التفاصيل البيبلوغرافية
| العنوان: |
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy |
| المؤلفون: |
Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China. |
| سنة النشر: |
2000 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Si Growth Rate, p Doping, Ph3 Flow Rate, p Segregation, Gsmbe, Chemical-vapor-deposition, Si1-xgex, Phosphorus, Si2h6, Disilane, Si(100), Mbe, 半导体材料, atomic layer deposition, chemical vapor deposition, vapor-plating, bore, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, cvd |
| الوصف: |
As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY .Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465; http://ir.semi.ac.cn/handle/172111/12338Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/12338Test |
| رقم الانضمام: |
edsbas.B659859B |
| قاعدة البيانات: |
BASE |
