المؤلفون: Si Woo Lee

المصدر: Applied Surface Science Advances, Vol 16, Iss , Pp 100428- (2023)

مصطلحات موضوعية: Energy conversion, Hot electrons, Catalytic reactions, Metal-semiconductor junction, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2666523923000636Test; https://doaj.org/toc/2666-5239Test

الوصول الحر: https://doaj.org/article/4b850d54a6344990a268ba0907bb0b77Test

المؤلفون: Nag, Riya, Layek, Rama Kanta, Bera, Abhijit

المساهمون: Lappeenrannan-Lahden teknillinen yliopisto LUT, Lappeenranta-Lahti University of Technology LUT, fi=School of Engineering Science|en=School of Engineering Science

مصطلحات موضوعية: MXene nanosheets, metal−semiconductor junction, transparent electrode, layer-by-layer self-assembly, Fermi-level pinning, scanning tunneling spectroscopy

وصف الملف: fulltext; 17939-17948

العلاقة: ACS Applied Nano Materials; 12; https://doi.org/10.1021/acsanm.2c03916Test; Nag, R., Layek, R. K., Bera, A. (2022). Functionalized MXene Nanosheets and Al-Doped ZnO Nanoparticles for Flexible Transparent Electrodes. ACS Applied Nano Materials, vol. 5, issue 12. pp. 17939-17948. DOI:10.1021/acsanm.2c03916; https://lutpub.lut.fi/handle/10024/165113Test; URN:NBN:fi-fe202301091927

الإتاحة: https://doi.org/10.1021/acsanm.2c03916Test
https://lutpub.lut.fi/handle/10024/165113Test

المؤلفون: Lasek, Kinga, Li, Jingfeng, Ghorbani-Asl, Mahdi, Khatun, Salma, Alanwoko, Onyedikachi, Pathirage, Vimukthi, Krasheninnikov, Arkady V., Batzill, Matthias

المساهمون: University of South Florida, Helmholtz-Zentrum Dresden-Rossendorf EV, Department of Applied Physics, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: 2D materials, metal-semiconductor junction, phase change, platinum telluride

العلاقة: Nano Letters; Lasek , K , Li , J , Ghorbani-Asl , M , Khatun , S , Alanwoko , O , Pathirage , V , Krasheninnikov , A V & Batzill , M 2022 , ' Formation of In-Plane Semiconductor-Metal Contacts in 2D Platinum Telluride by Converting PtTe 2 to Pt 2 Te 2 ' , Nano Letters , vol. 22 , no. 23 , pp. 9571-9577 . https://doi.org/10.1021/acs.nanolett.2c03715Test; PURE UUID: 8af0c246-030d-4397-afc7-276e9383b10c; PURE ITEMURL: https://research.aalto.fi/en/publications/8af0c246-030d-4397-afc7-276e9383b10cTest; PURE LINK: http://www.scopus.com/inward/record.url?scp=85142642008&partnerID=8YFLogxKTest; PURE LINK: https://www.hzdr.de/publications/Publ-35498Test; https://aaltodoc.aalto.fi/handle/123456789/118518Test; URN:NBN:fi:aalto-202212227256

الإتاحة: https://doi.org/10.1021/acs.nanolett.2c03715Test
https://aaltodoc.aalto.fi/handle/123456789/118518Test

المؤلفون: Samira Shamsir, Laila Parvin Poly, Rajat Subhra Chakraborty, Samia Subrina

مصطلحات موضوعية: Graphene Properties, Synthesis, and Applications, Materials Chemistry, Materials Science, Physical Sciences, Carbon Nanotubes and their Applications, Nanowire Nanosensors for Biomedical and Energy Applications, Biomedical Engineering, FOS Medical engineering, Engineering, Nanoribbons, Schottky diode, Diode, Materials science, Graphene, Schottky barrier, Optoelectronics, Metal–semiconductor junction, Voltage, Condensed matter physics, Electric field, Charge density, Charge physics, Backward diode, Physics, Nanotechnology, FOS Nanotechnology, Quantum mechanics

