المؤلفون: Balmashnov A.A., Golovanivsky K.S., Omeljanovsky E.M., Pakhomov A.V., Polyakov A.Y.

المصدر: Semiconductor Science and Technology

مصطلحات موضوعية: Atomic Hydrogen, Crossed Beams Method, Hydrogen Passivation, Ion Bombardment, Molecular Hydrogen, Schottky Diodes, Hydrogen, Plasmas--Microwaves, Semiconductor Diodes, Semiconducting Gallium Arsenide

العلاقة: https://doi.org/10.1088/0268-1242/5/3/010Test; https://openrepository.ru/article?id=244159Test

الإتاحة: https://doi.org/10.1088/0268-1242/5/3/010Test
https://openrepository.ru/article?id=244159Test

المؤلفون: Khayrudinov, Vladislav, Mäntynen, Henrik, Dhaka, Veer, Pyymaki Perros, Alexander, Haggren, Tuomas, Jussila, Henri, Lipsanen, Harri

المساهمون: Department of Electronics and Nanoengineering, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: B2 semiconducting gallium arsenide, A1 nanostructures, B1 nanowires, A3 metalorganic vapor phase epitaxy, B3 photovoltaic applications, B2 transparent conductive oxides

وصف الملف: application/pdf

العلاقة: Journal of Crystal Growth; Volume 548; Khayrudinov , V , Mäntynen , H , Dhaka , V , Pyymaki Perros , A , Haggren , T , Jussila , H & Lipsanen , H 2020 , ' Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applications ' , Journal of Crystal Growth , vol. 548 , 125840 . https://doi.org/10.1016/j.jcrysgro.2020.125840Test; PURE UUID: cc535d0a-8668-4218-9c1f-c85e1219b2f9; PURE ITEMURL: https://research.aalto.fi/en/publications/cc535d0a-8668-4218-9c1f-c85e1219b2f9Test; PURE LINK: http://www.scopus.com/inward/record.url?scp=85089550378&partnerID=8YFLogxKTest; PURE LINK: http://www.sciencedirect.com/science/article/pii/S0022024820303638Test; PURE FILEURL: https://research.aalto.fi/files/45128741/Khayrudinov_Hybrid_gaas_nanowire_polymer_device_on_glass.pdfTest; https://aaltodoc.aalto.fi/handle/123456789/46297Test; URN:NBN:fi:aalto-202008285235

الإتاحة: https://doi.org/10.1016/j.jcrysgro.2020.125840Test
https://aaltodoc.aalto.fi/handle/123456789/46297Test

المؤلفون: Kim, Yong, Joyce, Hannah J, Gao, Qiang, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: 2005 IEEE LEOS Annual Meeting Conference Proceedings

مصطلحات موضوعية: Keywords: Crystal growth, Crystal lattices, Crystal orientation, Metallorganic chemical vapor deposition, Heterostructure nanowire, Vertical nanowires, Semiconducting gallium arsenide

جغرافية الموضوع: Sydney Australia

العلاقة: Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005); http://hdl.handle.net/1885/84401Test

الإتاحة: https://doi.org/10.1109/LEOS.2005.1548075Test
http://hdl.handle.net/1885/84401Test

المؤلفون: Hunter, N, Mayorov, A.S, Wood, C.D, Russell, C, Li, L, Linfield, E.H, Davies, A.G, Cunningham, J.E

المساهمون: CENTRE FOR ADVANCED 2D MATERIALS

المصدر: Unpaywall 20201031

مصطلحات موضوعية: Gallium arsenide, Graphene, Photoconductivity, Semiconducting gallium, Semiconducting gallium arsenide, Semiconductor switches, Switches, Temperature, Terahertz waves, GaAs, Goubau line, Low-temperature grown gallium arsenide (LT-GaAs), On chips, Picosecond duration, Terahertz frequencies, THz detection, Transport modeling, Photoconductive switches

العلاقة: Hunter, N, Mayorov, A.S, Wood, C.D, Russell, C, Li, L, Linfield, E.H, Davies, A.G, Cunningham, J.E (2015). On-chip picosecond pulse detection and generation using graphene photoconductive switches. Nano Letters 15 (3) : 1591-1596. ScholarBank@NUS Repository. https://doi.org/10.1021/nl504116wTest; https://scholarbank.nus.edu.sg/handle/10635/183886Test

الإتاحة: https://doi.org/10.1021/nl504116wTest
https://scholarbank.nus.edu.sg/handle/10635/183886Test

المؤلفون: José Alvarez, Alexandre Larrue, Gwenaëlle Hamon, Nicolas Paillet, Jean Decobert

المساهمون: Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), TOTAL S.A., TOTAL FINA ELF, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Association Nationale de la Recherche et de la Technologie 2014/1031

المصدر: Journal of Crystal Growth
Journal of Crystal Growth, 2018, 498, pp.301-306. ⟨10.1016/j.jcrysgro.2018.07.003⟩

