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1دورية أكاديمية
المصدر: Japanese Journal of Applied Physics ; volume 32, issue 4A, page L476 ; ISSN 0021-4922 1347-4065
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2دورية أكاديمية
المصدر: Japanese Journal of Applied Physics ; volume 32, issue 8B, page L1126 ; ISSN 0021-4922 1347-4065
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3دورية أكاديمية
المؤلفون: BIGNALL, KEITH E., HEGGENESS, FRANKLIN W., PALMER, JOYCE E.
المصدر: American Journal of Physiology: Regulatory, Integrative & Comparative Physiology; Jul1977, Vol. 2 Issue 1, pR23-R29, 7p
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4تقرير
المؤلفون: Anderson, Erik H., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ku, Yao-Ching, Quek, Hui Meng, Moel, Alberto, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Plotnik, Irving, Kawata, Hiroaki, Antoniadis, Dimitri A., Field, Stuart B., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Meyer, Paul, Shahidi, Ghavam G., The, Siang-Chun, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., III, Palmer, Joyce E., Canizares, Claude R.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Optical Projection Lithography Using Lenses of High Numerical Aperture, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 0.2μm-Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Electron Transport In Si MOSFETs With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988; Solid State Physics, Electronics And Optics; Materials and Fabrication; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131; RLE_PR_131_01_01s_01; http://hdl.handle.net/1721.1/57073Test
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5تقرير
المؤلفون: Kim, Hyoung-June, Palmer, Joyce E., Thompson, Carl V., Smith, Henry I., Jiran, Eva, Atwater, Harry A., Schott, Stephen C., Wong, Chee C., Garrison, Stephen M., Im, James S., Smith, David A., Frost, Harold J., Srolovitz, David J., Maiorino, Cesar D., Privost, Larry, Clevenger, Lawrence A., Tu, King-Ning
مصطلحات موضوعية: Kinetic Phenomena in Thin Film Electronic Materials, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Zone Melting Recrystallization of Silicon Films, Zone Melting Recrystallization of Germanium Films, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Modeling of Grain Formation in Thin Films, Modeling of Grain Growth in Thin Films, Modeling of Beading in Thin Films, Grain Growth in Thin Films, Grain Growth in Thin Films Lines, Electrical Properties of Interconnect Lines with Controlled Microstructures, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Kinetic Phenomena in Thin Film Electronic Materials; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_02; http://hdl.handle.net/1721.1/56928Test
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6تقرير
المؤلفون: Anderson, Erik H., Chu, William, Plotnik, Irving, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Warren, Alan C., Antoniadis, Dimitri A., Orlando, Terry P., Melngailis, John, Chou, Stephen Y., Shahidi, Ghavam G., Licini, Jerome C., Scott-Thomas, John H. F., Park, Samuel L., Kastner, Marc A., Atwater, Harry A., Garrison, Stephen M., Palmer, Joyce E., Quek, Hui Meng, Wong, Chee C., Thompson, Carl V., Canizaares, Claude C., Stein, Josephine A., Summa, Deborah A., Paynter, Henry M., Rajchman, Jan A., Tse, Ming K.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Corrugated Gate MOS Structures, MOSFET's in Si with Deep-Submicron Channel Lengths, Electronic Conduction in Submicron Silicon Inversion Layers, Crystalline Films on Amorphous Substrates, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings, Switchable Zero Order Diffraction Grating Light Valves
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128; RLE_PR_128_01; http://hdl.handle.net/1721.1/56948Test
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7تقرير
المؤلفون: Kim, Hyoung-June, Palmer, Joyce E., Atwater, Harry A., Garrison, Stephen M., Quek, Hui Meng, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., Smith, Henry I., Wong, Chee C., Im, James S., Tomita, Hisashi, Smith, David A., Jiran, Eva, Cammarata, Robert C., Clevenger, Lawrence A., Tu, King-Ning, Maiorino, Cesar D., Longworth, Hai P., Cho, Jaeshin, Kahn, H., Frost, Harold J., Dubner, Andrew D., Ro, Jaesang, Melngailis, John
