QC1-999

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2192-8614Test

الوصول الحر: https://doaj.org/article/55024a27329c4f0e9a408ecd2b04ab8eTest

المؤلفون: U. R. Pfeiffer, A. Kutaish

المصدر: IEEE Open Journal of the Solid-State Circuits Society, Vol 4, Pp 1-11 (2024)

مصطلحات موضوعية: fields, plenoptic function, silicon-germanium (SiGe), terahertz imaging, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/10302341Test/; https://doaj.org/toc/2644-1349Test

الوصول الحر: https://doaj.org/article/57b89ffbd592458886fd8c737f57b51fTest

المؤلفون: Corley-Wiciak, Cedric

مصطلحات موضوعية: Synchrotron, Roentgenbeugung, Quantenprozessoren, Gitterverspannung, Silizium-Germanium, Halbleiter, X-ray Diffraction, Quantum Computing, Lattice Strain, Silicon Germanium, Semiconductors, 530 Physik

الإتاحة: https://doi.org/10.18452/28342Test
https://edoc.hu-berlin.de/handle/18452/29264Test

المؤلفون: Mamor, Mohammed, Bouziane, Khalid, Chakir, Hind, Ruterana, Pierre

المساهمون: Université Cadi Ayyad Marrakech (UCA), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Internationale de Rabat (UIR)

المصدر: ISSN: 1369-8001 ; Materials Science in Semiconductor Processing ; https://normandie-univ.hal.science/hal-04622015Test ; Materials Science in Semiconductor Processing, 2024, 176, pp.108314. ⟨10.1016/j.mssp.2024.108314⟩.

مصطلحات موضوعية: Schottky barrier inhomogeneities, Reverse current-voltage characteristics, Schottky diodes, silicon-germanium, [PHYS]Physics [physics]

العلاقة: hal-04622015; https://normandie-univ.hal.science/hal-04622015Test; https://normandie-univ.hal.science/hal-04622015/documentTest; https://normandie-univ.hal.science/hal-04622015/file/Clear%20copy-JMSP-%20MSSP-D-24-00388.pdfTest

الإتاحة: https://doi.org/10.1016/j.mssp.2024.108314Test
https://normandie-univ.hal.science/hal-04622015Test
https://normandie-univ.hal.science/hal-04622015/documentTest
https://normandie-univ.hal.science/hal-04622015/file/Clear%20copy-JMSP-%20MSSP-D-24-00388.pdfTest

المؤلفون: von Pock, J. F.¹, Salloch, D.¹, Wieser, U.¹, Hackbarth, T.², Kunze, U.¹ ulrich.kunze@rub.de

المصدر: Journal of Applied Physics. 2017, Vol. 121 Issue 1, p1-5. 5p. 1 Black and White Photograph, 3 Graphs.

مصطلحات موضوعية: *SILICON germanium integrated circuits, *THERMOELECTRIC power, *HOT carriers, *ELECTRIC potential measurement, *TEMPERATURE measurements, *MATHEMATICAL models

المؤلفون: Eneman, Geert¹, Roussel, Philippe¹, Brunco, David Paul^1,2, Collaert, Nadine¹, Mocuta, Anda¹, Thean, Aaron¹

المصدر: Journal of Applied Physics. 2016, Vol. 120 Issue 5, p1-12. 12p. 2 Diagrams, 3 Charts, 14 Graphs.

مصطلحات موضوعية: *SILICON germanium integrated circuits, *VALENCE bands, *CONDUCTION bands, *CRYSTAL orientation, *FIELD-effect transistors

المؤلفون: Cong Luo¹, Sai-Wai Wong² wongsaiwai@ieee.org, Rui-Sen Chen², Xi Zhu³, Yang Yang³, Jing-Yu Lin³, Zhi-Hong Tu¹, Quan Xue¹

المصدر: IET Microwaves, Antennas & Propagation (Wiley-Blackwell). 2020, Vol. 14 Issue 6, p559-565. 7p.

مصطلحات موضوعية: *TECHNOLOGY, BANDPASS filters, SILICON germanium integrated circuits, METAL oxide semiconductors, TRANSMISSION zeros, RESONATORS, INSERTION loss (Telecommunication)

المؤلفون: Benedikovic, Daniel¹ (AUTHOR) daniel.benedikovic@c2n.upsaclay.fr, Cassan, Eric¹ (AUTHOR), Marris-Morini, Delphine¹ (AUTHOR), Baudot, Charles² (AUTHOR), Boeuf, Frederic² (AUTHOR) frederic.boeuf@st.com, Fedeli, Jean-Marc³ (AUTHOR), Kopp, Christophe³ (AUTHOR), Vivien, Laurent¹ (AUTHOR), Virot, Leopold³ (AUTHOR) leopold.virot@cea.fr, Aubin, Guy¹ (AUTHOR), Hartmann, Jean-Michel³ (AUTHOR), Amar, Farah¹ (AUTHOR), Szelag, Bertrand³ (AUTHOR), Le Roux, Xavier¹ (AUTHOR), Alonso-Ramos, Carlos¹ (AUTHOR), Crozat, Paul¹ (AUTHOR)

المصدر: IEEE Journal of Quantum Electronics. Feb2020, Vol. 56 Issue 1, p1-9. 9p.

مصطلحات موضوعية: *SEMICONDUCTOR manufacturing, SILICON germanium integrated circuits, PHOTODETECTORS, GERMANIUM, OPTICAL interconnects, ENERGY dissipation, SEMIMETALS

المؤلفون: Tsutsumi, Takuya¹ (AUTHOR) takuya.tsutsumi.pf@hco.ntt.co.jp, Hamada, Hiroshi¹ (AUTHOR) hiroshi.hamada.gs@hco.ntt.co.jp, Sano, Kimikazu¹ (AUTHOR) kimikazu.sano.nc@hco.ntt.co.jp, Ida, Minoru¹ (AUTHOR) minoru.ida.zd@hco.ntt.co.jp, Matsuzaki, Hideaki¹ (AUTHOR) matsuzaki.hideaki.rs@hco.ntt.co.jp

المصدر: IEEE Transactions on Electron Devices. Sep2019, Vol. 66 Issue 9, p3771-3776. 6p.

مصطلحات موضوعية: *FEASIBILITY studies, MODULATION-doped field-effect transistors, SILICON germanium integrated circuits, HETEROJUNCTION bipolar transistors, SEMICONDUCTOR materials