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1مؤتمر
المؤلفون: Schattenburg, Mark L., Aucoin, Richard J., Fleming, Robert C., Plotnik, Irving, Porter, Jeanne, Smith, Henry I.
المساهمون: Siegmund, Oswald H. W., Vallerga, John V.
المصدر: SPIE Proceedings ; EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy V ; ISSN 0277-786X
الإتاحة: https://doi.org/10.1117/12.186810Test
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=972673Test -
2مؤتمر
المؤلفون: Stewart, Diane K., Fuchs, Jacob, Grant, Robert A., Plotnik, Irving
المساهمون: Peckerar, Martin C.
المصدر: SPIE Proceedings ; Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing ; ISSN 0277-786X
الإتاحة: https://doi.org/10.1117/12.47344Test
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3دورية أكاديمية
المؤلفون: Ku, Yao C., Smith, Henry I., Plotnik, Irving
المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 6, p2174-2177, 4p
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4تقرير
المؤلفون: Anderson, Erik H., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ku, Yao-Ching, Quek, Hui Meng, Moel, Alberto, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Plotnik, Irving, Kawata, Hiroaki, Antoniadis, Dimitri A., Field, Stuart B., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Meyer, Paul, Shahidi, Ghavam G., The, Siang-Chun, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., III, Palmer, Joyce E., Canizares, Claude R.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Optical Projection Lithography Using Lenses of High Numerical Aperture, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 0.2μm-Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Electron Transport In Si MOSFETs With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988; Solid State Physics, Electronics And Optics; Materials and Fabrication; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131; RLE_PR_131_01_01s_01; http://hdl.handle.net/1721.1/57073Test
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5تقرير
المؤلفون: Anderson, Erik H., Chu, William, Plotnik, Irving, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Warren, Alan C., Antoniadis, Dimitri A., Orlando, Terry P., Melngailis, John, Chou, Stephen Y., Shahidi, Ghavam G., Licini, Jerome C., Scott-Thomas, John H. F., Park, Samuel L., Kastner, Marc A., Atwater, Harry A., Garrison, Stephen M., Palmer, Joyce E., Quek, Hui Meng, Wong, Chee C., Thompson, Carl V., Canizaares, Claude C., Stein, Josephine A., Summa, Deborah A., Paynter, Henry M., Rajchman, Jan A., Tse, Ming K.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Corrugated Gate MOS Structures, MOSFET's in Si with Deep-Submicron Channel Lengths, Electronic Conduction in Submicron Silicon Inversion Layers, Crystalline Films on Amorphous Substrates, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings, Switchable Zero Order Diffraction Grating Light Valves
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128; RLE_PR_128_01; http://hdl.handle.net/1721.1/56948Test
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6تقرير
المؤلفون: Anderson, Erik H., Carter, James M., Chu, William, Quek, Hui Meng, Plotnik, Irving, Schattenburg, Mark L., Yen, Anthony T., Smith, Henry I., Ku, Yao-C., Field, S. B., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Antoniadis, Dimitri A., Kastner, Marc A., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Shahidi, Ghavam G., Ajuria, Sergio, Atwater, Harry A., Floro, Jerrold A., Thompson, Carl V., Palmer, Joyce E., Canizares, Claude R.
مصطلحات موضوعية: Submicron Structures Technology and Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Theoretical Analysis Of The Lithography Process, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 200 μm Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, Investigation of One-Dimensional Conductivity in Multiple, Parallel Inversion Lines, Electron Transport In MOSFET's In Si With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Ion-Bombardment-Enhanced Grain Growth In Thin Films, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1987; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 130; RLE_PR_130_01; http://hdl.handle.net/1721.1/57036Test
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7تقرير
المؤلفون: Anderson, Erik H., Plotnik, Irving, Schattenburg, Mark L., Melngailis, John, Smith, Henry I., Kwasnick, Robert F., Licini, Jerome C., Kastner, Marc A., Lee, Patrick A., Warren, Alan C., Antoniadis, Dimitri A., Chou, Stephen Y., Shahidi, Ghavam G., Ippen, Erich P., Palmer, Joyce E., Wong, Chee C., Yonehara, Takao, Garrison, Stephen M., Atwater, Harry A., Thompson, Carl V., Schott, Stephen C., Canizares, Claude R., Stein, Josephine A., Summa, Deborah A., Rajchman, Jan A., Paynter, Henry M., Chen, Dong-Pei, Haus, Hermann A.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Electronic Conduction in Ultra-Narrow Silicon Inversion Layers, Corrugated Gate MOS Structures, Submicron FET's in Si, Submicron-Gap High-Mobility Silicon Picosecond Photodetectors, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Zone-Melting Recrystallization of Si for Solar Cells, Integration of Si and Ill-V Materials, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Display Based on Switchable Zero Order Diffraction Grating Light Valves, Surface Acoustic Wave Propagation in Gratings, Near IR Grating Polarizers
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_01; http://hdl.handle.net/1721.1/56933Test