العلاقة: https://dx.doi.org/10.60692/050ah-zz588Test

الإتاحة: https://doi.org/10.60692/h2s0n-agq7210.60692/050ah-zz588Test

المؤلفون: Yi Zhao, Deyin Zhao, Zhenzhen Ma, Gong Li, Dan Zhao, Xin Li

المصدر: Coatings; Volume 11; Issue 11; Pages: 1310

مصطلحات موضوعية: gas sensor, graphene oxide, GO-Si based metal-semiconductor junction resistor, UVO, reduced graphene oxide, ammonia

وصف الملف: application/pdf

العلاقة: Thin Films; https://dx.doi.org/10.3390/coatings11111310Test

الإتاحة: https://doi.org/10.3390/coatings11111310Test

المؤلفون: Avtandil Tavkhelidze, Larissa Jangidze, Zaza Taliashvili, Nima E. Gorji

المصدر: Coatings; Volume 11; Issue 8; Pages: 945

مصطلحات موضوعية: nanograting, G-doping, metal-semiconductor junction, reverse current

وصف الملف: application/pdf

العلاقة: Thin Films; https://dx.doi.org/10.3390/coatings11080945Test

الإتاحة: https://doi.org/10.3390/coatings11080945Test

المؤلفون: Riya Nag, Rama Kanta Layek, Abhijit Bera

المساهمون: Lappeenrannan-Lahden teknillinen yliopisto LUT, Lappeenranta-Lahti University of Technology LUT, fi=School of Engineering Science|en=School of Engineering Science

المصدر: ACS Applied Nano Materials. 5:17939-17948

مصطلحات موضوعية: MXene nanosheets, Fermi-level pinning, scanning tunneling spectroscopy, General Materials Science, transparent electrode, metal−semiconductor junction, layer-by-layer self-assembly

وصف الملف: fulltext

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b1896f7853a6fbe3d7ddf1539ab685dTest
https://doi.org/10.1021/acsanm.2c03916Test

المؤلفون: Abdulkhaev, Oybek Abdullazizovich, Yakubov, Anvar A’zamovich, Giyasova, Feruza Abdiazizovna, Khakimov, Alim Adilovich

المصدر: Euroasian Journal of Semiconductors Science and Engineering

مصطلحات موضوعية: multi-barrier photodiode, semi-insulating GaAs, photosensitivity, photoemission, barrier height, p-n-junction, metal-semiconductor junction, breakdown mechanism, activation energy

وصف الملف: application/pdf

العلاقة: https://uzjournals.edu.uz/semiconductors/vol1/iss4/5Test; https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1066&context=semiconductorsTest

الإتاحة: https://uzjournals.edu.uz/semiconductors/vol1/iss4/5Test
https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1066&context=semiconductorsTest

المؤلفون: Kinga Lasek, Jingfeng Li, Mahdi Ghorbani-Asl, Salma Khatun, Onyedikachi Alanwoko, Vimukthi Pathirage, Arkady V. Krasheninnikov, Matthias Batzill

المساهمون: University of South Florida, Helmholtz-Zentrum Dresden-Rossendorf, Department of Applied Physics, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: phase change, Mechanical Engineering, platinum telluride, General Materials Science, Bioengineering, metal-semiconductor junction, General Chemistry, Condensed Matter Physics, 2D materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c09f004e03770c8f4b08c62eda764e31Test
https://aaltodoc.aalto.fi/handle/123456789/118518Test

المؤلفون: Xin Li, Dan Zhao, Gong Li, Yi Zhao, Zhenzhen Ma, Deyin Zhao

المصدر: Coatings, Vol 11, Iss 1310, p 1310 (2021)
Coatings
Volume 11
Issue 11

مصطلحات موضوعية: UVO, Materials science, GO-Si based metal-semiconductor junction resistor, Oxide, Chemical vapor deposition, Metal–semiconductor junction, medicine.disease_cause, reduced graphene oxide, ammonia, law.invention, gas sensor, chemistry.chemical_compound, law, Materials Chemistry, medicine, Detection limit, Graphene, business.industry, Surfaces and Interfaces, Engineering (General). Civil engineering (General), Surfaces, Coatings and Films, chemistry, Optoelectronics, graphene oxide, Resistor, TA1-2040, business, Ultraviolet, Voltage

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad1b394860196a2b43b0987c4df414eTest
https://www.mdpi.com/2079-6412/11/11/1310Test