المؤلفون: Rad, Zahra Jahanshah, Lehtiö, Juha-Pekka, Mack, Iris, Rosta, Kawa, Chen, Kexun, Vähänissi, Ville, Punkkinen, Marko P.J., Punkkinen, Risto, Hedman, Hannu-Pekka, Pavlov, Andrei, Kuzmin, Mikhail V., Savin, Hele, Laukkanen, Pekka J., Kokko, Kalevi

المساهمون: Department of Electronics and Nanoengineering, Hele Savin Group, University of Turku, Aalto-yliopisto, Aalto University

وصف الملف: 46933-46941; application/pdf

العلاقة: ACS Applied Materials and Interfaces; Volume 12, issue 41; Rad, Z J, Lehtiö, J-P, Mack, I, Rosta, K, Chen, K, Vähänissi, V, Punkkinen, M P J, Punkkinen, R, Hedman, H-P, Pavlov, A, Kuzmin, M V, Savin, H, Laukkanen, P J & Kokko, K 2020, ' Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 C ', ACS Applied Materials and Interfaces, vol. 12, no. 41, pp. 46933-46941 . https://doi.org/10.1021/acsami.0c12636Test; PURE UUID: 1505644a-4297-44ae-9beb-835add17d282; PURE ITEMURL: https://research.aalto.fi/en/publications/1505644a-4297-44ae-9beb-835add17d282Test; PURE LINK: http://www.scopus.com/inward/record.url?scp=85092944763&partnerID=8YFLogxKTest; PURE FILEURL: https://research.aalto.fi/files/51761114/Rad_Decreasing_interface_defect_densities_ACS.pdfTest; https://aaltodoc.aalto.fi/handle/123456789/47425Test; URN:NBN:fi:aalto-202011066317

الإتاحة: https://doi.org/10.1021/acsami.0c12636Test
https://aaltodoc.aalto.fi/handle/123456789/47425Test

المؤلفون: Tuominen, Marjukka, Mäkelä, Jaakko M., Yasir, Muhammad, Dahl, Johnny, Granroth, Sari, Lehtiö, Juha-Pekka, Félix, Roberto, Laukkanen, Pekka J., Kuzmin, Mikhail V., Laitinen, Mikko, Punkkinen, Marko P.J., Hedman, Hannu-Pekka, Punkkinen, Risto, Polojärvi, Ville V., Lyytikäinen, Jari, Tukiainen, Antti, Guina, Mircea D., Kokko, Kalevi

مصطلحات موضوعية: III-V semiconductor, InAs, synchrotron, photoelectron, hapetus, atomikerroskasvatus

وصف الملف: application/pdf; 44932-44940; fulltext

العلاقة: ACS Applied Materials and Interfaces; 51; 10; Tuominen, M., Mäkelä, J. M., Yasir, M., Dahl, J., Granroth, S., Lehtiö, J.-P., Félix, R., Laukkanen, P. J., Kuzmin, M. V., Laitinen, M., Punkkinen, M. P., Hedman, H.-P., Punkkinen, R., Polojärvi, V. V., Lyytikäinen, J., Tukiainen, A., Guina, M. D., & Kokko, K. (2018). Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing. ACS Applied Materials and Interfaces , 10 (51), 44932-44940. https://doi.org/10.1021/acsami.8b17843Test; CONVID_28778308; TUTKAID_79844; URN:NBN:fi:jyu-201812315338; http://urn.fi/URN:NBN:fi:jyu-201812315338Test

الإتاحة: http://urn.fi/URN:NBN:fi:jyu-201812315338Test

المؤلفون: Averyanov, Dmitry V., Karateeva, Christina G., Karateev, Igor A., Tokmachev, Andrey M., Kuzmin, Mikhail V., Laukkanen, Pekka, Vasiliev, Alexander L., Storchak, Vyacheslav G.

المساهمون: Russian Science Foundation, National Research Council Canada, Russian Foundation for Basic Research

المصدر: Materials & Design ; volume 116, page 616-621 ; ISSN 0264-1275

مصطلحات موضوعية: Mechanical Engineering, Mechanics of Materials, General Materials Science

الإتاحة: https://doi.org/10.1016/j.matdes.2016.12.055Test
https://api.elsevier.com/content/article/PII:S0264127516315817?httpAccept=text/xmlTest
https://api.elsevier.com/content/article/PII:S0264127516315817?httpAccept=text/plainTest

المؤلفون: Bagratashvili, Victor N., Kuzmin, Mikhail V., Osmanov, Rustem R., Putilin, Felix N., Vereshchagina, Ludmila N.

المصدر: Chemical Physics Letters ; volume 120, issue 2, page 211-216 ; ISSN 0009-2614

مصطلحات موضوعية: Physical and Theoretical Chemistry, General Physics and Astronomy

الإتاحة: https://doi.org/10.1016/0009-2614Test(85)87042-1
https://api.elsevier.com/content/article/PII:0009261485870421?httpAccept=text/xmlTest
https://api.elsevier.com/content/article/PII:0009261485870421?httpAccept=text/plainTest