التفاصيل البيبلوغرافية
| العنوان: |
Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD |
| المؤلفون: |
Loku Singgappulige Rosantha Kumara (10973989), Kyohei Ishikawa (5706965), Keisuke Ide (7122242), Hideo Hosono (1261941), Toshio Kamiya (1261935), Osami Sakata (1455958) |
| سنة النشر: |
2021 |
| المجموعة: |
Smithsonian Institution: Digital Repository |
| مصطلحات موضوعية: |
Biophysics, Medicine, Pharmacology, Biotechnology, Geology, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, XAFS, RMC configuration models, M-O, a-IGZO TFTs, Local Structure Properties, XRD, UHV, atomic-scale structure, impurity hydrogen content, STD, oxygen flow rate ratio, HEXRD |
| الوصف: |
The strong effect of impurity hydrogen (H) on subgap electronic states in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) was confirmed using standard (STD) and ultrahigh-vacuum (UHV) sputtering systems with different base pressures of 10 –4 and 10 –7 Pa, respectively. However, comprehensive studies of the atomic-scale structure have yet to be reported. We investigated the correlations between the atomic-scale structure, the electronic state, and the impurity hydrogen content in a-IGZO by high-energy X-ray diffraction (HEXRD) coupled with reverse Monte Carlo (RMC) modeling and X-ray absorption fine structure (XAFS) spectroscopy. XAFS probed the distribution of unoccupied electronic states above the Fermi level and the local coordination structure around the In, Ga, and Zn atoms. A possible contribution for H from voids in the a-IGZO films was observed by the HEXRD and RMC configuration models. In contrast, the STD 3% film has many voids, which are occupied by impurity H. The proportion of lower coordinated M-O (M = Zn, Ga, In) structures is increased because of the H in voids. We revealed that this electronic and atomic-scale structure of the a-IGZO TFTs, which results in enhanced TFT characteristics, can be stabilized by the hydrogen-passivated defects resulting from STD sputtering with an optimum oxygen flow rate ratio of 3%. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| العلاقة: |
https://figshare.com/articles/journal_contribution/Local_Structure_Properties_of_Hydrogenated_and_Nonhydrogenated_Amorphous_In_Ga_Zn_O_Thin_Films_Using_XAFS_and_High-Energy_XRD/14785942Test |
| DOI: |
10.1021/acs.jpcc.1c02437.s001 |
| الإتاحة: |
https://doi.org/10.1021/acs.jpcc.1c02437.s001Test |
| حقوق: |
CC BY-NC 4.0 |
| رقم الانضمام: |
edsbas.C747B2B9 |
| قاعدة البيانات: |
BASE |