مصطلحات موضوعية: Materials science, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, 7. Clean energy, Gallium arsenide, Inorganic Chemistry, B1. Semiconducting gallium arsenide, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Tunnel junction, Telluride, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Gallium, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, A2. Metalorganic vapor phase epitaxy, chemistry, Indium phosphide, Optoelectronics, B3. Multijunction solar cells, A1. Doping, 0210 nano-technology, business, Tellurium

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f8ec72316f610df04ae014c53d737e8Test
https://doi.org/10.1016/j.jcrysgro.2018.07.003Test

المؤلفون: Zelcovit, J. G., Bortoleto, J. R R, Bettini, J., Cotta, M. A.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Chemical beam epitaxy, Epitaxial growth, Nucleation, Reflection high energy electron diffraction, Semiconductor quantum dots, Stress analysis, Surface topography, Compositional modulation, In-situ monitoring, Periodic stress, Vertically-coupled quantum dots, Semiconducting gallium arsenide

وصف الملف: 133-138

العلاقة: Materials Research Society Symposium Proceedings; 0,139; http://dx.doi.org/10.1557/PROC-0891-EE03-15Test; Materials Research Society Symposium Proceedings, v. 891, p. 133-138.; http://hdl.handle.net/11449/69042Test; 2-s2.0-33747335199

الإتاحة: https://doi.org/10.1557/PROC-0891-EE03-15Test
http://hdl.handle.net/11449/69042Test

المؤلفون: Silva, José Humberto Dias da, Campomanes, R. R.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Crystal defects, Electron energy levels, Light absorption, Semiconducting gallium arsenide, Spectroscopy, Flash evaporated films, Amorphous films

وصف الملف: 328-332

العلاقة: Journal of Non-Crystalline Solids; 2.488; 0,722; http://dx.doi.org/10.1016/S0022-3093Test(01)01189-9; Journal of Non-Crystalline Solids, v. 299-302, n. PART 1, p. 328-332, 2002.; http://hdl.handle.net/11449/66858Test; WOS:000175757400066; 2-s2.0-0036539891; 1134426200935790

الإتاحة: https://doi.org/10.1016/S0022-3093Test(01)01189-9
http://hdl.handle.net/11449/66858Test

المؤلفون: Martins, E., Gomes, M. V G, Bastida, E. M., Swart, J. W.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Front end receivers, Gilbert cell mixers, Low noise amplifiers, Pseudomorphic high electron mobility transistors, Amplifiers (electronic), Buffer circuits, Computer simulation, Electric network topology, High electron mobility transistors, Mixer circuits, Monolithic microwave integrated circuits, Semiconducting gallium arsenide, Signal receivers, Integrated circuit layout

وصف الملف: 267-270

العلاقة: SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings; http://dx.doi.org/10.1109/IMOC.1999.867106Test; SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.; http://hdl.handle.net/11449/65955Test; 2-s2.0-0033295721

الإتاحة: https://doi.org/10.1109/IMOC.1999.867106Test
http://hdl.handle.net/11449/65955Test

المؤلفون: Barth, Sven, Hernandez-Ramirez, Francisco, Holmes, Justin D., Romano-Rodriguez, Albert

مصطلحات موضوعية: Semiconductor growth, Aspect ratio, Cadmium, Crystal structure, Crystals, Film growth, Gallium alloys, Gallium arsenide, Gallium nitride, Germanium oxides, Lithium, Nanobelts, Nanowires, Semiconducting gallium arsenide, Semiconducting germanium, Semiconducting silicon, Semiconducting silicon compounds, Semiconductor doping, Semiconductor quantum dots, Tin, Titanium compounds, Zinc, Zinc oxide, Zinc sulfide

وصف الملف: application/pdf

العلاقة: info:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/; info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/247768/EU/Surface ionization and novel concepts in nano-MOX gas sensors with increased Selectivity, Sensitivity and Stability for detection of low concentrations of toxic and explosive agents./S3; 08 CE I1432; http://www.sciencedirect.com/science/article/pii/S0079642510000149Test; Barth, S., Hernandez-Ramirez, F., Holmes, J. D. and Romano-Rodriguez, A. (2010) 'Synthesis and applications of one-dimensional semiconductors', Progress in Materials Science, 55(6), pp. 563-627.; 627; Progress in Materials Science; 563; http://hdl.handle.net/10468/6645Test; 55

الإتاحة: https://doi.org/10.1016/j.pmatsci.2010.02.001Test
http://hdl.handle.net/10468/6645Test

المؤلفون: Yang, M, Wang, J, Xu, SJ

مصطلحات موضوعية: Wetting, Indium arsenide, Interfaces (materials), Semiconducting gallium arsenide, Strain

العلاقة: Applied Physics Letters; http://www.scopus.com/mlt/select.url?eid=2-s2.0-40049090825&selection=ref&src=s&origin=recordpageTest; Applied Physics Letters, 2008, v. 92 n. 8; 141607; WOS:000254297300082; eid_2-s2.0-40049090825; http://hdl.handle.net/10722/80694Test; 92

الإتاحة: https://doi.org/10.1063/1.2841065Test
http://hdl.handle.net/10722/80694Test