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1
المؤلفون: Ekström, Mattias, Zetterling, Carl-Mikael, 1966
المصدر: Materials Science in Semiconductor Processing. 168
مصطلحات موضوعية: Ion implantation, Salicide, SiC, Simultaneous contacts
وصف الملف: print
الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-338074Test
https://doi.org/10.1016/j.mssp.2023.107849Test -
2دورية أكاديمية
المصدر: IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-7 (2023)
مصطلحات موضوعية: Al grating, CMOS process, microbolometer, resonant cavity, salicide poly-Si thermistors, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Yaozu Guo, Haolan Ma, Jiang Lan, Yiming Liao, Xiaoli Ji
المصدر: Micromachines; Volume 13; Issue 11; Pages: 1869
مصطلحات موضوعية: salicide polysilicon thermistor, microbolometers, standard CMOS process, uncooled infrared detector
وصف الملف: application/pdf
العلاقة: E:Engineering and Technology; https://dx.doi.org/10.3390/mi13111869Test
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4
المؤلفون: Jayakumar, Ganesh, 1987
المساهمون: Hellström, Per-Erik, 1970, Östling, Mikael, Selmi, Luca, Professor
المصدر: TRITA-EECS-AVL.
مصطلحات موضوعية: silicon nanowire, biosensor, CMOS, sequential integration, lab-on-chip, LOC, high-K, high-K integration on SiNW biosensor, ALD, fluid gate, back gate, SiNW, SiNW pixel matrix, FEOL, pattern transfer lithography, sidewall transfer lithography, STL, multi-target bio detection, BEOL, nanonets, silicon nanonets, SiNN-FET, SiNW-FET, CMOS integration of nanowires, CMOS integration of nanonets, monolithic 3D integration of nanowires, above-IC integration of nanowires, DNA detection using SiNW, SiNW biosensor, dry environment DNA detection, DNA hybridization detection using SiNW, SiNW functionalization, SiNW silanization, SiNW grafting, FEOL integration of SiNW, BEOL integration of SiNW, sequential multiplexed biodetection, biodetection efficiency of SiNW, front end of line integration of SiNW, back end of line integration of SiNW, SiNW dry environment functionalization, APTES cross-linker, accessing SiNW test site, fluorescence microscopy of SiNW, geometry of SiNW, SiNW biosensor variability, top-down fabrication of SiNW, bottom-up fabrication of SiNW, VLS method, ams foundry CMOS process, adding functionality in BEOL process, sensor integration in BEOL process, hafnium oxide, HfO2, aluminium oxide, Al2O3, TiN backgate, Nickel source/drain, ISFET, ion sensitive field effect transistor, Overcoming Nernst limit of detection using SiNW, SiNW sub-threshold region operation, ASIC, SOC, SiGe selective epitaxy, epitaxial growth of SiNW, epitaxial growth of nanowires, epitaxial growth of nanonets, nickel silicide contacts, salicide process, high yield SiNW fabrication, high volume SiNW fabrication, silicon ribbon, SiRi pixel, SiRi biosensor, SiRi DNA detection, monolithic 3D integration of nanonets, above-IC integration of nanonets, impact of back gate voltage on silicon nanowire, impact of back gate voltage on SiNW, FDSOI, fully depleted silicon on insulator technology, metal backgate, wafer scale integration of SiNW, wafer scale integration of nanonets, impact of backgate voltage on CMOS inverter circuit, frequency divider, D flip-flop, Informations- och kommunikationsteknik, Information and Communication Technology
وصف الملف: electronic
الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-234918Test
https://scholar.google.se/citations?user=uu6UyEIAAAAJ&hl=en&oi=sraTest
https://kth.diva-portal.org/smash/get/diva2:1252014/FULLTEXT01.pdfTest
https://kth.diva-portal.org/smash/get/diva2:1252014/COVER01.tiffTest
https://kth.diva-portal.org/smash/get/diva2:1252014/FULLTEXT02.pdfTest
https://kth.diva-portal.org/smash/get/diva2:1252014/FULLTEXT03.mp4Test -
5
المؤلفون: Elahipanah, Hossein, 1982
المساهمون: Östling, Mikael, Professor, Zetterling, Carl-Mikael, Professor, Hallèn, Anders, Professor, Schöner, Adolf, Dr., Kimoto, Tsunenobu, Professor
المصدر: TRITA-ICT.
