نتائج البحث - "Kouvetakis, John"

1

تقرير

A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics

المؤلفون: Mircovich, Matthew A., Kouvetakis, John, Menéndez, José

مصطلحات موضوعية: Condensed Matter - Materials Science

الوصول الحر: http://arxiv.org/abs/2311.00198Test

View record in Arxiv

2

تقرير

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

المؤلفون: Menéndez, José, Xu, Chi, Kouvetakis, John

مصطلحات موضوعية: Condensed Matter - Materials Science

الوصول الحر: http://arxiv.org/abs/2304.04815Test

View record in Arxiv

3

دورية أكاديمية

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics.

المؤلفون: Mircovich, Matthew A.¹ (AUTHOR), Kouvetakis, John² (AUTHOR), Menéndez, José¹ (AUTHOR) jose.menendez@asu.edu

المصدر: Journal of Applied Physics. 3/28/2024, Vol. 135 Issue 12, p1-16. 16p.

مصطلحات موضوعية: *DIODES, *PIN diodes

4

تقرير

Mid-infrared (3-8 {\mu}m) $\text{Ge}_{1-y}\text{Sn}_y$ alloys (0.15 < $y$ < 0.30): synthesis, structural, and optical properties

المؤلفون: Xu, Chi, Wallace, Patrick M., Ringwala, Dhruve A., Chang, Shery L. Y., Poweleit, Christian D., Kouvetakis, John, Menéndez, José

المصدر: Appl. Phys. Lett. 114, 212104 (2019)

مصطلحات موضوعية: Condensed Matter - Materials Science

الوصول الحر: http://arxiv.org/abs/1904.07201Test

View record in Arxiv

5

دورية أكاديمية

Extended Compositional Range for the Synthesis of SWIR and LWIR Ge 1–y Sn y Alloys and Device Structures via CVD of SnH 4 and Ge 3 H 8

المؤلفون: Mircovich, Matthew A., Xu, Chi, Ringwala, Dhruve A., Poweleit, Christian D., Menéndez, José, Kouvetakis, John

المساهمون: Air Force Office of Scientific Research, DARPA STTR through Freedom Phototnics LLC

المصدر: ACS Applied Electronic Materials ; volume 3, issue 8, page 3451-3460 ; ISSN 2637-6113 2637-6113

الإتاحة: https://doi.org/10.1021/acsaelm.1c00424Test

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6

دورية أكاديمية

Radiation-induced Electron and Hole Traps in Ge 1-x Sn x (x = 0-0.094)

المؤلفون: Hogsed, Michael R., Choe, Kevin, Miguel, Norman, Wang, Buguo, Kouvetakis, John

المصدر: Faculty Publications

مصطلحات موضوعية: Annealing, Crystallographic defects, Deep level transient pectroscopy, Electron traps, Photodetectors, Atomic, Molecular and Optical Physics

وصف الملف: application/pdf

العلاقة: https://scholar.afit.edu/facpub/704Test; https://scholar.afit.edu/context/facpub/article/1718/viewcontent/1.5131783.pdfTest

الإتاحة: https://doi.org/10.1063/1.5131783Test
https://scholar.afit.edu/facpub/704Test
https://scholar.afit.edu/context/facpub/article/1718/viewcontent/1.5131783.pdfTest

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7

دورية أكاديمية

Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications.

المؤلفون: Kouvetakis, John, Wallace, Patrick M., Xu, Chi, Ringwala, Dhruve A., Mircovich, Matthew, Roldan, Manuel A., Webster, Preston T., Grant, Perry C., Menéndez, José

المصدر: ACS Applied Materials & Interfaces; 10/18/2023, Vol. 15 Issue 41, p48382-48394, 13p

8

دورية أكاديمية

Temperature-Dependent Photoluminescence Studies of Ge 1−y Sn y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

المؤلفون: Ryu, Mee-Yi, Harris, Thomas R., Wang, Buguo, Yeo, Yung Kee, Hogsed, Michael R., Lee, Sang Jo, Kim, Jong Su, Kouvetakis, John

المصدر: Faculty Publications

مصطلحات موضوعية: Germanium tin, Photoluminescence, Photoreflectance, chemical vapor deposition, Atomic, Molecular and Optical Physics, Semiconductor and Optical Materials

العلاقة: https://scholar.afit.edu/facpub/638Test; https://rdcu.be/b5vuDTest

الإتاحة: https://doi.org/10.3938/jkps.75.577Test
https://scholar.afit.edu/facpub/638Test
https://rdcu.be/b5vuDTest

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9

دورية

Synthesis of High Sn Content Ge1–x–ySixSny(0.1 < y< 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

المؤلفون: Kouvetakis, John, Wallace, Patrick M., Xu, Chi, Ringwala, Dhruve A., Mircovich, Matthew, Roldan, Manuel A., Webster, Preston T., Grant, Perry C., Menéndez, José

المصدر: ACS Applied Materials & Interfaces; October 2023, Vol. 15 Issue: 41 p48382-48394, 13p

10

دورية أكاديمية

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

المؤلفون: Wang, Buguo, Fang, Z.-Q., Claflin, Bruce, Look, David, Kouvetakis, John, Yeo, Yung Kee

المساهمون: Air Force Office of Scientific Research

المصدر: Thin Solid Films ; volume 654, page 77-84 ; ISSN 0040-6090

مصطلحات موضوعية: Materials Chemistry, Metals and Alloys, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials

الإتاحة: https://doi.org/10.1016/j.tsf.2018.03.071Test
https://api.elsevier.com/content/article/PII:S0040609018302219?httpAccept=text/xmlTest
https://api.elsevier.com/content/article/PII:S0040609018302219?httpAccept=text/plainTest

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