المؤلفون: Schäfer, Christian Martin

مرشدي الرسالة: Garrido Ariza, José Antonio, Sort Viñas, Jordi

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Materials 2D, Materiales 2D, 2D materials, MoS2, MOCVD, Ciències Experimentals

وصف الملف: application/pdf

الوصول الحر: http://hdl.handle.net/10803/689757Test

المؤلفون: Vilasam, Aswani Gopakumar Saraswathy, Adhikari, Sonachand, Gupta, Bikesh, Balendhran, Sivacarendran, Higashitarumizu, Naoki, Tournet, Julie, Li, Lily, Javey, Ali, Crozier, Kenneth B, Karuturi, Siva, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: Nanotechnology. 34(49)

مصطلحات موضوعية: Physical Sciences, Engineering, Nanotechnology, Condensed Matter Physics, InAs, nanowires, MOCVD, van der waals epitaxy, polycrystalline thin film, MSD-General, MSD-EMAT, Nanoscience & Nanotechnology

وصف الملف: application/pdf

الوصول الحر: https://escholarship.org/uc/item/2xn4t9x3Test

المؤلفون: Zhang, Hengfang, Persson, Ingemar, Chen Jr., Tai, Papamichail, Alexis, Tran, Dat Q., Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

المصدر: Crystal Growth and Design NanoLund: Centre for Nanoscience. 23(2):1049-1056

مصطلحات موضوعية: N-polar GaN, polarity, TEM, MOCVD, Teknik, Materialteknik, Engineering and Technology, Materials Engineering

الوصول الحر: https://lup.lub.lu.se/record/36fcc436-27b9-49e1-84b4-de6347561b70Test
http://dx.doi.org/10.1021/acs.cgd.2c01199Test

المؤلفون: Tornberg, Marcus, Maliakkal, Carina B., Jacobsson, Daniel, Wallenberg, Reine, Dick, Kimberly A.

المصدر: Microscopy and Microanalysis NanoLund: Centre for Nanoscience. 28(5):1484-1492

مصطلحات موضوعية: electron microscopy, energy-dispersive spectroscopy, environmental-TEM, in situ, instrumentation, MOCVD, Naturvetenskap, Kemi, Materialkemi, Natural Sciences, Chemical Sciences, Materials Chemistry

الوصول الحر: https://lup.lub.lu.se/record/4e30ed96-65e0-46a5-82a3-6217b97fb20cTest
http://dx.doi.org/10.1017/S1431927622000769Test

المؤلفون: Kristina Bespalova, Glenn Ross, Sami Suihkonen, Mervi Paulasto‐Kröckel

المصدر: Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)

مصطلحات موضوعية: aluminum nitride (AlN), MOCVD, surface roughness, thin film, vertical sidewall, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

العلاقة: https://doaj.org/toc/2199-160XTest

الوصول الحر: https://doaj.org/article/113486a638c74e81aa8966a929e87e13Test

المؤلفون: Ilamparithy Selvakumar, Nils Boysen, Marco Bürger, Anjana Devi

المصدر: Chemistry, Vol 5, Iss 3, Pp 2038-2055 (2023)

مصطلحات موضوعية: copper, silver, ALD, MOCVD, N-coordinated precursors, Chemistry, QD1-999

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/2624-8549/5/3/138Test; https://doaj.org/toc/2624-8549Test

الوصول الحر: https://doaj.org/article/5d45f50b8d9a4effa1291d0ddd75a2a9Test

المؤلفون: Jacek M. Baranowski, Kinga Kosciewicz, Ewelina B. Mozdzynska, Julita Smalc-Koziorowska

المصدر: Crystals, Vol 14, Iss 6, p 541 (2024)

مصطلحات موضوعية: BGaN, growth mode, MOCVD epitaxy, Crystallography, QD901-999

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/2073-4352/14/6/541Test; https://doaj.org/toc/2073-4352Test

الوصول الحر: https://doaj.org/article/93bd8e7fa0d4408e80cc9c1d6d73e787Test

المؤلفون: Londoño-Calderon, Alejandra, Dhall, Rohan, Ophus, Colin, Schneider, Matthew, Wang, Yongqiang, Dervishi, Enkeleda, Kang, Hee Seong, Lee, Chul-Ho, Yoo, Jinkyoung, Pettes, Michael T

المصدر: Nano Letters. 22(6)

مصطلحات موضوعية: Engineering, Materials Engineering, Physical Sciences, 4D-STEM, 2D materials, grain boundaries, MOCVD, orientation, strain, Nanoscience & Nanotechnology

وصف الملف: application/pdf

الوصول الحر: https://escholarship.org/uc/item/3mh0858mTest

المؤلفون: Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M, P, Kret, S., Ruterana, P.

المساهمون: Slovak Academy of Science Bratislava (SAS), Institute of Physics Warsaw (IFPAN), Polska Akademia Nauk = Polish Academy of Sciences = Académie polonaise des sciences (PAN), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), VEGA under Grant Nos. 2/005/22 and 2/0068/21 and by APVV Agency under Grant No. APVV-21-0008

المصدر: ISSN: 0021-8979.

مصطلحات موضوعية: MOCVD growth, Electronic transport, Heterostructures, Quantum wells, Transistors, Crystallographic defects, Scanning electron microscopy, Transmission electron microscopy, Chemical vapor deposition, [PHYS]Physics [physics], [NLIN]Nonlinear Sciences [physics], [SPI]Engineering Sciences [physics]

العلاقة: hal-04625298; https://normandie-univ.hal.science/hal-04625298Test; https://normandie-univ.hal.science/hal-04625298/documentTest; https://normandie-univ.hal.science/hal-04625298/file/JAP24-AR-02254.pdfTest

الإتاحة: https://doi.org/10.1063/5.0215108Test
https://normandie-univ.hal.science/hal-04625298Test
https://normandie-univ.hal.science/hal-04625298/documentTest
https://normandie-univ.hal.science/hal-04625298/file/JAP24-AR-02254.pdfTest

المؤلفون: Bespalova, Kristina, Ross, Glenn, Suihkonen, Sami, Paulasto-Kröckel, Mervi

المصدر: Bespalova , K , Ross , G , Suihkonen , S & Paulasto-Kröckel , M 2024 , ' Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication ' , Advanced Electronic Materials , vol. 10 , no. 4 , 2300628 . https://doi.org/10.1002/aelm.202300628Test

مصطلحات موضوعية: aluminum nitride (AlN), MOCVD, surface roughness, thin film, vertical sidewall

العلاقة: https://cris.vtt.fi/en/publications/4901f1ad-3cfe-4adb-9018-ce5a6a468a74Test

الإتاحة: https://doi.org/10.1002/aelm.202300628Test
https://cris.vtt.fi/en/publications/4901f1ad-3cfe-4adb-9018-ce5a6a468a74Test
http://www.scopus.com/inward/record.url?scp=85182475091&partnerID=8YFLogxKTest