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1دورية أكاديمية
المؤلفون: Brieuc Verougstraete, Dieter Schuddinck, Jasper Lefevere, Gino V. Baron, Joeri F. M. Denayer
المصدر: Frontiers in Chemical Engineering, Vol 2 (2020)
مصطلحات موضوعية: zeolitic imidazolate framework-8, 3D-printed, monolith, adsorption, CO2, Technology, Chemical technology, TP1-1185
وصف الملف: electronic resource
العلاقة: https://www.frontiersin.org/articles/10.3389/fceng.2020.589686/fullTest; https://doaj.org/toc/2673-2718Test
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2
المؤلفون: R. Mathur, M. Bhargava, B. Cline, S. Salahuddin, A. Gupta, P. Schuddinck, J. Ryckaert, J. P. Kulkarni
المصدر: IEEE Transactions on Electron Devices. 69:1041-1047
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::9506005f769361454914ad6f564a058cTest
https://doi.org/10.1109/ted.2022.3143078Test -
3
المؤلفون: Pieter Weckx, Doyoung Jang, Bilal Chehab, Julien Ryckaert, Stefan Cosemans, Wim Dehaene, Mohit Kumar Gupta, P. Schuddinck
المصدر: IEEE Transactions on Electron Devices. 68:6106-6111
مصطلحات موضوعية: Static random-access memory, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::ebd5b62309149d8293473a033ac73bf8Test
https://doi.org/10.1109/ted.2021.3121349Test -
4دورية
المؤلفون: Liu, Hsiao-Hsuan, Schuddinck, Pieter, Pei, Zhenlin, Verschueren, Lynn, Mertens, Hans, Salahuddin, Shairfe M., Hiblot, Gaspard, Xiang, Yang, Chan, Boon Teik, Subramanian, Sujith, Weckx, Pieter, Hellings, Geert, Bardon, Marie Garcia, Ryckaert, Julien, Pan, Chenyun, Catthoor, Francky
المصدر: IEEE Transactions on Electron Devices; October 2023, Vol. 70 Issue: 10 p5099-5106, 8p
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5
المؤلفون: P. Schuddinck, Bilal Chehab, Doyoung Jang, Stefan Cosemans, Mohit Kumar Gupta, Wim Dehaene, Pieter Weckx, Julien Ryckaert
المصدر: IEEE Transactions on Electron Devices. 68:3819-3825
مصطلحات موضوعية: Physics, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Capacitance, Electronic, Optical and Magnetic Materials, Parasitic capacitance, Logic gate, Parasitic element, Node (circuits), Parasitic extraction, Static random-access memory, Electrical and Electronic Engineering, business, Leakage (electronics)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::45e5c89d118b6c604b4f590dcdaffad8Test
https://doi.org/10.1109/ted.2021.3088392Test -
6
المؤلفون: R. Chen, G. Sisto, M. Stucchi, A. Jourdain, K. Miyaguchi, P. Schuddinck, P. Woeltgens, H. Lin, N. Kakarla, A. Veloso, D. Milojevic, O. Zografos, P. Weckx, G. Hellings, G. Van Der Plas, J. Ryckaert, E. Beyne
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::8e8999a3bf4a73fc76a5aace1823e48eTest
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830328Test -
7
المؤلفون: P. Schuddinck, F. M. Bufler, Y. Xiang, A. Farokhnejad, G. Mirabelli, A. Vandooren, B. Chehab, A. Gupta, C. Roda Neve, G. Hellings, J. Ryckaert
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::70363470fcedf3502c8cc9d5349b5d4cTest
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830492Test -
8
المؤلفون: B. Vermeersch, E. Bury, Y. Xiang, P. Schuddinck, K. K. Bhuwalka, G. Hellings, J. Ryckaert
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::bffd91d657bdf6a01872425ffaf203dcTest
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830228Test -
9
المؤلفون: C. Gilardi, B. Chehab, G. Sisto, P. Schuddinck, Z. Ahmed, O. Zografos, Q. Lin, G. Hellings, J. Ryckaert, H.-S.P. Wong, S. Mitra
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::24b9ec97ec7f50c9c5a9108aec3a203aTest
https://doi.org/10.1109/iedm19574.2021.9720672Test -
10
المؤلفون: P. Schuddinck, Jerome Mitard, Bertrand Parvais, Doyoung Jang, Alessio Spessot, Geert Eneman, Nadine Collaert, Neha Sharan, F. M. Bufler, D. Yakimets, Marie Garcia Bardon, Hiroaki Arimura, Anda Mocuta, Khaja Ahmad Shaik
المساهمون: Electronics and Informatics
المصدر: IEEE Transactions on Electron Devices. 66:4997-5002
مصطلحات موضوعية: 010302 applied physics, Standard cell, Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Germanium, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, chemistry, law, Electrical resistivity and conductivity, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business, Scaling, Leakage (electronics), Nanosheet
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d70b918f94afcf9050344a8a13385dfdTest
https://doi.org/10.1109/ted.2019.2944336Test