نتائج البحث - "M. J. Prest"

1

دورية أكاديمية

LETTER TO THE EDITOR Dynamic threshold mode operation of p-channel Si and strained-SiGe

المؤلفون: Mosfets Between K, V Gaspari, K Fobelets, J E Velazquez-perez, M J Prest, T E Whall

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www3.imperial.ac.uk/pls/portallive/docs/1/32243701.PDFTest.

العلاقة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.629.9086Test; http://www3.imperial.ac.uk/pls/portallive/docs/1/32243701.PDFTest

الإتاحة: http://www3.imperial.ac.uk/pls/portallive/docs/1/32243701.PDFTest

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2

Optical response of strained- and unstrained-silicon cold-electron bolometers

المؤلفون: David R. Leadley, Evan H. C. Parker, Mika Prunnila, Peter S. Barry, Terry E. Whall, Philip Daniel Mauskopf, Peter A. R. Ade, Dmitry Morozov, M. J. Prest, Maksym Myronov, T. L. R. Brien, Rashmikant V. Sudiwala, C. Dunscombe

المصدر: Brien, T, Ade, P, Barry, P S, Dunscombe, C J, Leadley, D R, Morozov, D V, Myronov, M, Parker, E, Prest, M J, Prunnila, M, Sudiwala, R V, Whall, T E & Mauskopf, P D 2016, ' Optical response of strained-and unstrained-silicon cold-electron bolometers ', Journal of Low Temperature Physics, vol. 184, no. 1-2, pp. 231-237 . https://doi.org/10.1007/s10909-016-1569-xTest

مصطلحات موضوعية: Materials science, Physics - Instrumentation and Detectors, Silicon, Schottky barrier, photon noise, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Radiation, 01 natural sciences, law.invention, infrared detectors, Materials Science(all), law, 0103 physical sciences, General Materials Science, Noise-equivalent power, Instrumentation and Methods for Astrophysics (astro-ph.IM), QC, optical response, QB, 010302 applied physics, business.industry, Amplifier, Bolometer, Doping, cold electron bolometers, strained silicon, silicon, Strained silicon, lens antennas, optical characterisation, Instrumentation and Detectors (physics.ins-det), 021001 nanoscience & nanotechnology, Condensed Matter Physics, measure noise, Atomic and Molecular Physics, and Optics, chemistry, doped silicon, silicon absorbers, slot antennas, Optoelectronics, noise equivalent power, 0210 nano-technology, business, Astrophysics - Instrumentation and Methods for Astrophysics

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f18977b429e8dcdba7eae3081534feeTest
https://doi.org/10.1007/s10909-016-1569-xTest

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

المؤلفون: David R. Leadley, J. S. Richardson-Bullock, Maksym Myronov, M. J. Prest, Richard J. H. Morris, A. Dobbie, David Gunnarsson, Evan H. C. Parker, Vishal Shah, Mika Prunnila, Terry E. Whall

المصدر: Richardson-Bullock, J S, Prest, M J, Shah, V A, Gunnarsson, D, Prunnila, M, Dobbie, A, Myronov, M, Morris, R J H, Whall, T E, Parker, E H C & Leadley, D R 2015, ' Comparison of electron-phonon and hole-phonon energy loss rates in silicon ', Solid-State Electronics, vol. 103, pp. 40-43 . https://doi.org/10.1016Test/j.sse.2014.09.002

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a40ca3ef94cb1e6c11c385468ecb7126Test
https://doi.org/10.1016Test/j.sse.2014.09.002

4

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

المؤلفون: Evan H. C. Parker, Terry E. Whall, Andrey Shchepetov, John E. Halpin, Mika Prunnila, David R. Leadley, Stephen Rhead, Vishal Shah, M. J. Prest, Maksym Myronov

المصدر: Shah, V A, Myronov, M, Rhead, S D, Halpin, J E, Shchepetov, A, Prest, M J, Prunnila, M, Whall, T E, Parker, E H C & Leadley, D R 2014, ' Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry ', Solid-State Electronics, vol. 98, no. August, pp. 93-98 . https://doi.org/10.1016Test/j.sse.2014.04.015

مصطلحات موضوعية: Ge, Fabrication, Materials science, Silicon, Germanium, Membrane, chemistry.chemical_element, Nanotechnology, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, TMAH, chemistry, Materials Chemistry, Wafer, Electronics, Electrical and Electronic Engineering, Single crystal, KOH

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0794884ca6f2a9d2799f133d494dfb37Test
https://doi.org/10.1016Test/j.sse.2014.04.015

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Evaluation of the convection heat transfer coefficient in a thermoelectric distillation system

