-
1
المصدر: IEEE Journal of the Electron Devices Society NanoLund: Centre for Nanoscience. 6:408-412
مصطلحات موضوعية: Electron traps, FinFETs., high-κ, Hysteresis, hysteresis, III-V, InGaAs, inter face trap, Logic gates, Mathematical model, MOSFET, MOSFETs, Multi-gate, Surface fitting, Surface treatment, trap density, Teknik, Elektroteknik och elektronik, Annan elektroteknik och elektronik, Engineering and Technology, Electrical Engineering, Electronic Engineering, Information Engineering, Other Electrical Engineering
الوصول الحر: https://lup.lub.lu.se/record/5f2f837d-3a8c-406f-a1e4-8e37b75d5c28Test
http://dx.doi.org/10.1109/JEDS.2018.2806487Test -
2تقرير
المؤلفون: Kanazawa, Toru, Amemiya, Tomohiro, Ishikawa, Atsushi, Upadhyaya, Vikrant, Tsuruta, Kenji, Tanaka, Takuo, Miyamoto, Yasuyuki
المصدر: Scientific Reports, 6, 22277 (2016)
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
الوصول الحر: http://arxiv.org/abs/1505.07970Test
-
3دورية أكاديمية
المؤلفون: Miyamoto, Yasuyuki, Honjyo, Makoto, Fukuda, Koichi
المصدر: Japanese Journal of Applied Physics ; volume 63, issue 3, page 03SP63 ; ISSN 0021-4922 1347-4065
-
4دورية أكاديمية
المؤلفون: Fan, Jiawei, Xu, Ruifeng, Arai, Masakazu, Miyamoto, Yasuyuki
المصدر: Japanese Journal of Applied Physics ; volume 63, issue 3, page 03SP75 ; ISSN 0021-4922 1347-4065
-
5دورية أكاديمية
المؤلفون: Yamaguchi, Yutaro, Nakatani, Keigo, Shinjo, Shintaro, Oishi, Toshiyuki, Miyamoto, Yasuyuki
المصدر: IEEE Transactions on Microwave Theory and Techniques ; volume 72, issue 7, page 4006-4016 ; ISSN 0018-9480 1557-9670
الإتاحة: https://doi.org/10.1109/tmtt.2023.3332890Test
http://xplorestaging.ieee.org/ielx7/22/10581889/10328451.pdf?arnumber=10328451Test -
6
-
7مؤتمر
المساهمون: National Institute of Information and Communications Technology
المصدر: 2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
الإتاحة: https://doi.org/10.1109/rfit58767.2023.10243224Test
http://xplorestaging.ieee.org/ielx7/10243164/10243121/10243224.pdf?arnumber=10243224Test -
8
المؤلفون: MIYAMOTO, YASUYUKI, Gotow, Takahiro
المصدر: 電気学会論文誌C. 142(No. 3):348-353
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=jairo_______::0a26d9b5a0a82d683aeebc22814bbedcTest
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100875016Test -
9دورية أكاديمية
المؤلفون: Ito, Yoshikaze, Tamai, Seita, Hoshi, Takuya, Gotow, Takahiro, Miyamoto, Yasuyuki
المصدر: Japanese Journal of Applied Physics ; volume 62, issue SC, page SC1048 ; ISSN 0021-4922 1347-4065
-
10دورية أكاديمية
المؤلفون: Miyamoto, Yasuyuki, Makiyama, Kozo
المساهمون: New Energy and Industrial Technology Development Organization
المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 5, page 2210-2215 ; ISSN 0018-9383 1557-9646
الإتاحة: https://doi.org/10.1109/ted.2023.3253823Test
http://xplorestaging.ieee.org/ielx7/16/10106527/10070742.pdf?arnumber=10070742Test