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1تقرير
المؤلفون: Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., Meneghini, M.
مصطلحات موضوعية: Physics - Applied Physics
الوصول الحر: http://arxiv.org/abs/2210.10558Test
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2تقرير
المؤلفون: Gao, Z., Rampazzo, F., Meneghini, M., De Santi, C., Chiocchetta, F., Marcon, D., Meneghesso, G., Zanoni, E.
المصدر: Microelectronics Reliability, Volume 114, 2020, 113905
مصطلحات موضوعية: Physics - Applied Physics
الوصول الحر: http://arxiv.org/abs/2107.08413Test
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3تقرير
المؤلفون: Gao, Z., Meneghini, M., Rampazzo, F., Rzin, M., De Santi, C., Meneghesso, G., Zanoni, E.
المصدر: Microelectronics Reliability, Volumes 100-101, 2019, 113489
مصطلحات موضوعية: Physics - Applied Physics
الوصول الحر: http://arxiv.org/abs/2107.08412Test
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4دورية أكاديمية
المؤلفون: Fusco G., Motta M., Rampazzo F.
المساهمون: Fusco, G., Motta, M., Rampazzo, F.
مصطلحات موضوعية: Lyapunov function, Asymptotic stabilizability, Discontinuous feedback law, Optimal control, Lie brackets
وصف الملف: STAMPA
العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:001032494800001; volume:88; issue:2; journal:APPLIED MATHEMATICS AND OPTIMIZATION; https://hdl.handle.net/11577/3494655Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85165235046; https://link.springer.com/article/10.1007/s00245-023-10041-1Test
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5دورية أكاديميةDynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect
المؤلفون: Gao, Z, De Santi, C, Rampazzo, F, Saro, M, Fornasier, M, Meneghesso, G, Meneghini, M, Chini, A, Verzellesi, G, Zanoni, E
المساهمون: Gao, Z, De Santi, C, Rampazzo, F, Saro, M, Fornasier, M, Meneghesso, G, Meneghini, M, Chini, A, Verzellesi, G, Zanoni, E
مصطلحات موضوعية: Current collapse, deep level, GaN HEMT, GaN reliability, kink effect
العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:001103666200001; volume:70; issue:12; firstpage:6256; lastpage:6261; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11380/1328286Test
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6دورية أكاديمية
المؤلفون: Nicoletto M., Caria A., Rampazzo F., De Santi C., Buffolo M., Mura G., Rossi F., Huang X., Fu H., Chen H., Zhao Y., Meneghesso G., Zanoni E., Meneghini M.
المساهمون: Nicoletto, M., Caria, A., Rampazzo, F., De Santi, C., Buffolo, M., Mura, G., Rossi, F., Huang, X., Fu, H., Chen, H., Zhao, Y., Meneghesso, G., Zanoni, E., Meneghini, M.
مصطلحات موضوعية: Voltage, Quantum well device, Scanning electron microscopy, Transmission electron microscopy, Silicon, Photovoltaic cell, Indium tin oxide, Experimental, GaN, InGaN, Modeling, Multiple-quantum-well, Solar cell, V-pits
العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:001071998500001; volume:13; issue:6; firstpage:891; lastpage:898; numberofpages:8; journal:IEEE JOURNAL OF PHOTOVOLTAICS; https://hdl.handle.net/11584/388083Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85171773703; https://ieeexplore.ieee.org/document/10252136Test
الإتاحة: https://doi.org/10.1109/JPHOTOV.2023.3311891Test
https://hdl.handle.net/11584/388083Test
https://ieeexplore.ieee.org/document/10252136Test -
7دورية أكاديمية
المؤلفون: Leasure, DR, Kashyap, R, Rampazzo, F, Dooley, CA, Elbers, B, Bondarenko, M, Verhagen, M, Frey, A, Yan, J, Akimova, ET, Fatehkia, M, Trigwell, R, Tatem, AJ, Weber, I, Mills, MC
العلاقة: https://ora.ox.ac.uk/objects/uuid:a0a0e930-8802-41e5-acff-bbb3d7336c5fTest; https://doi.org/10.1111/padr.12558Test
الإتاحة: https://doi.org/10.1111/padr.12558Test
https://ora.ox.ac.uk/objects/uuid:a0a0e930-8802-41e5-acff-bbb3d7336c5fTest -
8دورية أكاديمية
المؤلفون: Pilati, M., Buffolo, M., Rampazzo, F., Lambert, B., Sommer, D., Grünenpütt, J., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.
المساهمون: Electronic Components and Systems for European Leadership, ECSEL
المصدر: Microelectronics Reliability ; volume 150, page 115131 ; ISSN 0026-2714
مصطلحات موضوعية: Electrical and Electronic Engineering, Surfaces, Coatings and Films, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
الإتاحة: https://doi.org/10.1016/j.microrel.2023.115131Test
https://api.elsevier.com/content/article/PII:S0026271423002317?httpAccept=text/xmlTest
https://api.elsevier.com/content/article/PII:S0026271423002317?httpAccept=text/plainTest -
9دورية أكاديمية
المؤلفون: Zanoni E., Rampazzo F., De Santi C., Gao Z., Sharma C., Modolo N., Verzellesi G., Chini A., Meneghesso G., Meneghini M.
المساهمون: Zanoni, E., Rampazzo, F., De Santi, C., Gao, Z., Sharma, C., Modolo, N., Verzellesi, G., Chini, A., Meneghesso, G., Meneghini, M.
مصطلحات موضوعية: degradation, failure mechanism, gallium nitride, HEMT, microwave, millimeter-wave, reliability
العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:000889904800001; volume:219; issue:24; firstpage:1; lastpage:12; journal:PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE; https://hdl.handle.net/11380/1295218Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85143241157
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