المؤلفون: Gao Min, M. J. Prest, Hayder Al-Madhhachi

مصطلحات موضوعية: Materials science, Thermoelectric cooling, Chemical engineering, Heat transfer, Heat spreader, Thermoelectric effect, Plate heat exchanger, Thermodynamics, Plate fin heat exchanger, Heat transfer coefficient, Physics::Atmospheric and Oceanic Physics, Shell and tube heat exchanger

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d264b6c1eb67f701b969d85e5513e8Test

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Novel hybrid III:V concentrator photovoltaic-thermoelectric receiver designs

المؤلفون: Matthew Rolley, Tracy K. N. Sweet, M. J. Prest, Gao Min

المصدر: AIP Conference Proceedings.

مصطلحات موضوعية: Engineering, Maximum power principle, business.industry, Irradiance, Active surface, Concentrator, law.invention, Optics, law, Thermoelectric effect, Solar cell, Electric power, business, Short circuit

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b7e4fcfcae15f51d6a366b406ed0f755Test
https://doi.org/10.1063/1.5001447Test

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Electrical Isolation of Dislocations in Ge Layers on Si(001) Substrates through CMOS Compatible Suspended Structures

المؤلفون: James Richardson-Bullock, M. J. Prest, Evan H. C. Parker, Maksym Myronov, David R. Leadley, Terry E. Whall, Chalermwat Wongwanitwatana, Vishal Shah

المصدر: ECS Transactions. 50:737-746

مصطلحات موضوعية: Resistive touchscreen, Semiconductor, Materials science, business.industry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, Substrate (electronics), Dislocation, Epitaxy, business, Layer (electronics), Order of magnitude

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::6194e77f93115383ce738ef0f4ee0cb9Test
https://doi.org/10.1149/05009.0737ecstTest

8

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

المؤلفون: Mika Prunnila, M. J. Prest, Dmitry Morozov, E. H. C. Parked, C. Dunscombe, Peter A. R. Ade, Maksym Myronov, Peter S. Barry, Philip Daniel Mauskopf, R. V. Sudiwala, T. L. R. Brien, David R. Leadley, Terry E. Whall

المصدر: Brien, T L R, Ade, P A R, Barry, P S, Dunscombe, C J, Leadley, D R, Morozov, D V, Myronov, M, Parked, E H C, Prest, M J, Prunnila, M, Sudiwala, R V, Whall, T E & Mauskopf, P D 2016, Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz . in Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China ., 7460630, IEEE Institute of Electrical and Electronic Engineers, pp. 1-4, UK, Europe, China Millimeter Waves and THz Technology Workshop, Cardiff, United Kingdom, 14/09/15 . https://doi.org/10.1109/UCMMT.2015.7460630Test

مصطلحات موضوعية: Physics, Silicon, business.industry, Amplifier, Bolometer, Detector, electrons, strained silicon, chemistry.chemical_element, Schottky diode, Strained silicon, millimeter waves, Noise (electronics), absorption cooling, law.invention, infrared detectors, Optics, chemistry, law, slot antennas, Optoelectronics, terahertz waves, business, Electron cooling

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81f818fee1c6f585de861cd6ddcbc471Test
https://cris.vtt.fi/en/publications/f60d2fb4-4198-4846-8673-74e368bdee79Test

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Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

المؤلفون: J.E. Velazquez-Perez, Kristel Fobelets, V. Gaspari, M J Prest, Terry E. Whall

المصدر: Semiconductor Science and Technology. 19:L95-L98

مصطلحات موضوعية: Materials science, business.industry, Transconductance, Heterojunction, Substrate (electronics), Atmospheric temperature range, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Threshold voltage, MOSFET, Materials Chemistry, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::9ae533ed0e43aabe1f2ef886bc5f8cb9Test
https://doi.org/10.1088/0268-1242/19/9/l01Test

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

المؤلفون: Evan H. C. Parker, M. J. Prest, John R. Barker, A.M. Waite, Alan G. R. Evans, O. A. Mironov, Asen Asenov, M.J. Palmer, Terry E. Whall, T.J. Grasby, Jeremy R. Watling, P. J. Phillips

المصدر: Materials Science and Engineering: B. 89:444-448

مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Mechanical Engineering, Transconductance, Semiconductor device, Condensed Matter Physics, Noise (electronics), Mechanics of Materials, Velocity overshoot, Optoelectronics, General Materials Science, business, Voltage

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::2c7cd4dc6c64832dfa4144d1d040f023Test
https://doi.org/10.1016/s0921-5107Test(01)00858-3

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