مصطلحات موضوعية: 4H-SiC, BJT, high-voltage and ultra-high-voltage, high-temperature, self-aligned Ni-silicide (Ni-SALICIDE), lift-off-free, wafer-scale, current gain, Darlington, Electrical Engineering, Elektro- och systemteknik, Informations- och kommunikationsteknik, Information and Communication Technology
وصف الملف: electronic
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6
المؤلفون: Chunwei Xie, Xiaojin Zhao, Wei He, Xiaofang Pan, Feng Zhang, Tingting Xu
المصدر: IEEE Transactions on Electron Devices. 68:3702-3705
مصطلحات موضوعية: Materials science, business.industry, Contact resistance, Transistor, Physical unclonable function, Salicide, Electronic, Optical and Magnetic Materials, Resistive random-access memory, law.invention, Operating temperature, law, Bit error rate, Optoelectronics, NIST, Electrical and Electronic Engineering, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::a9c3cbf19788cb78280e71e235554531Test
https://doi.org/10.1109/ted.2021.3077343Test -
7
المؤلفون: E. Gebreselasie, A. Loiseau, I. McCallum-Cook, Yves Ngu
المصدر: IEEE Transactions on Semiconductor Manufacturing. 33:331-336
مصطلحات موضوعية: 0209 industrial biotechnology, Materials science, business.industry, 02 engineering and technology, BiCMOS, Condensed Matter Physics, Salicide, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials, Safe operating area, 020901 industrial engineering & automation, CMOS, MOSFET, Fuse (electrical), Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Transmission-line pulse
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::4ca91fed5bd30186247ead73ee9f9364Test
https://doi.org/10.1109/tsm.2020.2991373Test -
8
المؤلفون: Horng-Chih Lin, Guo-Wei Huang, Kun-Ming Chen, C. Y. Liang, Yu-En Huang, Pei-Wen Li, K.-P. Peng
المصدر: IEEE Electron Device Letters. 41:397-400
مصطلحات موضوعية: 010302 applied physics, Materials science, Fabrication, business.industry, Doping, Transistor, technology, industry, and agriculture, Salicide, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Etching (microfabrication), Thin-film transistor, law, 0103 physical sciences, Optoelectronics, Production (computer science), Electrical and Electronic Engineering, business, Deposition (law)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::85ca276d8963d9c2c653fa4046875103Test
https://doi.org/10.1109/led.2020.2970756Test -
9دورية أكاديمية
المؤلفون: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Elgomati, H.A, Majlis, B.Y.
المصدر: Journal of Telecommunication, Electronic and Computer Engineering (JTEC); Vol 2, No 1; 35-41 ; 2289-8131 ; 2180-1843
مصطلحات موضوعية: 45nm NMOS, S/D Implant, SALICIDE, Taguchi Method
وصف الملف: application/pdf
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10
المؤلفون: Xiao Ping Dai, Tomasz Sledziewski, Tobias Erlbacher, Anton J. Bauer, Yan Li Zhao, Lothar Frey, Cheng Zhan Li, Xi Ming Chen
المصدر: Materials Science Forum. 963:490-493
مصطلحات موضوعية: Fabrication, Materials science, business.industry, Mechanical Engineering, Condensed Matter Physics, Salicide, Lift (force), Nickel silicide, Mechanics of Materials, Self alignment, MOSFET, Optoelectronics, General Materials Science, Power MOSFET, business, Ohmic contact
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::6b8b70e77c6f7ed853afb06587d587f7Test
https://doi.org/10.4028/www.scientific.net/msf.963.490Test