مصطلحات موضوعية: Kinetic Phenomena in Thin Film Electronic Materials, Normal Grain Growth in Ultrathin (˂1000 Å) Films of Silicon, Normal Grain Growth in Ultrathin (˂1000 Å) Films of Germanium, Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Silicon, Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Germanium, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Epitaxy via Surface-Energy-Driven Grain Growth, Zone Melting Recrystallization of Silicon on Insulators, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts, Grain Growth in Thin Films of Aluminum, Thin Metallic Interconnects, Narrow Metallic Interconnects, Electromigration at Aluminum-Silicon Contacts in Integrated Circuits, Computer Modeling of Microstructural Evolution in Thin Films, Focussed Ion Beam Induced Deposition
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1987; Kinetic Phenomena in Thin Film Electronic Materials; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 129; RLE_PR_129_02; http://hdl.handle.net/1721.1/56995Test
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8تقرير
المؤلفون: Ajuria, Sergio, Quek, Hui Meng, Thompson, Carl V., III, Smith, Henry I., Frost, Harold J., Floro, Jerrold A., Liu, Yauchin, Palmer, Joyce E., Chong, Tow, Fonstad, Clifton G., Jr., Im, James S., Chen, Chenson K., Jiran, Eva, Clevenger, Lawrence A., DeAvillez, Roberto R., Cammarata, Robert C., Judas, Andreas, Olson, John, Tu, King-Ning, Gosele, Ulrich, Cho, Jaeshin, Kahn, Hal, Longworth, Hai P., Ro, Jaesang, Dubner, Andrew D., Melngailis, John
مصطلحات موضوعية: Microstructural Evolution in Thin Films of Electronic Materials, Grain Growth in Thin Films, Modelling of Microstructural Evolution in Thin Films, Post-Nucleation Heteroepitaxy in Lattice Mismatched Systems, Thin Film Zone Melting Recrystallization of Silicon, Capillary Instabilities in Thin Solid Films, Kinetics of Thin Film Silicide Formation, Reliability and Microstructures of Interconnects, Focused Ion Beam Induced Deposition
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988; Solid State Physics, Electronics And Optics; Materials and Fabrication; Microstructural Evolution in Thin Films of Electronic Materials; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131; RLE_PR_131_01_01s_02; http://hdl.handle.net/1721.1/57060Test
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9تقرير
المؤلفون: Anderson, Erik H., Carter, James M., Chu, William, Quek, Hui Meng, Plotnik, Irving, Schattenburg, Mark L., Yen, Anthony T., Smith, Henry I., Ku, Yao-C., Field, S. B., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Antoniadis, Dimitri A., Kastner, Marc A., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Shahidi, Ghavam G., Ajuria, Sergio, Atwater, Harry A., Floro, Jerrold A., Thompson, Carl V., Palmer, Joyce E., Canizares, Claude R.
مصطلحات موضوعية: Submicron Structures Technology and Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Theoretical Analysis Of The Lithography Process, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 200 μm Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, Investigation of One-Dimensional Conductivity in Multiple, Parallel Inversion Lines, Electron Transport In MOSFET's In Si With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Ion-Bombardment-Enhanced Grain Growth In Thin Films, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1987; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 130; RLE_PR_130_01; http://hdl.handle.net/1721.1/57036Test
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10تقرير
المؤلفون: Anderson, Erik H., Plotnik, Irving, Schattenburg, Mark L., Melngailis, John, Smith, Henry I., Kwasnick, Robert F., Licini, Jerome C., Kastner, Marc A., Lee, Patrick A., Warren, Alan C., Antoniadis, Dimitri A., Chou, Stephen Y., Shahidi, Ghavam G., Ippen, Erich P., Palmer, Joyce E., Wong, Chee C., Yonehara, Takao, Garrison, Stephen M., Atwater, Harry A., Thompson, Carl V., Schott, Stephen C., Canizares, Claude R., Stein, Josephine A., Summa, Deborah A., Rajchman, Jan A., Paynter, Henry M., Chen, Dong-Pei, Haus, Hermann A.
مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Electronic Conduction in Ultra-Narrow Silicon Inversion Layers, Corrugated Gate MOS Structures, Submicron FET's in Si, Submicron-Gap High-Mobility Silicon Picosecond Photodetectors, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Zone-Melting Recrystallization of Si for Solar Cells, Integration of Si and Ill-V Materials, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Display Based on Switchable Zero Order Diffraction Grating Light Valves, Surface Acoustic Wave Propagation in Gratings, Near IR Grating Polarizers
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_01; http://hdl.handle.net/1721.1/56933Test
