دورية أكاديمية

Application of the detailed balance model to thermoradiative cells based on a p-type two-dimensional indium selenide semiconductor

التفاصيل البيبلوغرافية
العنوان: Application of the detailed balance model to thermoradiative cells based on a p-type two-dimensional indium selenide semiconductor
المؤلفون: Hanna, M. (Muhammad Yusrul ), Nugraha, A. (Ahmad R. T. ), Majidi, M. (Muhammad Aziz )
المصدر: SINERGI
بيانات النشر: Mercu Buana University
سنة النشر: 2022
المجموعة: neliti (Indonesia's Think Tank Database)
الوصف: Thermoradiative (TR) cells are energy conversion devices that convert low-temperature waste heat to electricity. TR cells work on the same principles as photovoltaics, but they produce a reverse bias voltage due to higher cell temperature than the environment temperature. Depending on the energy gap of the material, temperature difference would generate electrical energy by electron-hole pair recombination. In this work, we propose a two-dimensional (2D) InSe for applications in the TR cells. The electronic properties of 2D InSe are obtained by using first-principles calculations. Then, the calculated energy gap is used to estimate output power density and efficiency according to the Shockley-Queisser framework through a detailed balance model adapted with the TR cells. Using a heat source at T_c = 1000 K and the ambient temperature T_a = 300 K, an ideal TR cell of 2D InSe at the maximum power point can achieve output power density and efficiency up to 0.061 W/m2 and 4.41%, respectively, with an energy gap of 1.43 eV. However, sub-bandgap and non-radiative losses will degenerate the cell's performance significantly.
نوع الوثيقة: article in journal/newspaper
وصف الملف: application/pdf
اللغة: English
العلاقة: https://www.neliti.com/publications/355795/application-of-the-detailed-balance-model-to-thermoradiative-cells-based-on-a-pTest
الإتاحة: https://www.neliti.com/publications/355795/application-of-the-detailed-balance-model-to-thermoradiative-cells-based-on-a-pTest
حقوق: (c) SINERGI, 2022
رقم الانضمام: edsbas.443FAF59
قاعدة البيانات: BASE