التفاصيل البيبلوغرافية
| العنوان: |
50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF 4 Plasma |
| المؤلفون: |
Ryoichi Inanami, Ryoichi Inanami, Tomoya Yamada, Tomoya Yamada, Shintaro Ohsaki, Shintaro Ohsaki, Shinji Ogawa, Shinji Ogawa, Shinzo Morita, Shinzo Morita |
| المصدر: |
Japanese Journal of Applied Physics ; volume 36, issue 12S, page 7706 ; ISSN 0021-4922 1347-4065 |
| بيانات النشر: |
IOP Publishing |
| سنة النشر: |
1997 |
| الوصف: |
50 nm lines and spaces pattern etching on a Si wafer in a synchrotron radiation (SR) excited CF 4 gas atmosphere was performed under a negative bias voltage in which the SR light beam was irradiated perpendicularly to the Si wafer. As etching species, positive ions are expected to be predominant. The SR excited plasma and the excited species are discussed. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| DOI: |
10.1143/jjap.36.7706 |
| DOI: |
10.1143/JJAP.36.7706 |
| DOI: |
10.1143/JJAP.36.7706/pdf |
| الإتاحة: |
https://doi.org/10.1143/jjap.36.7706Test |
| حقوق: |
https://iopscience.iop.org/page/copyrightTest ; https://iopscience.iop.org/info/page/text-and-data-miningTest |
| رقم الانضمام: |
edsbas.98D973F5 |
| قاعدة البيانات: |
BASE |
