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1دورية أكاديمية
المؤلفون: P. Vimala, N. B. Balamurugan
المصدر: IEEE Journal of the Electron Devices Society, Vol 2, Iss 1, Pp 1-7 (2014)
مصطلحات موضوعية: Device modeling, energy quantization, inversion charge, Poisson–Schrodinger equation, tri-gate MOSFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: M. Karthigai Pandian, N. B. Balamurugan, A. Pricilla
المصدر: Active and Passive Electronic Components, Vol 2013 (2013)
مصطلحات موضوعية: Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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3
المؤلفون: M. Suguna, V. Charumathi, N. B. Balamurugan, M. Hemalatha, D. Sriram Kumar
المصدر: Silicon. 14:11109-11119
مصطلحات موضوعية: Electronic, Optical and Magnetic Materials
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::26d88cc3a823aca6121453386e140342Test
https://doi.org/10.1007/s12633-022-01841-1Test -
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المؤلفون: M. Suguna, V. Charumathi, M. Hemalatha, N. B. Balamurugan, D. Sriram Kumar, P. Suveetha Dhanaselvam
المصدر: Silicon. 14:2389-2396
مصطلحات موضوعية: Electronic, Optical and Magnetic Materials
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b288fe7e0f9d6b4cbfdc92f6e6a4e1d9Test
https://doi.org/10.1007/s12633-022-01682-yTest -
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المؤلفون: R. Kaveri, M. Suguna, N. B. Balamurugan, V. A. Nithya Sree, M. Hemalatha
المصدر: Silicon. 14:2363-2371
مصطلحات موضوعية: Modeling and simulation, Surface (mathematics), symbols.namesake, Work (thermodynamics), Materials science, symbols, Power application, Poisson distribution, Tunnel field-effect transistor, Reduction (mathematics), Topology, Electronic, Optical and Magnetic Materials, Power (physics)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::4c8d4b2becd870b360f84b0578c8c0d3Test
https://doi.org/10.1007/s12633-021-01368-xTest -
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المؤلفون: S. Manikandan, N. B. Balamurugan
المصدر: Silicon. 14:4309-4316
مصطلحات موضوعية: 010302 applied physics, Materials science, Gaussian, Doping, Fin width, 02 engineering and technology, Physics based, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, Computational physics, symbols.namesake, Gate oxide, 0103 physical sciences, symbols, Work function, 0210 nano-technology, AND gate
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::6080c06bf8b962e18906ce5b58ea1f3eTest
https://doi.org/10.1007/s12633-021-01195-0Test -
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المؤلفون: D. Sriram Kumar, N. B. Balamurugan, V. N. Ramakrishnan, K. Ramkumar, P. Suveetha Dhanaselvam
المصدر: Silicon. 14:4121-4127
مصطلحات موضوعية: 010302 applied physics, Bioelectronics, Materials science, Fabrication, business.industry, Non-blocking I/O, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Pressure sensor, Heterojunction diode, Electronic, Optical and Magnetic Materials, Semiconductor, 0103 physical sciences, Optoelectronics, 0210 nano-technology, Electronic band structure, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::494f6aa789edcbd4bf2ca4d1c8e654c6Test
https://doi.org/10.1007/s12633-021-01177-2Test -
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المؤلفون: G. Lakshmi Priya, M. Venkatesh, S. Preethi, T. Venish Kumar, N. B. Balamurugan
المصدر: Emerging Low-Power Semiconductor Devices ISBN: 9781003240778
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::e9dfdf463ebf996765100b35efa54228Test
https://doi.org/10.1201/9781003240778-6Test -
9
المؤلفون: T. S. Arun Samuel, G. Lakshmi Priya, M. Venkatesh, N. B. Balamurugan
المصدر: Silicon. 13:1691-1702
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Ambipolar diffusion, business.industry, Gate dielectric, chemistry.chemical_element, Germanium, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, CMOS, Electric field, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Static random-access memory, 0210 nano-technology, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d60e2a1424daef0a1eff19d9a1ac0aa6Test
https://doi.org/10.1007/s12633-021-01075-7Test -
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المؤلفون: M. Venkatesh, N. B. Balamurugan, G. Lakshmi Priya
المصدر: Silicon. 13:911-918
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Transconductance, Doping, Gate dielectric, chemistry.chemical_element, Germanium, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Band diagram, Optoelectronics, Voltage source, 0210 nano-technology, business, Quantum tunnelling
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::ca312b5f1abcf2397b9c8b8aab295941Test
https://doi.org/10.1007/s12633-020-00856-wTest