-
1دورية أكاديمية
المؤلفون: Saha, Bishwadeep, Fregonese, Sébastien, Heinemann, Bernd, Scheer, Patrick, Chevalier, Pascal, Aufinger, Klaus, Chakravorty, Anjan, Zimmer, Thomas
المساهمون: Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Indian Institute of Technology Madras (IIT Madras), IHP - Leibniz-Institut für innovative Mikroelektronik, STMicroelectronics Crolles (ST-CROLLES), Infineon Technologies, French nouvelle Aquitaine Authorities through the FAST project, The research leading to these results has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement no. 737454, project “TARANTO”., respective Public Authorities of France, Austria, Germany, Greece, Italy, and Belgium, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017)
المصدر: ISSN: 0741-3106 ; IEEE Electron Device Letters ; https://hal.archives-ouvertes.fr/hal-03111195Test ; IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2021, 42 (1), pp.14-17. ⟨10.1109/LED.2020.3040891⟩.
مصطلحات موضوعية: SiGe HBTs, MOS, y-parameters, maximum oscillation frequency, analytical modeling, small-signal model, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
العلاقة: info:eu-repo/grantAgreement//737454/EU/TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns/TARANTO; hal-03111195; https://hal.archives-ouvertes.fr/hal-03111195Test; https://hal.archives-ouvertes.fr/hal-03111195/documentTest; https://hal.archives-ouvertes.fr/hal-03111195/file/final_submitted_draft__clean_copy.pdfTest
الإتاحة: https://doi.org/10.1109/LED.2020.3040891Test
https://hal.archives-ouvertes.fr/hal-03111195Test
https://hal.archives-ouvertes.fr/hal-03111195/documentTest
https://hal.archives-ouvertes.fr/hal-03111195/file/final_submitted_draft__clean_copy.pdfTest -
2دورية أكاديمية
المؤلفون: Saha, Bishwadeep, Fregonese, Sebastien, Chakravorty, Anjan, Panda, Soumya Ranjan, Zimmer, Thomas
المساهمون: Indian Institute of Technology Madras (IIT Madras), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1
المصدر: ISSN: 0883-4989 ; Electronics ; https://hal.archives-ouvertes.fr/hal-03273304Test ; Electronics, Penton Publishing Inc., 2021, 10 (12), pp.1397. ⟨10.3390/electronics10121397⟩.
مصطلحات موضوعية: NQS effects, transients, compact model, TCAD, HICUM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
العلاقة: hal-03273304; https://hal.archives-ouvertes.fr/hal-03273304Test; https://hal.archives-ouvertes.fr/hal-03273304/documentTest; https://hal.archives-ouvertes.fr/hal-03273304/file/electronics-10-01397-1.pdfTest
الإتاحة: https://doi.org/10.3390/electronics10121397Test
https://hal.archives-ouvertes.fr/hal-03273304Test
https://hal.archives-ouvertes.fr/hal-03273304/documentTest
https://hal.archives-ouvertes.fr/hal-03273304/file/electronics-10-01397-1.pdfTest -
3
المؤلفون: Saha, Bishwadeep
المساهمون: Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université de Bordeaux, Indian Institute of technology (Chennai, Inde), Thomas Zimmer, Anjan Chakravorty, STAR, ABES
المصدر: Electronics. Université de Bordeaux; Indian Institute of technology (Chennai, Inde), 2021. English. ⟨NNT : 2021BORD0250⟩
مصطلحات موضوعية: SiGe HBT, Impédance de sortie, TCAD, Output impedance, FMAX, High frequency effects, HICUM, Effets haute fréquence, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::36f563e0811ba213b9f92b4173208efbTest
https://tel.archives-ouvertes.fr/tel-03506299/file/SAHA_BISHWADEEP_2021.pdfTest -
4رسالة جامعية
المؤلفون: Saha, Bishwadeep
المساهمون: Bordeaux, Indian Institute of technology (Chennai, Inde), Zimmer, Thomas, Chakravorty, Anjan
مصطلحات موضوعية: SiGe HBT, FMAX, Impédance de sortie, Effets haute fréquence, TCAD, HICUM, Output impedance, High frequency effects
-
5مؤتمر
المساهمون: Université de Bordeaux (UB), Indian Institute of Technology Madras (IIT Madras), Centre National de la Recherche Scientifique (CNRS), D. Céli, FAST, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017)
المصدر: AKB: BIPOLAR Working Group ; https://hal.archives-ouvertes.fr/hal-02372737Test ; AKB: BIPOLAR Working Group, D. Céli, Nov 2019, Crolles, France ; https://www.intento-design.com/2019/11/18/akb-2019-bipolar-workshopTest/
مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
العلاقة: info:eu-repo/grantAgreement//737454/EU/TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns/TARANTO; hal-02372737; https://hal.archives-ouvertes.fr/hal-02372737Test
-
6مؤتمر
المؤلفون: Saha, Bishwadeep, Frégonèse, Sébastien, Panda, Soumya Ranjan, Chakravorty, Anjan, Celi, Didier, Zimmer, Thomas
المساهمون: Université de Bordeaux (UB), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Indian Institute of Technology Madras (IIT Madras), STMicroelectronics Crolles (ST-CROLLES), NANOELECTRONIQUE/MODEL, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, FAST, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017)
المصدر: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
https://hal.archives-ouvertes.fr/hal-02532693Test
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, France. pp.1-4, ⟨10.1109/BCICTS45179.2019.8972745⟩مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
العلاقة: info:eu-repo/grantAgreement//737454/EU/TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns/TARANTO; hal-02532693; https://hal.archives-ouvertes.fr/hal-02532693Test
الإتاحة: https://doi.org/10.1109/BCICTS45179.2019.8972745Test
https://hal.archives-ouvertes.fr/hal-02532693Test -
7دورية أكاديمية
المؤلفون: Saha, Bishwadeep, Fregonese, Sebastien, Heinemann, Bernd, Scheer, Patrick, Chevalier, Pascal, Aufinger, Klaus, Chakravorty, Anjan, Zimmer, Thomas
المصدر: IEEE Electron Device Letters; Jan2021, Vol. 42 Issue 1, p14-17, 4p
مصطلحات موضوعية: TRANSISTORS, METAL oxide semiconductor field-effect transistors, MEASUREMENT errors, FREQUENCIES of oscillating systems, HETEROJUNCTION bipolar transistors, ELECTRIC admittance measurement
-
8رسالة جامعية
المؤلفون: SAHA, Bishwadeep
المساهمون: Zimmer, Thomas, Chakravorty, Anjan, Pascal, Fabien, Ferrari, Philippe, Frégonèse, Sébastien, Mahapatra, Nihar Ranjan
مصطلحات موضوعية: SiGe HBT, FMAX, Impédance de sortie, Effets haute fréquence, TCAD, HICUM, Output impedance, High frequency effects
العلاقة: http://www.theses.fr/2021BORD0250/abesTest; https://tel.archives-ouvertes.fr/tel-03506299Test; https://oskar-bordeaux.fr/handle/20.500.12278/124533Test; 2021BORD0250
